Package structure for silicon-based module and package method for silicon-based module
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIANGYIN CHANGDIAN ADVANCED PACKAGING CO LTD
- Publication Date
- 2016-01-06
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Abstract
Description
technical field
[0001] The invention relates to a packaging structure of a silicon-based module and a packaging method thereof, belonging to the technical field of semiconductor packaging. Background technique
[0002] With the continuous development of the electronics industry, more and more devices are integrated on the printed circuit board PCB, so the miniaturization of a single device has become an inevitable trend in the development of device packaging technology.
[0003] Among them, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a field effect transistor that uses an electric field effect to control a semiconductor. MOSFETs have received increasing attention in recent years due to their characteristic of enabling low power consumption voltage control. The source (Source) and gate (Gate) of the MOSFET chip are located on the front side of the chip, and its drain (Drain) is usually set on the back side of the chip.
[0004] The packaging requirements...