A kind of phase-change memory unit and preparation method thereof
A phase-change storage and multi-layer electrode technology, applied in the field of microelectronics, can solve the problems of increasing the complexity of device preparation and the reliability of the device to be tested, and achieve the effects of easy production and mass production, low power consumption and simple process
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specific Embodiment 1
[0032] A phase change memory cell, such as figure 1 As shown, it includes a semiconductor substrate 1, on which a multilayer electrode 2 distributed horizontally is arranged, and a phase change memory film 3 and a dielectric layer 4 are sequentially embedded in the middle of the multilayer electrode 2 from bottom to top.
[0033] In this specific embodiment, the multilayer electrode 2 is composed of at least two different conductive material layers 5 arranged alternately up and down in order to form at least 10 layers of interface structure, similar to forming a superlattice structure, and the conductive materials are TiN, Ti, Al, W , Ag, Au, Cu, TiW, HfN, WN, TaN or AlN, the phase-change memory film 3 is a memory material Ge-Sb-Te system (or other materials with phase-change memory properties), and the material used for the dielectric layer 4 is Si 3 N 4 or SiO 2, the material used for the semiconductor substrate 4 is Si, SiC or SOI. The total thickness of the multilayer ...
specific Embodiment 2
[0034] A phase change memory cell, such as figure 1 As shown, a semiconductor substrate 1 is included, and a multilayer electrode 2 distributed horizontally is arranged on the semiconductor substrate 1, and a phase change memory film 3 and a dielectric layer 4 are sequentially embedded in the middle of the multilayer electrode 2 from bottom to top. The preparation method is as follows:
[0035] (1) Using magnetron sputtering or pulsed laser to deposit and grow horizontally distributed multilayer electrodes 2 on the semiconductor substrate 1;
[0036] (2) Divide the entire multilayer electrode 2 into two by using an exposure-etching process, and form cuboid grooves 6 with a spacing of 100-1000 nm in the middle;
[0037] (3) Using magnetron sputtering or pulsed laser to sequentially deposit and grow the phase change memory film 3 and the dielectric layer 4 in the groove 6;
[0038] (4) Using an exposure-etching process to remove part of the dielectric layer 4 above the multila...
specific Embodiment 3
[0040] A phase change memory cell, such as figure 1 As shown, a semiconductor substrate 1 is included, and a multilayer electrode 2 distributed horizontally is arranged on the semiconductor substrate 1, and a phase change memory film 3 and a dielectric layer 4 are sequentially embedded in the middle of the multilayer electrode 2 from bottom to top. The preparation method is as follows:
[0041] (1) Using magnetron sputtering or pulsed laser to sequentially deposit and grow the phase change memory film 3 and the dielectric layer 4 on the semiconductor substrate 1;
[0042] (2) Etching the phase-change memory thin film 3 and the dielectric layer 4 into strips by using an exposure-etching process, exposing the surface of the semiconductor substrate 1 on both sides;
[0043] (3) Using magnetron sputtering or pulsed laser to deposit and grow horizontally distributed multilayer electrodes 2 on the surface of the semiconductor substrate 1 exposed on both sides;
[0044] (4) Part of...
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