Preparation method for solar battery emitting electrode
A technology of solar cells and emitters, applied in the field of solar cells, can solve the problems of increasing production costs, not being suitable for mass production, and reducing battery efficiency, so as to achieve the effects of increasing production costs, improving short-wave spectral response, and improving battery efficiency
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preparation example Construction
[0018] The invention provides a method for preparing a solar cell emitter, comprising: A) subjecting a silicon wafer to texturing, diffusion and etching treatments to obtain a pretreated silicon wafer; B) oxidizing the pretreated silicon wafer with ozone, An oxide layer is formed on the surface, and then the oxide layer is removed by a hydrofluoric acid solution to obtain a solar cell emitter.
[0019] Among them, the present invention has no special limitation on the sources of all raw materials, which can be commercially available.
[0020] The silicon wafer is subjected to texturing, diffusion and etching treatment to obtain a pretreated silicon wafer. The methods of texturing, diffusion and etching are all methods well known in the art, and there is no special limitation.
[0021] The said texturing is the acid texturing familiarized by those skilled in the art. In the present invention, a mixed acid solution of nitric acid, hydrofluoric acid and water is preferably used...
Embodiment 1
[0030] 1.1 A 156mm×156mm P-type polysilicon wafer is used for pre-texturing, diffusion, and etching processes to obtain pretreated silicon wafers.
[0031] 1.2 Form an oxide layer on the surface of the pretreated silicon wafer by direct oxidation with ozone at room temperature, and the thickness of the formed oxide layer is 1nm.
[0032] 1.3 Use hydrofluoric acid solution to remove the oxide layer, the mass concentration of the hydrofluoric acid solution is 5%, and the time is 3 minutes.
[0033] 1.4 Perform processes such as anti-reflection coating on the front, screen printing, sintering and other processes to complete the production of solar cells.
[0034] The conversion efficiency of the solar cell prepared in Example 1 is increased by 0.02% compared with the conventional process solar cell (no ozone oxidation removal process).
Embodiment 2
[0036] 2.1 A P-type polysilicon wafer of 156mm×156mm is used, and the pre-texturing, diffusion, and etching processes are carried out to obtain a pretreated silicon wafer.
[0037] 2.2 At room temperature, an oxide layer is formed on the surface of the pretreated silicon wafer by high-voltage ionization of ozone, and the thickness of the formed oxide layer is 1.5 nm.
[0038] 2.3 Use hydrofluoric acid solution to remove the oxide layer, the mass concentration of the hydrofluoric acid solution is 5%, and the time is 3 minutes.
[0039] 2.4 Carry out processes such as anti-reflection coating on the front, screen printing, sintering, etc., to complete the production of solar cells.
[0040] The conversion efficiency of the solar cell prepared in Example 2 is increased by 0.02-0.03% compared with the conventional process solar cell (no ozone oxidation removal process).
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