Undoped red organic light-emitting device and preparation method thereof
An electroluminescence, non-doped technology, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, electrical components, etc., can solve problems such as unfavorable industrial production, complex preparation process, increase device process cost, etc., and achieve good solubility. , high quantum efficiency, reducing the effect of concentration quenching effect and uneven dispersion
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[0052] The ITO anode layer on the ITO glass is laser etched into a 50mm square electrode, and then ultrasonically cleaned with cleaning solution and deionized water for 15 minutes, and dried with high-purity nitrogen after the process is completed.
[0053] Put the dried substrate into the plasma processing chamber and vacuumize it. When the vacuum value reaches the range of 30Pa, use 150w power to treat the ITO anode with oxygen plasma for 5min.
[0054] The hole injection layer PEDOT:PSS was prepared in a clean atmospheric environment. The spin coating parameters were selected as 4000rpm, and the spin coating time was 60s. After the preparation was completed, it was placed in a nitrogen glove box for annealing at 150°C.
[0055] The light-emitting layer is spin-coated on the hole transport layer, the organic mixed host material of the light-emitting layer is PVK, and the phosphorescent dopant material is Hex-Ir (piq) 3 , select chlorobenzene, dichlorobenzene or toluene as th...
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