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Indium hydroxide powder and indium oxide powder

A technology of indium hydroxide powder and indium hydroxide, which is applied in the fields of chemical instruments and methods, inorganic chemistry, gallium/indium/thallium compounds, etc., and can solve the problems that hinder the high density and easy aggregation of targets

Active Publication Date: 2017-11-07
SUMITOMO METAL MINING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the indium hydroxide powder obtained by electrolysis has the problem of being very fine and easy to aggregate because the pH of the electrolyte solution is close to neutral.
Although the primary particle size of the indium oxide powder obtained by pre-calcining is relatively uniform, these particles tend to become agglomerated powder that is strongly aggregated.
Such indium oxide powder aggregates to widen the range of particle size distribution, which hinders the increase in the density of the target material.

Method used

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  • Indium hydroxide powder and indium oxide powder
  • Indium hydroxide powder and indium oxide powder
  • Indium hydroxide powder and indium oxide powder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] In Example 1, first, the concentration of the ammonium nitrate aqueous solution used as the electrolytic solution was adjusted to 0.5 mol / L, the pH was adjusted to 3.5, and the liquid temperature was adjusted to 40°C. The pH is adjusted by the amount of nitric acid added to the electrolyte. The liquid volume of the electrolytic solution was set to 100 L.

[0061] Next, electrolysis of indium hydroxide was performed using the adjusted electrolytic solution. For the anode, a metal indium plate with a purity of 99.99% was used, and for the cathode an insoluble Ti / Pt electrode was used. The current density is set to 10A / dm 2 . Next, the obtained indium hydroxide slurry was repeatedly filtered and washed, and then dried at 100° C. for 15 hours to obtain 3.6 kg of indium hydroxide powder. The crystallization efficiency of the indium hydroxide powder obtained by electrolysis is 100%.

[0062] Next, the obtained indium hydroxide powder was subjected to X-ray diffraction me...

Embodiment 2、3

[0067] For Examples 2 and 3 and Comparative Examples 5 and 6, indium hydroxide powder was produced in the same manner as in Example 1, and the calcining temperature of the indium hydroxide powder was adjusted as shown in Table 2 to produce indium oxide powder and a sintered body.

[0068] For embodiment 4~7 and comparative example 1~4,7~9, the ammonium nitrate concentration of electrolytic solution, pH, liquid temperature are as shown in table 1, and the calcining temperature of indium hydroxide powder is regulated as shown in table 2, Except for this, indium hydroxide powder, indium oxide powder, and a sintered body were produced in the same manner as in Example 1.

[0069] Table 1 below shows the orientation index and crystallization efficiency of the indium hydroxide powder, and Table 2 shows the BET value of the indium oxide powder and the relative density of the sintered body.

[0070] [Table 1]

[0071]

[0072] [Table 2]

[0073]

[0074] From the results shown ...

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Abstract

The present invention obtains a high-density sintered body. Use indium oxide powder obtained by calcining indium hydroxide powder, the orientation index of the (200) plane and (400) plane obtained by the Wilson formula is 2.0 or more, and the orientation index of the (442) plane is respectively 0.5 or less, and the ratio of the orientation index of the (400) plane to the orientation index of the (200) plane is 1.5 or more, and the diffraction peaks of the (220) plane and the (420) plane do not appear.

Description

technical field [0001] The present invention relates to indium hydroxide powder and indium oxide powder capable of producing high-density indium tin oxide sputtering targets (ITO sputtering targets). It should be noted that this application claims priority on the basis of Japanese Patent Application No. Japanese Patent Application No. 2014-47507 filed in Japan on March 11, 2014, and this application is referenced and incorporated in this application. Background technique [0002] In recent years, the use of transparent conductive films for solar cell applications and touch panel applications has increased, and accordingly, the need for materials for forming transparent conductive films such as sputtering targets has increased. Among these materials for forming a transparent conductive film, indium oxide-based sintered materials are mainly used, and indium oxide powder is used as a main raw material thereof. In order to obtain a high-density target, it is desirable that the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00
CPCC01G15/00C01P2002/72C01P2004/51C01P2006/12C01P2006/13C04B35/01C04B35/62645C04B2235/3286C04B2235/5409C04B2235/5436C04B2235/5445C04B2235/5463C01P2004/61C01P2004/62C04B35/64C04B2235/77
Inventor 菅本宪明木部龙夫川上哲史岩佐刚加茂哲郎水沼昌平
Owner SUMITOMO METAL MINING CO LTD