A kind of thin film transistor preparation method based on aqueous ultrathin ZrO2 high-k dielectric layer

Abstract

The invention relates to a preparation method of a thin film transistor based on a water-based ultrathin ZrO2 high k dielectric layer, and belongs to the technical field of semiconductor thin film transistor preparation. N type indium oxide and p type nickel oxide semiconductor channel layers are combined, so as to prepare the full water-based thin film transistor, low-resistivity silicon is used as a substrate and a gate electrode, and a water-based sol-gel method, UV optical processing and thermal annealing are combined, so as to prepare the ultrathin ZrO2 gate dielectric layer and the In2O3 and NiO semiconductor channel layers with high transmittance and good chemical stability, so that a TFT device with high performance and low energy consumption is prepared. The preparation method has the advantages of simple preparation process, low cost, simplicity and convenience in operation, reliable principle, good product performance, preparation environmental friendliness and wide application prospect, and a feasible plan is provided for widely preparing the thin film transistor with high performance.

Description

Technical field: [0001] The invention belongs to the technical field of semiconductor thin film transistor preparation, and relates to a method for preparing a thin film transistor based on a green and environmentally friendly hydrosol, in particular to a water-based ultra-thin zirconia (ZrO 2 ) is a high-k dielectric layer, with n-type indium oxide (In 2 o 3 ) and p-type nickel oxide (NiO) as a method for preparing a thin film transistor with a semiconductor channel layer. Background technique: [0002] In recent years, thin film transistors (Thin Film Transistor, TFT) have played an important role in active matrix liquid crystal display devices (Active Matrix Liquid Crystal Display, AMLCD), from low-temperature amorphous silicon TFT to high-temperature polysilicon TFT, technology is becoming more and more Mature, the application object has also developed from only driving LCD (Liquid Crystal Display) to both driving LCD and OLED (Organic Light Emitting Display), and even...

AI Technical Summary

Problems solved by technology

Through the review of relevant patents and literature, there are few reports on the preparation of TFT channel layers by the "water sol" method. Based on water-based ZrO 2 The all-aqueous low-temperature TFT device with high-k dielectric layer is even more unexplored

In addition, most of the reports on the use of solution-based TFT in the prior art focus on n-type semiconductor devices, and the research on p-type semiconductor devices is almost blank.

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