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Method for etching micron silicon through hole

A technology of through-silicon vias and silicon wafers, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve problems such as unfavorable expansion of production, inconvenient operation, etc., and achieve good microscopic appearance and fast etching speed. Effect

Active Publication Date: 2016-06-15
领航医学科技(深圳)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the etching process of silicon wafers in this method needs to be assisted by an electric field, which is inconvenient to operate and is not conducive to expanding production.

Method used

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  • Method for etching micron silicon through hole
  • Method for etching micron silicon through hole
  • Method for etching micron silicon through hole

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] (1) A silicon wafer with a resistivity of 0.1-1 Ω·cmp and a thickness of 300 μm was ultrasonically cleaned in acetone and ethanol for 5 minutes each, and washed twice. Then wash with hot deionized water and cold deionized water for 2 to 3 times respectively, and blow dry with nitrogen gas for later use.

[0034] (2) Apply photoresist on both sides of the cleaned and dried silicon wafer, bake at 105° C. for 1 minute, expose to photolithography on both sides for 1.4 seconds, and then develop for 45 seconds.

[0035] (3) Using electron beam evaporation equipment, deposit silver with a thickness of 5nm and gold with a thickness of 10nm on the front and back sides of the silicon wafer after photolithography.

[0036] (4) Prepare a 5.74mol / L hydrofluoric acid solution and a 0.46mol / L hydrogen peroxide solution, and mix the two with a volume ratio of 10:1 to prepare a corrosion solution.

[0037] (5) Put the silicon chip in the step (3) into the prepared etching solution for ...

Embodiment 2

[0040] (1) A silicon wafer with a resistivity of 0.1-1 Ω·cmp and a thickness of 300 μm was ultrasonically cleaned in acetone and ethanol for 5 minutes each, and washed twice. Then wash with hot deionized water and cold deionized water for 2 to 3 times respectively, and blow dry with nitrogen gas for later use.

[0041] (2) Apply photoresist on both sides of the cleaned and dried silicon wafer, bake at 105° C. for 1 minute, expose to photolithography on both sides for 1.4 seconds, and then develop for 45 seconds.

[0042] (3) Using electron beam evaporation equipment, deposit silver with a thickness of 5nm and gold with a thickness of 10nm on the front and back sides of the silicon wafer after photolithography.

[0043] (4) Prepare a 5.74mol / L hydrofluoric acid solution and a 0.46mol / L hydrogen peroxide solution, and mix the two with a volume ratio of 10:1 to prepare a corrosion solution.

[0044] (5) Put the silicon chip in the step (3) into the prepared etching solution for ...

Embodiment 3

[0047] (1) A silicon wafer with a resistivity of 0.01-0.09 Ω·cmp and a thickness of 300 μm was ultrasonically cleaned in acetone and ethanol for 5 minutes each, and cleaned twice. Then wash with hot deionized water and cold deionized water for 2 to 3 times respectively, and blow dry with nitrogen gas for later use.

[0048] (2) Apply photoresist on both sides of the cleaned and dried silicon wafer, bake at 105° C. for 1 minute, expose to photolithography on both sides for 1.4 seconds, and then develop for 45 seconds.

[0049] (3) Using electron beam evaporation equipment, deposit silver with a thickness of 5nm and gold with a thickness of 10nm on the front and back sides of the silicon wafer after photolithography.

[0050] (4) Prepare a 5.74mol / L hydrofluoric acid solution and a 0.46mol / L hydrogen peroxide solution, and mix the two with a volume ratio of 10:1 to prepare a corrosion solution.

[0051] (5) Put the silicon chip in the step (3) into the prepared etching solution...

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Abstract

The invention discloses a method for etching a micron silicon through hole; the method comprises the following steps: (1) taking a silicon wafer, cleaning and drying by blowing; (2) coating photoresist at the two sides of the silicon wafer, carrying out photoetching after drying and developing; (3) depositing multiple layers of precious metal at the two sides of the photoetched silicon wafer; (4) placing the silicon wafer deposited with the precious metal into corrosion solution and reacting to form the through hole; and (5) cleaning and drying by blowing. According to the method disclosed by the invention, a double-side lithography is adopted and the etching process is also carried out at the two sides, so when the two sides are etched to together, the silicon through hole is formed; the etching speed is fast, no further treatment is needed after etching and the microstructure is good; and the micron silicon through hole can be produced in large scale.

Description

technical field [0001] The invention relates to the field of micro-nano manufacturing, in particular to a method for etching micron through-silicon holes. Background technique [0002] Micro-through-silicon vias have the advantages of small size (micron level), simple preparation process, low cost, and large-scale production. They have great application prospects in the fields of nanoelectronics, optics, thermals, chemistry, biosensors, and biodetection. Traditional silicon etching methods are mainly divided into dry etching and wet etching. Dry etching is mainly deep reactive ion etching, and its etching process is complicated and expensive due to its etching sidewall roughness and repeated etching cycles. Wet etching mainly uses hot alkali solution to etch, and there is anisotropy in the etching process, so it is difficult to obtain through holes of desired size. In addition, due to the ionic problem of the alkaline solution, it cannot enter the clean room operation and ...

Claims

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Application Information

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IPC IPC(8): B81C1/00
CPCB81C1/00087
Inventor 夏江
Owner 领航医学科技(深圳)有限公司
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