A three-dimensional biomimetic composite material based on anti-reflection and double-layer p/n heterojunction and its application
A biomimetic composite material and heterojunction technology, which is applied in the field of three-dimensional biomimetic composite materials, namely silicon-titanium dioxide-polyaniline composite materials, can solve the problems of low photoelectric conversion efficiency, easy agglomeration, and difficult recycling, and achieve excellent anti-reflection performance, The effect of reducing compounding and facilitating recycling and reuse
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Embodiment 1
[0026] Step 1: Preparation of silicon cone
[0027] Prepare 100 mL of KOH solution with pH=13, add 25 mL of isopropanol to it, place the silicon wafer in the solution, etch at 70° C. for 30 min, and continuously stir with mechanical stirring during the etching process. After etching, the wafers were rinsed with distilled water and then blown dry with nitrogen.
[0028] Step 2: Growing TiO on the sidewall of the silicon cone 2 seed crystal
[0029] Place the silicon chip with silicon cone structure obtained in step 1 in NH 3 h 2 O, H 2 o 2 and H 2 In the mixed solution of O, the volume ratio is 1:1:5, the temperature is 80°C, and the heating time is 30min. Then, immerse in the isopropanol solution of tetrabutyl titanate with a concentration of 0.075mol / L for pulling, the pulling speed is 2mm / s, and the pulling is repeated 20 times. Calcined in the furnace for about 30min.
[0030] Step 3: TiO 2 Seed induced TiO 2 Preparation of nanorods
[0031] Attach TiO to the su...
Embodiment 2
[0036] Step 1: Preparation of silicon cone
[0037] Prepare 100 mL of KOH solution with pH=13, add 25 mL of isopropanol to it, place the silicon wafer in the solution, etch at 70° C. for 30 min, and continuously stir with mechanical stirring during the etching process. After etching, the wafers were rinsed with distilled water and then blown dry with nitrogen.
[0038] Step 2: Growing TiO on the sidewall of the silicon cone 2 seed crystal
[0039] Place the silicon chip with silicon cone structure obtained in step 1 in NH 3 h 2 O, H 2 o 2 and H 2 In the mixed solution of O, the volume ratio is 1:1:5, the temperature is 80°C, and the heating time is 30min. Then, immerse in the isopropanol solution of tetrabutyl titanate with a concentration of 0.075mol / L for pulling, the pulling speed is 2mm / s, and the pulling is repeated 20 times. Calcined in the furnace for about 30min.
[0040] Step 3: TiO 2 Seed induced TiO 2 Preparation of nanorods
[0041] Attach TiO to the su...
Embodiment 3
[0046] Step 1: Preparation of silicon cone
[0047] Prepare 100 mL of KOH solution with pH=14, add 25 mL of isopropanol to it, place the silicon wafer in the solution, etch at 50° C. for 15 min, and continuously stir with mechanical stirring during the etching process. After etching, the wafers were rinsed with distilled water and then blown dry with nitrogen.
[0048] Step 2: Growing TiO on the sidewall of the silicon cone 2 seed crystal
[0049] Place the silicon chip with silicon cone structure obtained in step 1 in NH 3 h 2 O, H 2 o 2 and H 2 In the mixed solution of O, the volume ratio is 1:1:5, the temperature is 90°C, and the heating time is 30min. Then, immerse in the isopropanol solution of tetrabutyl titanate with a concentration of 0.1mol / L for pulling. The pulling speed is 2mm / s, and the pulling is repeated 10 times. Finally, the above sample is placed in a 500°C muffle Calcined in the furnace for about 30min.
[0050] Step 3: TiO 2 Seed induced TiO 2 Pr...
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