Method for real-time patterning of nitride grown silicon substrate
A patterning and nitride technology, which is applied in the direction of gaseous chemical plating, coating, semiconductor devices, etc., can solve the problems that are not suitable for the commercial application of silicon nitride semiconductor devices, increase the manufacturing cost, and complicate the process, so as to reduce the The effect of threading dislocation density, improving crystal quality, and reducing defect density
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[0021] The specific implementation of the method for real-time patterning of a silicon nitride growth substrate provided by the present invention will be described in detail below with reference to the accompanying drawings.
[0022] see figure 1 The method for real-time patterning of a silicon nitride growth substrate in the present invention includes the following steps: step S10, providing a substrate; step S11, using metal droplets to melt back the substrate to form a substrate on the surface of the substrate. Patterned surface; step S12 , epitaxially growing nitride on the patterned surface of the substrate.
[0023] Figure 2A ~ Figure 2D It is a process flow chart of the method for real-time patterning of a nitride growth silicon substrate according to the present invention.
[0024] See step S10 and Figure 2A , providing a substrate 200 . The substrate 200 may be sapphire, silicon carbide, silicon, lithium aluminate, or gallium arsenide.
[0025] Refer to step S1...
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