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High-melting-point heat-conducting electronic material and preparation method thereof

An electronic material with a high melting point technology, which is applied in the field of high melting point thermally conductive electronic materials and its preparation to achieve high melting point and good thermal conductivity

Inactive Publication Date: 2016-06-08
SUZHOU KEMAO ELECTRONICS MATERIALS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since electronic components generate heat, how to conduct heat and conduct it without damaging the original devices has become a future research direction. Existing electronic materials still have defects in this regard.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] S1: Add 30 parts of ACS resin, 1 part of titanium dioxide, 2 parts of zinc carbonate and 10 parts of ethyl 9-fluorenylidene acetate into the reactor and stir for 20 minutes at a temperature of 100°C to obtain a mixed solution A;

[0017] S2: Add 15 parts of fumaric acid resin, 0.5 part of sulfazone, 0.5 part of zinc 1-butanethiol and 9 parts of sorbitan trioleate into the reactor and stir for 10 minutes at a temperature of 60°C to obtain a mixed solution B;

[0018] S3: Add 1 part of copper-beryllium alloy rod, 1 part of magnesium thiocyanate and 3 parts of siltianil to 15 parts of leaf alcohol acetal, ultrasonically vibrate for 3 minutes, and then mix it with mixed solution A and mixed solution B at a temperature of 120 Stir the reaction at °C for 1 h; then lower the temperature to room temperature at a rate of 4 °C / min to obtain the high-melting thermally conductive electronic material.

Embodiment 2

[0024] S1: Add 40 parts of ACS resin, 3 parts of titanium dioxide, 5 parts of zinc carbonate and 13 parts of ethyl 9-fluorenylidene acetate into the reactor and stir for 30 minutes at a temperature of 110°C to obtain a mixed solution A;

[0025] S2: Add 25 parts of fumaric acid resin, 3 parts of sulfazone, 2.5 parts of zinc 1-butanethiol and 15 parts of sorbitan trioleate into the reactor and stir for 20 minutes at a temperature of 80°C to obtain a mixed solution B;

[0026] S3: Add 3 parts of copper-beryllium alloy rods, 4 parts of magnesium thiocyanate and 7 parts of siltianil to 20 parts of leaf alcohol acetal, ultrasonically vibrate for 5 minutes, and then mix it with mixed solution A and mixed solution B at a temperature of 140 Stir the reaction at °C for 3 h; then lower the temperature to room temperature at a rate of 8 °C / min to obtain the high-melting thermally conductive electronic material.

Embodiment 3

[0032] S1: Add 32 parts of ACS resin, 2 parts of titanium dioxide, 3 parts of zinc carbonate and 11 parts of ethyl 9-fluorenylidene acetate into the reactor and stir for 20 minutes at a temperature of 100°C to obtain a mixed solution A;

[0033] S2: Add 18 parts of fumaric acid resin, 1 part of sulfazone, 1 part of zinc 1-butanethiol and 11 parts of sorbitan trioleate into the reactor and stir for 20 minutes at a temperature of 60°C to obtain a mixed solution B;

[0034] S3: Add 2 parts of copper-beryllium alloy rods, 2 parts of magnesium thiocyanate and 4 parts of siltianil to 17 parts of leaf alcohol acetal, ultrasonically vibrate for 3 minutes, and then mix it with mixed solution A and mixed solution B at a temperature of 120 Stir the reaction at °C for 1 h; then lower the temperature to room temperature at a rate of 6 °C / min to obtain the high-melting thermally conductive electronic material.

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Abstract

The invention discloses a high-melting-point heat-conducting electronic material which comprises the following components in parts by weight: 30-40 parts of ACS (acrylonitrile-chlorinated polyethylene-styrene) resin, 15-25 parts of fumaric acid resin, 1-3 parts of titanium dioxide, 2-5 parts of zinc carbonate, 0.5-3 parts of sulfinpyrazone, 10-13 parts of ethyl 9-fluorenylidene acetate, 1-3 parts of copper-beryllium alloy bar, 1-4 parts of magnesium thiocyanide, 0.5-2.5 parts of 1-butanethiol zinc, 8-14 parts of dinona phthalate, 9-15 parts of sorbitan trioleate, 3-7 parts of silthiopham and 15-20 parts of leaf acetal. The electronic material has the advantages of higher melting point and favorable heat-conducting property, and can better adapt to the existing electronic components.

Description

technical field [0001] The invention belongs to the field of electronic material preparation, and in particular relates to a high-melting-point heat-conducting electronic material and a preparation method thereof. Background technique [0002] Electronic materials refer to the materials used in the fields of microelectronics, optoelectronic technology and basic products of new components, mainly including semiconductor microelectronic materials represented by single crystal silicon; optoelectronic materials represented by laser crystals; dielectric ceramics and heat-sensitive ceramics. Representative electronic ceramic materials; magnetic materials represented by neodymium iron boron (NdFeB) permanent magnet materials; optical fiber communication materials; data storage materials based on magnetic storage and optical disk storage; piezoelectric crystals and thin film materials; hydrogen storage materials and lithium ions Embedded materials are represented by green battery ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L33/20C08L35/00C08K13/02C08K3/22C08K3/26C08K5/37C08K3/08
CPCC08L33/20C08L2203/20C08L35/00C08K13/02C08K2003/2241C08K3/26C08K5/37C08K2003/085
Inventor 邹黎清
Owner SUZHOU KEMAO ELECTRONICS MATERIALS TECH
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