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Metal oxide thin film transistor and preparation method therefor, array substrate and display apparatus

A technology of oxide thin film and transistor, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, electric solid-state device, etc., can solve the problems of etching method preparation, etc., and achieve the effect of low cost, simple preparation process and good stability

Inactive Publication Date: 2016-06-01
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to avoid the deficiencies of the prior art and provide a metal oxide thin film transistor and its preparation method. The metal oxide thin film transistor and its preparation method solve the problem that the metal oxide thin film transistor in the prior art cannot The problem of preparation by method back channel etching method, the metal oxide thin film transistor and its preparation method of the present invention can be prepared by wet method back channel etching method, has the advantages of simple preparation process and the stability of the prepared metal oxide thin film transistor Good, low-cost features

Method used

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  • Metal oxide thin film transistor and preparation method therefor, array substrate and display apparatus
  • Metal oxide thin film transistor and preparation method therefor, array substrate and display apparatus

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Embodiment 1

[0034] A metal oxide thin film transistor, such as figure 1 As shown, it includes a gate 02 disposed on a substrate 01, a gate insulating layer 03 covering the gate 02, a semiconductor active layer 04 disposed above the gate insulating layer 03, an active layer protection layer 05, an active layer The source and drain electrodes on the protective layer (the source is marked with 06-1, the drain is marked with 06-2) and the passivation layer 07.

[0035] Among them, the active layer protective layer is (MO)x(SnO 2 )y film, where 0≤x<1, 0.4≤y≤1, and x+y=1, M is silicon, aluminum, gallium, magnesium, calcium, strontium, bismuth, tantalum, hafnium, zirconium, scandium, yttrium or A combination of one or two or more arbitrary elements in the lanthanide rare earth elements.

[0036] The thickness of the protective layer of the active layer is 1-30 nm, preferably 2-10 nm.

[0037] The active layer is a metal oxide semiconductor material, and the active layer can be composed of a s...

Embodiment 2

[0044] A method for preparing a metal oxide thin film transistor, which is used to prepare the metal oxide thin film transistor of Example 1. Such as Figure 2 to Figure 5 shown, including the following steps.

[0045] a) Deposit the gate metal layer film on the substrate 01 by magnetron sputtering, and form a pattern including the gate 02 of the thin film transistor and the gate line through a photolithography process, such as figure 2 shown.

[0046] It should be noted that the material of substrate 01 can be a hard glass substrate or a flexible substrate, such as: polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyamide imine (PI) or metal foil flexible substrate.

[0047] It should be noted that the substrate 01 may be a substrate without any film layer formed, such as white glass, or a substrate formed with other film layers or patterns, such as a buffer layer formed substrate. The photolithography process generally includes processes such as photore...

Embodiment 3

[0061] This embodiment provides a method for preparing a thin film transistor, which specifically includes the following steps:

[0062] a) A 200nm metal molybdenum thin film is deposited on the substrate by magnetron sputtering, and a gate metal layer is formed by a photolithography process.

[0063] b) Depositing a laminated gate insulating layer film by chemical vapor deposition, the gate insulating layer film is silicon nitride with a thickness of 250nm and silicon oxide with a thickness of 50nm, and the gate insulating layer is formed by a photolithography process.

[0064] c) After the gate insulating layer is completed, the active layer and the active layer protection layer are sequentially deposited by magnetron sputtering deposition method, wherein the active layer is a 50nm thick indium gallium zinc oxide (IGZO) film, and the active layer protection layer is The layer is a 5nm thick gallium tin oxide (GaSnO) film. Finally, the layer of the active layer and the prote...

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Abstract

A metal oxide thin film transistor and a preparation method therefor, an array substrate and a display apparatus are disclosed. An active layer protection layer for separating an active layer from source and drain electrodes is arranged in the thin film transistor; the active layer protection layer is an (MO)x(SnO2)y thin film, wherein x is greater than or equal to 1 and less than 1; y is greater than or equal to 0.4 and less than or equal to 1; x+y=1; and M is selected from any one or a combination of any more than two kinds of rare earth elements of silicon, aluminum, gallium, magnesium, calcium, strontium, bismuth, tantalum, hafnium, zirconium, scandium, yttrium or lanthanide. According to the invention, the metal oxide thin film transistor prepared by a wet method back channel etch mode is realized, and the preparation process is simple; the prepared metal oxide thin film transistor is high in stability and low in cost; and the array substrate and the display apparatus equipped with the metal oxide thin film transistor also have the characteristics of high stability and low cost.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a metal oxide thin film transistor and a preparation method thereof, an array substrate and a display device having the metal oxide thin film transistor. Background technique [0002] In recent years, the new flat panel display (FlatPanelDisplay, FPD) industry has developed rapidly, and the high demand for large-size, high-resolution flat panel displays is increasing. Thin Film Transistor (TFT) backplane technology, which is the core technology of the FPD industry, is also undergoing profound changes. [0003] Metal oxide (MetalOxide, MO) TFT not only has the characteristics of high mobility, can be prepared at room temperature, and is transparent to visible light, but also has excellent large-area uniformity. Therefore, oxide TFT technology has attracted the attention of the industry since its birth. [0004] Metal oxide semiconductor TFT technology is considered...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/786H01L29/66409H01L2924/13069
Inventor 徐华徐苗李民李洪濛邹建华陶洪王磊
Owner SOUTH CHINA UNIV OF TECH
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