One-dimensional diamond reinforced aluminum matrix composite material and preparing method thereof
An aluminum-matrix composite material and diamond-reinforced technology, which is applied to the one-dimensional diamond-reinforced aluminum-matrix composite material. Combination of problems such as looseness and complex preparation process achieves the effects of corrosion-resistant machining, good directional thermal conductivity, and high thermal conductivity
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Embodiment 1
[0055] Tungsten wires with diameters of 0.03mm and 0.4mm were respectively selected as the core material. First, the surface of the core material was pre-treated according to step (1); and then the diamond film was deposited by hot wire CVD according to step (2). The deposition process parameters: hot wire The distance is 6mm, the substrate temperature is 800°C, the temperature of the hot wire is 2200°C, the deposition pressure is 3KPa, the deposition time is 40 hours, the CH4 / H2 volume flow ratio is 1:99, and the thickness of the diamond film is 60 μm, that is, the cored diamond wire is obtained; (3) Sputter a layer of metal tungsten film on the surface of the cored diamond wire by magnetron sputtering method, the sputtering power is 150W, the pressure is 0.4Pa, the substrate temperature is 400°C, the argon flow rate is 20sccm, and the W film thickness is 0.2μm; then sputtering Sputtering a layer of metal copper film, the sputtering power is 100W, the pressure is 0.5Pa, the su...
Embodiment 2
[0057]Choose copper wire with a diameter of 0.3 μm and titanium wire with a diameter of 0.3 μm as the core material, firstly carry out pre-treatment on the surface of the core material according to step (1); then follow step (2) to deposit diamond film by hot wire CVD, deposition process parameters: thermal The wire distance is 6mm, the substrate temperature is 850°C, the hot wire temperature is 2200°C, the deposition pressure is 3KPa, the deposition time is 50 hours, the CH4 / H2 volume flow ratio is 1:99, and the thickness of the diamond film is 100 μm, that is, the cored diamond wire is obtained; (3) A metal chromium film is formed on the surface of the cored diamond wire by vacuum evaporation, the evaporation current is 36A, the pressure is 0.1Pa, the substrate temperature is 400°C, the thickness of the chromium film is 0.5μm, and then a layer of metal copper film is vacuum evaporated, and the evaporation current is 30A , the pressure is 0.1Pa, the substrate temperature is 30...
Embodiment 3
[0059] Select 0.1mm diameter fine molybdenum wire and 0.8mm thick molybdenum wire as the core material respectively, first pre-treat the surface of the core material according to step (1); then follow step (2) to deposit diamond film by hot wire CVD, deposition process parameters : The distance of the hot wire is 8mm, the temperature of the substrate is 900°C, the temperature of the hot wire is 2200°C, the deposition pressure is 3KPa, the deposition time is 50 hours, the volume flow ratio of CH4 / H2 is 2:98, and the thickness of the diamond film is 100 μm, that is, the cored diamond wire is obtained; (3) Using the magnetron sputtering method to sputter a layer of metal titanium film on the surface of the cored diamond wire, the sputtering power is 92W, the pressure is 0.5Pa, the substrate temperature is 300°C, the argon gas flow rate is 20sccm, and the film thickness is 500nm; ( 4) Orientate and evenly arrange the Ti-coated cored diamond wires in the mold with an arrangement dis...
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