Microwave absorption material and preparation method thereof
A technology of microwave absorbing materials and resins, which is applied in chemical instruments and methods, and other chemical processes, can solve the problems of large dielectric loss, high dielectric constant, and poor bonding, and achieve the goal of solving processing difficulties and improving microwave-absorbing performance Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
preparation example Construction
[0022] The invention provides a kind of preparation method of microwave absorbing material, and this method comprises the following steps:
[0023] S1, soaking the sponge with a resin solution and drying to form a resin-containing carrier;
[0024] S2. Immerse the carrier containing the resin in the solution of the ferric salt with the reducing agent, and the reducing agent reacts with the ferric salt to load Fe on the carrier containing the resin 3 o 4 ;
[0025] S3, dissolving and removing the resin in the product obtained in step S2 with a solvent;
[0026] S4, soak the product obtained in step S3 in the solution of isopropyl titanate, and the isopropyl titanate decomposes the product loaded TiO obtained in step S3 2 ;
[0027] S5, sintering the product obtained in step S4 to remove the sponge to obtain a microwave absorbing material.
[0028] According to the preparation method provided by the present invention, preferably, the higher the porosity of the sponge materi...
Embodiment 1
[0045] Cut high-density nano-sponge (BASF, EF-320, porosity 80%) into rings with an inner diameter of 5mm, an outer diameter of 19mm and a thickness of 1mm as a reaction carrier; 250g PU-3548 (polyurethane resin) resin (shrinkage rate 0.45%) was dissolved in 50mL DMF (dimethylformamide) to prepare a 5g / mL solution, the reaction carrier was soaked in 5gPU-3548 resin solution for 1h, and dried at 80°C for later use.
[0046] The material manufacturing process is:
[0047] ①. Add 2.6gFeCl 3 , 0.5gNa 3 Dissolve Ct and 4g of sodium acetate (NaAc) in 40mL of ethylene glycol, add a piece of reaction carrier, and stir magnetically for 2h; put the mixture in a 100mL stainless steel autoclave (pressure 0.5MPa) for 10h at 200°C, cool to room temperature, Clean with absolute ethanol and dry at 80°C;
[0048] ②. Soak the product carrier obtained in step ① in DMF solution for 2 hours, clean it with absolute ethanol and dry it at 80 degrees Celsius;
[0049] ③. Add 2mL (about 1.92g) of i...
Embodiment 2
[0059] Cut high-density nano-sponge (BASF, EF-320, porosity 81%) into rings with an inner diameter of 5 mm, an outer diameter of 19 mm and a thickness of 1 mm as a reaction carrier; 100 g of polyvinyl alcohol (shrinkage rate of 0.6%) Dissolve it in 50mL of toluene, prepare a 2g / mL solution, soak the reaction carrier in the polyvinyl alcohol solution for 1 hour, and dry it at 80°C for later use.
[0060] The material manufacturing process is:
[0061] ①.Add 0.8g Fe(OH) 3 , 0.5gNa 3 Ct and 4g of sodium acetate (NaAc) were dissolved in 40mL of ethylene glycol, a piece of reaction carrier was added, and magnetically stirred for 2h; the mixture was placed in a 100mL stainless steel autoclave (pressure 0.8MPa) at 250°C for 8h, cooled to room temperature, Clean with absolute ethanol and dry at 80°C;
[0062] ②. Soak the product carrier obtained in step ① in toluene solution for 2 hours, clean it with absolute ethanol and dry it at 80 degrees Celsius;
[0063] ③.Add 0.42mL of isop...
PUM
Property | Measurement | Unit |
---|---|---|
pore size | aaaaa | aaaaa |
porosity | aaaaa | aaaaa |
shrinkage | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com