One-dimensional diamond reinforced aluminum matrix composite material and preparing method thereof
An aluminum-matrix composite material and diamond-reinforced technology, which is applied to the one-dimensional diamond-reinforced aluminum-matrix composite material. Combination of problems such as looseness and complex preparation process achieves the effects of corrosion-resistant machining, good directional thermal conductivity, and high thermal conductivity
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[0054] Example one:
[0055] Tungsten wires with diameters of 0.03mm and 0.4mm are selected as the core material respectively. First, perform pre-treatment on the surface of the core material according to step (1); then use hot wire CVD to deposit diamond film according to step (2). The deposition process parameters: hot wire The distance is 6mm, the substrate temperature is 800°C, the hot wire temperature is 2200°C, the deposition pressure is 3KPa, the deposition time is 40 hours, and the CH4 / H2 volume flow ratio is 1:99. The diamond film thickness is 60μm, and the core diamond wire is obtained; (3) Use magnetron sputtering method to sputter a metal tungsten film on the surface of cored diamond wire. Sputtering power is 150W, pressure is 0.4Pa, substrate temperature is 400℃, argon flow is 20sccm, and W film thickness is 0.2μm; Spray a layer of metallic copper film, with a sputtering power of 100W, a pressure of 0.5Pa, a substrate temperature of 300℃, an argon flow rate of 20sccm...
Example Embodiment
[0056] Embodiment two:
[0057] Choose 0.3μm copper wire and 0.3μm titanium wire as the core material respectively. First, perform the pretreatment on the surface of the core material according to step (1); then use hot wire CVD to deposit the diamond film according to step (2). The deposition process parameters: thermal The wire distance is 6mm, the substrate temperature is 850°C, the hot wire temperature is 2200°C, the deposition pressure is 3KPa, the deposition time is 50 hours, the CH4 / H2 volume flow ratio is 1:99, and the diamond film thickness is 100μm, and the core diamond wire is obtained; (3) A metal chromium film is deposited on the surface of the cored diamond wire by vacuum evaporation. The evaporation current is 36A, the pressure is 0.1Pa, the substrate temperature is 400℃, and the chromium film thickness is 0.5μm. Then a layer of metal copper film is vacuum evaporated, and the evaporation current is 30A. , The pressure is 0.1Pa, the substrate temperature is 300°C, a...
Example Embodiment
[0058] Embodiment three:
[0059] Choose a thin molybdenum wire with a diameter of 0.1mm and a thick molybdenum wire of 0.8mm as the core material. First, perform the pretreatment on the surface of the core material according to step (1); then use hot wire CVD to deposit the diamond film according to step (2). The deposition process parameters :Hot wire distance 8mm, substrate temperature 900°C, hot wire temperature 2200°C, deposition pressure 3KPa, deposition time 50 hours, CH4 / H2 volume flow ratio 2:98, get diamond film thickness 100μm, then get core diamond wire; (3) Use magnetron sputtering method to sputter a layer of metallic titanium film on the surface of cored diamond wire, sputtering power is 92W, pressure is 0.5Pa, substrate temperature is 300℃, argon flow is 20sccm, and film thickness is 500nm; 4) Arrange the Ti-plated core diamond wire uniformly in the mold in an orientation with a distance of 3mm to obtain a one-dimensional diamond array skeleton; (5) Fill the gap o...
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