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One-dimensional diamond reinforced aluminum matrix composite material and preparing method thereof

An aluminum-matrix composite material and diamond-reinforced technology, which is applied to the one-dimensional diamond-reinforced aluminum-matrix composite material. Combination of problems such as looseness and complex preparation process achieves the effects of corrosion-resistant machining, good directional thermal conductivity, and high thermal conductivity

Active Publication Date: 2016-01-13
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As far as diamond / aluminum composite materials are concerned, Johnson et al. in the United States successfully obtained diamond / aluminum composite materials by using the pressureless infiltration diamond particle skeleton, and the thermal conductivity of the prepared composite material is 259W / (m K); Natishan et al. The metallurgical method is applied to the preparation of diamond / aluminum composite materials, hoping to optimize the composite materials, but the effect is not obvious
In 2004, O. Beffort and others used the traditional pressure infiltration method to prepare diamond particle reinforced aluminum matrix composites, but the thermal conductivity of the composites was only 130W / (m K)
As for the diamond / copper composite material, in 1995, Sun Microsystems of the United States and Lawrence Livermore National Laboratory jointly developed a diamond particle / copper composite material, which is used as a substrate for a multi-chip module, with a thermal conductivity of 420W / (m K) , the CTE at 25~200℃ is (5.48~6.5)×10 -6 K -1 , which matches the CTE of GaAs, but the preparation process is relatively complicated and the cost is high
[0005] Theoretically, the thermal conductivity of the diamond / metal matrix composite should be between the diamond and the metal matrix, which will greatly improve the thermal conductivity of the composite; but in practice, the thermal conductivity of diamond / aluminum is often less than 300W / (m· K), while the thermal conductivity of diamond / copper composites is often less than 400W / (m K)
The copper-based diamond composite material prepared by this method has good directional thermal conductivity, but due to the extremely poor wettability between the diamond rod and the base metal, the two-phase interface is not tightly combined, and the interface between the diamond rod and the base metal A large thermal resistance is formed at the place, and its thermal conductivity needs to be further optimized

Method used

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Embodiment 1

[0055] Tungsten wires with diameters of 0.03mm and 0.4mm were respectively selected as the core material. First, the surface of the core material was pre-treated according to step (1); and then the diamond film was deposited by hot wire CVD according to step (2). The deposition process parameters: hot wire The distance is 6mm, the substrate temperature is 800°C, the temperature of the hot wire is 2200°C, the deposition pressure is 3KPa, the deposition time is 40 hours, the CH4 / H2 volume flow ratio is 1:99, and the thickness of the diamond film is 60 μm, that is, the cored diamond wire is obtained; (3) Sputter a layer of metal tungsten film on the surface of the cored diamond wire by magnetron sputtering method, the sputtering power is 150W, the pressure is 0.4Pa, the substrate temperature is 400°C, the argon flow rate is 20sccm, and the W film thickness is 0.2μm; then sputtering Sputtering a layer of metal copper film, the sputtering power is 100W, the pressure is 0.5Pa, the su...

Embodiment 2

[0057]Choose copper wire with a diameter of 0.3 μm and titanium wire with a diameter of 0.3 μm as the core material, firstly carry out pre-treatment on the surface of the core material according to step (1); then follow step (2) to deposit diamond film by hot wire CVD, deposition process parameters: thermal The wire distance is 6mm, the substrate temperature is 850°C, the hot wire temperature is 2200°C, the deposition pressure is 3KPa, the deposition time is 50 hours, the CH4 / H2 volume flow ratio is 1:99, and the thickness of the diamond film is 100 μm, that is, the cored diamond wire is obtained; (3) A metal chromium film is formed on the surface of the cored diamond wire by vacuum evaporation, the evaporation current is 36A, the pressure is 0.1Pa, the substrate temperature is 400°C, the thickness of the chromium film is 0.5μm, and then a layer of metal copper film is vacuum evaporated, and the evaporation current is 30A , the pressure is 0.1Pa, the substrate temperature is 30...

Embodiment 3

[0059] Select 0.1mm diameter fine molybdenum wire and 0.8mm thick molybdenum wire as the core material respectively, first pre-treat the surface of the core material according to step (1); then follow step (2) to deposit diamond film by hot wire CVD, deposition process parameters : The distance of the hot wire is 8mm, the temperature of the substrate is 900°C, the temperature of the hot wire is 2200°C, the deposition pressure is 3KPa, the deposition time is 50 hours, the volume flow ratio of CH4 / H2 is 2:98, and the thickness of the diamond film is 100 μm, that is, the cored diamond wire is obtained; (3) Using the magnetron sputtering method to sputter a layer of metal titanium film on the surface of the cored diamond wire, the sputtering power is 92W, the pressure is 0.5Pa, the substrate temperature is 300°C, the argon gas flow rate is 20sccm, and the film thickness is 500nm; ( 4) Orientate and evenly arrange the Ti-coated cored diamond wires in the mold with an arrangement dis...

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Abstract

The invention discloses a one-dimensional-diamond-reinforced aluminum matrix composite material and a preparing method. The composite material is characterized in that a diamond array composed of a plurality of one-dimensional diamond wires is distributed in an aluminum matrix, and the one-dimensional diamond wires are surface-modified diamond wires and are combined with the aluminum matrix in a metallurgical manner. The preparing method of the composite material includes the steps that after the surface-modified diamond wires are distributed in an array manner, the aluminum matrix or the aluminum matrix containing surface-modified diamond particles is compounded with the diamond wire array through one of a casting technology, an infiltration technology, a cold pressing sintering technology, a hot pressing sintering technology and a plasma sintering technology, and the one-dimensional-diamond-reinforced aluminum matrix composite material in which the one-dimensional diamond wires are combined with the aluminum matrix in the metallurgical manner is obtained. According to the one-dimensional-diamond-reinforced aluminum matrix composite material and the preparing method, the one-dimensional diamond wires are distributed in the aluminum matrix in the array manner, a series-parallel connection composite heat conduction structure is formed by adding the diamond particles, the heat conducting efficiency is further improved, the composite material can be used as an electronic packaging material, a heat sink material and the like, and packaging of high-temperature, high-frequency and high-power electronic devices is achieved.

Description

technical field [0001] The invention relates to a diamond composite material, in particular to a one-dimensional diamond-reinforced aluminum-based composite material, and also relates to a preparation method of the one-dimensional diamond-reinforced aluminum-based composite material. Background technique [0002] Electronic packaging is an operation process that rationally arranges, assembles, bonds, connects, and isolates the various components that constitute electronic devices or integrated circuits according to the specified requirements. It requires packaging materials to have high thermal conductivity and low thermal expansion coefficient. Good mechanical support, physical protection, electrical connection, heat dissipation and moisture resistance, external field shielding, size transition, and stable component parameters. With the rapid development of electronic information technology, electronic instruments are rapidly developing in the direction of high performance,...

Claims

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Application Information

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IPC IPC(8): C22C47/08C22C49/06C22C49/14C22C121/02
Inventor 马莉周科朝魏秋平余志明李志友
Owner CENT SOUTH UNIV
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