Enhanced fin-type insulated gate high-electronic mobility transistor

A technology with high electron mobility and insulated gates, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as large sub-threshold swings, unfavorable nanoscale digital integrated circuits, and severe short channel effects, and achieve enhanced gate controllability, low gate leakage current, and the effect of suppressing short channel effects

Active Publication Date: 2016-07-27
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the gate length of this device is small, the short channel effect is serious, and the subthreshold swing is

Method used

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  • Enhanced fin-type insulated gate high-electronic mobility transistor
  • Enhanced fin-type insulated gate high-electronic mobility transistor
  • Enhanced fin-type insulated gate high-electronic mobility transistor

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0041] Example 1: Fabrication of a fin-type AlGaN / GaN heterojunction with a width of 200 nm and a groove gate depth of 8 nm enhancement-type fin-type insulating gate high electron mobility crystal.

[0042] Step 1: Grow the buffer layer.

[0043] At a temperature of 700°C and a pressure of 1.5×10 4 Under the process conditions of Pa, the use of metal organic compound chemical vapor deposition MOCVD equipment in Figure 4 A GaN buffer layer with a thickness of 1 μm is grown on the SiC substrate shown in (a), and the reactive gases are trimethylgallium and ammonia.

[0044] Step 2: Growing the channel layer.

[0045] At a temperature of 850°C and a pressure of 1.5×10 4 Under the process conditions of Pa, a GaN channel layer with a thickness of 5 nm is grown on the GaN buffer layer by using a metal organic compound chemical vapor deposition MOCVD equipment, and the reactive gases are trimethylgallium and ammonia.

[0046] Step 3: Growing the barrier layer.

[0047] At a temp...

Example Embodiment

[0065] Example 2: Fabrication of a fin-type AlGaN / GaN heterojunction with a width of 300 nm and a groove gate depth of 5 nm enhancement-type fin-type insulating gate high electron mobility crystal.

[0066] Step A: Growing a buffer layer on the substrate.

[0067] A GaN buffer layer with a thickness of 1.5 μm is grown on the SiC substrate by using metal organic compound chemical vapor deposition MOCVD equipment. The growth process conditions are: the temperature is 700 ° C, and the pressure is 1.5 × 10 4 Pa, and its reactive gases are trimethylgallium and ammonia.

[0068] Step B: Growing a channel layer on the buffer layer.

[0069] The implementation of this step is the same as that of step 2 in Embodiment 1.

[0070] Step C: growing a barrier layer on the channel layer.

[0071] A layer of AlGaN barrier layer with a thickness of 15 nm and an Al composition of 30% was grown on the GaN channel layer by metal organic compound chemical vapor deposition MOCVD equipment. The G...

Example Embodiment

[0086] Example 3: Fabrication of a fin-type AlGaN / GaN heterojunction with a width of 250 nm and a groove gate depth of 7 nm enhancement-type fin-type insulating gate high electron mobility crystal.

[0087] Step 1: Growth buffer layer.

[0088] A GaN buffer layer with a thickness of 1.5 μm is grown on a SiC substrate by using a metal organic compound chemical vapor deposition MOCVD equipment. The growth process conditions are: the temperature is 700 ° C, and the pressure is 1.5 × 10 4 Pa, and its reactive gases are trimethylgallium and ammonia.

[0089] Step 2: Growing the channel layer.

[0090] The implementation of this step is the same as that of step 2 in Embodiment 1.

[0091] Step 3: Growing the barrier layer.

[0092] A layer of AlGaN barrier layer with a thickness of 17 nm and Al composition of 27% was grown on the GaN channel layer by metal organic compound chemical vapor deposition MOCVD equipment. The GaN channel layer and the AlGaN barrier layer formed an AlGaN...

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Abstract

The invention discloses an enhanced fin-type insulated gate high-electronic mobility transistor, which is mainly used for solving the problems of small threshold voltage and serious short channel effect of an existing enhanced device. The enhanced fin-type insulated gate high-electronic mobility transistor comprises a substrate (1), a GaN buffer layer (2), a GaN channel layer (3), an AlGaN barrier layer (4), a gate dielectric layer (5), a passivation layer (6), a source electrode, a drain electrode and a gate electrode from bottom to top, the GaN channel layer and the AlGaN barrier layer form an AlGaN/GaN heterojunction, and the source electrode and the drain electrode are arranged at the two ends of the AlGaN/GaN heterojunction. The device has the advantages of high threshold voltage, high gate control capability and small source/drain resistance, and can be taken as a small-size enhanced device.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, in particular to an enhanced fin-type insulated gate high electron mobility transistor MIS-HEMT, which can be used for nanoscale digital integrated circuits in enhanced / depleted modes. Background technique [0002] As a third-generation semiconductor material, GaN material is considered to be an excellent material for making microwave power devices and high-speed devices due to its advantages such as large band gap, high concentration of two-dimensional electron gas 2DEG and high electron saturation velocity. Especially the AlGaN / GaN heterojunction high electron mobility transistor HEMT is widely used in integrated circuits. [0003] Usually, a high-density two-dimensional electron gas 2DEG has been formed when the AlGaN / GaN high electron mobility transistor device is fabricated, and such a device belongs to the normally-on depletion-mode device D-HEMT. In order to realize the no...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/417H01L29/423H01L21/335
CPCH01L29/41758H01L29/4236H01L29/66462H01L29/778
Inventor 张金风安阳黄旭张进成郝跃
Owner XIDIAN UNIV
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