Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method for polishing gallium arsenide wafer

A gallium arsenide and chip technology, which is applied in the field of gallium arsenide, can solve the problems of polishing liquid residue and cannot be removed, and achieve the effects of reducing residue, improving yield, and reducing polishing liquid residue

Active Publication Date: 2016-03-09
广东先导微电子科技有限公司
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The CMP process combines the advantages of chemical polishing and mechanical polishing. Using this process to polish GaAs wafers can greatly reduce the roughness of GaAs wafers. However, the gallium arsenide wafers polished by the existing CMP process are inspected under strong lights. There will be a large amount of polishing fluid remaining after cleaning, and it cannot be removed after cleaning

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for polishing gallium arsenide wafer
  • Method for polishing gallium arsenide wafer
  • Method for polishing gallium arsenide wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] 1) Structure and size of chemical mechanical polishing machine:

[0040] In this example, the chemical mechanical polisher used has figure 1 structure shown, figure 1 It is a schematic structural diagram of the chemical mechanical polishing machine provided by the embodiment of the present invention. The chemical mechanical polishing machine includes a workbench 6 carrying a polishing pad 5, a wafer holder 2 arranged above the polishing pad, and a polishing liquid supply device 4 for supplying polishing liquid to the polishing pad. The material of the polishing sheet 5 is polyurethane, the surface roughness of the polishing sheet 5 is≦0.4nm, and the hardness of the polishing sheet 5 is Asker39.C. The bottom surface of the wafer holder 2 is a disc with a diameter of 485 mm.

[0041] 2) Physical parameters of gallium arsenide wafer to be polished:

[0042] In this embodiment, the gallium arsenide wafer to be polished has a flatness≦5 μm, a surface roughness (Ra)≦2 nm,...

Embodiment 2

[0048] Adopt the chemical mechanical polishing machine used in embodiment 1 and gallium arsenide wafer to be polished, according to figure 2 In the manner shown, 25 above-mentioned gallium arsenide wafers to be polished are fixed on the bottom surface of the wafer holder of the above-mentioned chemical mechanical polishing machine.

[0049] After the polished gallium arsenide wafer is fixed, start the chemical mechanical polishing machine. Wherein, the wafer holder speed of chemical mechanical polishing machine is set to 30r / min; The worktable speed of chemical mechanical polishing machine is set to 30 / min; The pressure between the wafer holder and workbench of chemical mechanical polishing machine is set to 2000N; the liquid supply mode of the polishing liquid supply device is set as: at first according to the flow rate of 800mL / min transport sodium hypochlorite aqueous solution (sodium hypochlorite content is 0.55~0.66wt%) 30min, then according to the flow rate of 2200mL / mi...

Embodiment 3

[0052] Adopt the chemical mechanical polishing machine used in embodiment 1 and gallium arsenide wafer to be polished, according to figure 2 In the manner shown, 25 above-mentioned gallium arsenide wafers to be polished are fixed on the bottom surface of the wafer holder of the above-mentioned chemical mechanical polishing machine.

[0053] After the polished gallium arsenide wafer is fixed, start the chemical mechanical polishing machine. Wherein, the wafer holder speed of chemical mechanical polishing machine is set to 80r / min; The worktable speed of chemical mechanical polishing machine is set to 30r / min; The pressure between the wafer holder and workbench of chemical mechanical polishing machine is set to 1000N; the liquid supply mode of the polishing liquid supply device is set as: at first according to the flow rate of 1200mL / min, transport sodium hypochlorite aqueous solution (sodium hypochlorite content is 0.55~0.66wt%) 10min, then according to the flow rate of 1800mL...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Surface roughnessaaaaaaaaaa
Diameteraaaaaaaaaa
Surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of gallium arsenide, and particularly relates to a method for polishing a gallium arsenide wafer. The method comprises the steps that an oxidizing agent and a reduction agent are sequentially used for serving as polishing liquid to carry out chemical mechanical polishing on the gallium arsenide wafer to be polished, and the polished gallium arsenide wafer is obtained. According to the polishing method, the oxidizing polishing liquid is used in cooperation with reduction polishing liquid, residues of the polishing liquid on the surface of the gallium arsenide wafer is reduced, and the yield of the gallium arsenide wafer is improved. The experiment result shows that compared with purely-used oxidizing polishing liquid, the polishing method is adopted to polish the gallium arsenide wafer, and residues of the polishing liquid on the surface of the wafer can be effectively reduced.

Description

technical field [0001] The invention belongs to the field of gallium arsenide, in particular to a polishing method for a gallium arsenide wafer. Background technique [0002] Gallium arsenide wafer (GaAs) has high electron mobility and band gap. It is an ideal material for microwave and millimeter wave devices. It plays an extremely important role in the field of national defense and satellite communication. It is an important semiconductor second only to silicon wafers. Material. [0003] Gallium arsenide wafers are made of gallium arsenide single crystal materials synthesized and grown from pure arsenic and gallium after cutting, grinding, polishing and cleaning. Among them, the polishing process is to achieve ultra-high precision The key process of surface requirements. At present, the polishing process of gallium arsenide wafers widely used at home and abroad is chemical mechanical polishing (CMP) process. The CMP process is a combined process of the synergistic effec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24B37/04B24B37/10C09G1/02
CPCB24B37/044B24B37/107C09G1/02
Inventor 周铁军刘锋肖进龙刘留
Owner 广东先导微电子科技有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com