Package structure for silicon-based module and package method for silicon-based module

Abstract

The invention relates to a package structure for a silicon-based module and a package method for the silicon-based module, and belongs to the technical field of semiconductor packaging. The package structure comprises a silicon-based body, a silicon-based chip and a metal core solder ball, wherein the front surface of the silicon-based chip is covered with a patterned passivation layer and is provided with an passivation layer opening for exposing the upper surface of an electrode; a nickel / gold layer and a solder ball are arranged in the passivation layer opening; the metal core solder ball is arranged at the side of the silicon-based chip; the upper surface of the silicon-based body is selectively provided with a rewiring metal layer; the metal core solder ball is fixedly connected with the rewiring metal layer; the silicon-based chip and the rewiring metal layer are positively arranged and fixedly connected, and achieve electrical connection; and the top height of the solder ball and the top height of the metal core solder ball are located on the same plane. The package structure for the silicon-based module provided by the invention is simple; various performance indexes are ensured; and meanwhile, the process difficulty of the package method is lowered.

Description

technical field [0001] The invention relates to a packaging structure of a silicon-based module and a packaging method thereof, belonging to the technical field of semiconductor packaging. Background technique [0002] With the continuous development of the electronics industry, more and more devices are integrated on the printed circuit board PCB, so the miniaturization of a single device has become an inevitable trend in the development of device packaging technology. [0003] Among them, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a field effect transistor that uses an electric field effect to control a semiconductor. MOSFETs have received increasing attention in recent years due to their characteristic of enabling low power consumption voltage control. The source (Source) and gate (Gate) of the MOSFET chip are located on the front side of the chip, and its drain (Drain) is usually set on the back side of the chip. [0004] The packaging requirements...

AI Technical Summary

Problems solved by technology

The usual packaging method is to directly connect the drain to the lead frame or the substrate, and the source and the gate are indirectly connected to the lead frame or the substrate through a thick metal lead or a wide aluminum tape. The packaging structure of the package is often large, and only one side of the heat dissipation can be realized, and the current carrying capacity is often reduced because the heat dissipation cannot meet the demand

Of course, there are also a few products that are packaged with a clip package structure, which can realize double-sided heat dissipation, but the package structure is complicated, the package yield is low, and the production cost is high.

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