AINGaN base field effect transistor of high quality MIS structure and manufacturing method thereof

A MIS structure, high-quality technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of high interface state density and gate dielectric layer of MIS interface system, poor quality of GaNMIS interface, affecting device stability and other problems, to achieve the effects of reduced MIS interface state density, high process repeatability and reliability, and high threshold voltage stability

Inactive Publication Date: 2016-07-20
SUN YAT SEN UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

High-quality Si/SiO can be prepared by thermal oxidation in Si-based devices 2 MIS interface structure, however, for GaN-based devices, the introduction of MIS gates adds some additional unfavorable factors, such as interface states, dielectric layer defects, etc., causing device instability problems
The quality of the GaNMIS interface obtained by the current pr...

Method used

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  • AINGaN base field effect transistor of high quality MIS structure and manufacturing method thereof
  • AINGaN base field effect transistor of high quality MIS structure and manufacturing method thereof
  • AINGaN base field effect transistor of high quality MIS structure and manufacturing method thereof

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Embodiment 1

[0037] Such as Figure 11 Shown is a schematic diagram of the device structure of this embodiment, and its structure includes a substrate 1, a stress buffer layer 2, a GaN epitaxial layer 3, an AlN epitaxial layer 4, a secondary epitaxial layer 5, and grooves formed by secondary epitaxy from bottom to top. , a gate dielectric layer 6, a source 7 and a drain 8 are formed at both ends, and the dielectric layer 6 at the groove channel is covered with a gate 9.

[0038] The fabrication method of the GaN-based field-effect transistor of the above-mentioned high-quality MIS structure is as follows: Figure 1-Figure 11 shown, including the following steps:

[0039] S1. Using the metal organic chemical vapor deposition method, grow a stress buffer layer (2) on the Si substrate (1), such as figure 1 shown;

[0040] S2. Using a metal organic chemical vapor deposition method to grow a GaN epitaxial layer (3) on the stress buffer layer (2), such as figure 2 shown;

[0041] S3. Usin...

Embodiment 2

[0052] Such as Figure 12 Shown is a schematic diagram of the device structure of this embodiment, which differs from the structure of Embodiment 1 only in that the GaN / AlGaN heterostructure in Embodiment 1 is formed by secondary epitaxy and a gate groove region is naturally formed at the same time, while in Embodiment 2 The structure of the secondary epitaxy is only AlGaN, and at the same time, the gate groove area is formed, and the number 11 is the AlGaN structure layer.

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Abstract

The invention relates to the semiconductor device field, discloses a GaN MISFET of high quality MIS grid structure and a manufacturing method thereof and especially relates to an improved method of a MIS interface. The device comprises a substrate, an epitaxial layer, a grid dielectric layer, a source electrode, a drain electrode and a grid electrode, wherein the epitaxial layer, the grid dielectric layer, the source electrode, the drain electrode and the grid electrode are growth on the substrate. The epitaxial layer comprises a first epitaxial growth stress buffer layer, a GaN epitaxial layer and an AIN thin layer. On the epitaxial layer, an area is selected to grow a secondary epitaxial layer and a groove channel is formed. And then, the grid dielectric layer is deposited, grid metal covers the groove channel grid dielectric layer, and two ends of the grid are covered by metal so as to form the source electrode and the drain electrode. The device structure and a manufacturing technology are simple and reliable, the MIS grid interface with high quality can be formed and performance of the GaN MISFET device is increased. The method is important for reducing a channel resistance and improving a threshold voltage stability problem.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, more specifically to a high-quality GaNMISFET structure and a preparation method thereof, and in particular to an improvement method for the interface between a gate dielectric layer and GaN of a GaNMISFET device. Background technique [0002] As a representative of the third-generation wide-bandgap semiconductor materials, GaN materials have superior properties such as large bandgap width, high breakdown electric field strength, large saturated electron drift velocity, and high thermal conductivity. GaN-based power switching devices usually use two-dimensional electron gas with high concentration and high mobility at the interface of AlGaN / GaN heterostructure to work, so that the device has the advantages of small on-resistance and fast switching speed, and is very suitable for making high-power, high-frequency , High temperature power electronic devices. [0003] The realization...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L21/336H01L29/423
CPCH01L29/42364H01L29/66446H01L29/78
Inventor 刘扬王文静何亮
Owner SUN YAT SEN UNIV
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