A preparation method of nanometer tungsten oxide electrochromic film

A nano-tungsten oxide and electrochromic technology, which is applied in the field of preparation of nano-tungsten oxide thin films, can solve the problems of inability to achieve fast response speed, low performance of electrochromic devices, and low film quality, etc. The effect of high achromatic contrast and fast preparation process

Active Publication Date: 2017-12-12
NANJING UNIV OF SCI & TECH
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

Chinese patent (200910059118.0) discloses a WO 3 Electrochromic thin film preparation method, the method adopts sol-gel method to prepare WO 3 Electrochromic film, but the quality of the film is not high, and the performance of the electrochromic device is low
Chinese patent (200910096737.7) discloses a magnetron sputtering method to prepare WO 3 Thin-film all-solid-state electrochromic devices, but the WO prepared by magnetron sputtering method 3 The film has high crystallinity, which is not conducive to the H + , Li + Injection and withdrawal, so that a faster response speed cannot be achieved

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  • A preparation method of nanometer tungsten oxide electrochromic film
  • A preparation method of nanometer tungsten oxide electrochromic film
  • A preparation method of nanometer tungsten oxide electrochromic film

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Embodiment 1

[0026] Combining liquid-phase laser ablation technology with electrophoretic deposition method to prepare nano-tungsten oxide film, first ablate the tungsten source target by liquid-phase laser to obtain a colloidal solution containing tungsten oxide nanoparticles; Depositing on a transparent conductive glass substrate to prepare a nano-tungsten oxide film specifically includes the following steps:

[0027] Step 1, add the prepared H concentration of 0.33% in the reaction vessel 2 o 2 solution, put a tungsten target with a purity of 99.99% in H 2 o 2 solution, and soak the solution over the surface of the target, and use a magnetic stirrer to stir the solution evenly.

[0028] Step 2. Adjust the optical path of the pulsed laser beam of the laser, so that the laser beam is focused on the target below the solvent liquid level, and a laser with a wavelength of 1064nm is selected to ablate the tungsten target. The laser working frequency is 10Hz, and the laser ablation energy i...

Embodiment 2

[0033] Combining liquid-phase laser ablation technology with electrophoretic deposition method to prepare nano-tungsten oxide film, first ablate the tungsten source target by liquid-phase laser to obtain a colloidal solution containing tungsten oxide nanoparticles; Depositing on a transparent conductive glass substrate to prepare a nano-tungsten oxide film specifically includes the following steps:

[0034] Step 1, add H in the reaction vessel 2 O solution, place a 99.99% pure tungsten target in H 2 O solution, and soak the solution over the surface of the target, and stir the solution evenly with a magnetic stirrer.

[0035] Step 2. Adjust the optical path of the pulsed laser beam of the laser, so that the laser beam is focused on the target below the solvent liquid level, and a laser with a wavelength of 532nm is selected to ablate the tungsten target. The laser working frequency is 5Hz, and the laser ablation energy is 100mJ , the ablation reaction was performed on the tu...

Embodiment 3

[0040] Combining liquid-phase laser ablation technology with electrophoretic deposition method to prepare nano-tungsten oxide film, first ablate the tungsten source target by liquid-phase laser to obtain a colloidal solution containing tungsten oxide nanoparticles; Depositing on a transparent conductive glass substrate to prepare a nano-tungsten oxide film specifically includes the following steps:

[0041] Step 1, add H in the reaction vessel 2 O and H 2 o 2 A mixed solution with a volume ratio of 100:1, put a tungsten oxide target with a purity of 99.99% in the above mixed solution, soak the solution on the surface of the target, and stir the solution evenly with a magnetic stirrer.

[0042] Step 2. Adjust the optical path of the pulsed laser beam of the laser, so that the laser beam is focused on the target below the solvent liquid level, and a laser with a wavelength of 1064nm is selected to ablate the tungsten target. The laser working frequency is 10Hz, and the laser a...

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Abstract

The invention discloses a method for preparing a nanometer tungsten oxide electrochromic film. The liquid phase laser ablation method is combined with the electrophoretic deposition method. Firstly, the liquid phase laser ablation technology is used to ablate the tungsten source by laser in the liquid phase environment. The target material is to obtain a colloid of highly active tungsten oxide nanoparticles; then, in the obtained colloid solution, the nano-tungsten oxide film is prepared on a transparent conductive glass substrate by electrophoretic deposition. The invention has the advantages of simple operation, rapid preparation process, mild reaction conditions and easy control, and the prepared nano-WO3 electrochromic film has fast response speed.

Description

technical field [0001] The invention relates to the technical field of semiconductor oxide material preparation, in particular to a method for preparing a nano-tungsten oxide thin film applicable to electrochromism, photochromism and intelligent display. Background technique [0002] Tungsten trioxide is an n-type wide bandgap semiconductor oxide (bandgap about 2.8 eV), WO at low temperature and room temperature 3 It exists in the form of monoclinic and triclinic phases, while orthogonal and tetragonal phases appear at high temperatures. Its ideal crystal structure can be regarded as a tungsten-oxygen octahedron composed of a central W atom and 6 O atoms surrounding the W atom [WO 6 ] are connected by common vertices, and there are many gaps between the octahedrons, forming various channels, which can be used for the flow channels and embedded positions of ions, which are H + , Li + Good injector for plasma. Therefore WO 3 With its excellent properties such as fast resp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/25
Inventor 邹友生窦康曾海波王沙龙董宇航
Owner NANJING UNIV OF SCI & TECH
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