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Crystal silicon wafer nanometer textured surface structure and preparation method therefor

A technology of crystalline silicon wafers and nano-texture, which is applied in the field of texturing, and can solve problems such as the instability of the wet etching process of nano-texture

Inactive Publication Date: 2016-07-27
徐州鑫宇光伏科技有限公司 +4
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to address the instability of the existing nano-texture wet etching process and provide a method for preparing a nano-texture structure on crystalline silicon wafers with good process stability.

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  • Crystal silicon wafer nanometer textured surface structure and preparation method therefor

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preparation example Construction

[0025] A method for preparing a nano-textured structure of a crystalline silicon chip, comprising the steps of:

[0026] S1. Spin-coat the nano-silver dispersion on the surface of the crystalline silicon wafer and dry it, so that the nano-silver particles are attached to the surface of the crystalline silicon wafer;

[0027] S2. Etching the surface of the crystalline silicon wafer to form a nano suede surface;

[0028] S3, performing demetallic silver treatment on the crystalline silicon wafer;

[0029] S4. Carrying out suede modification on the surface of the crystalline silicon wafer.

[0030] The method for preparing the nano textured structure of the crystalline silicon wafer provided by the invention is applicable to polycrystalline silicon wafers, single crystal silicon wafers and other silicon wafers. This embodiment is described by taking a polycrystalline silicon wafer as an example.

[0031] In order to further improve the texture quality, the present invention pr...

Embodiment 1

[0059] (1) De-damage: Soak a P-type polysilicon wafer with a thickness of 200 μm and a size of 156 mm×156 mm in 250 g / L KOH solution for 100 seconds, then wash and spin dry.

[0060] (2) Spin-coated silver: the nano-silver dispersion (mass ratio is silver nitrate: citric acid: refrigerant: propylene glycol: TX-10: water = 2:2:1:4:6:10) is introduced into the spinner through the catheter. The dropper above the coating device automatically loads the polysilicon wafer into the rotary table of the spin coating device and starts to rotate, while the dropper above drops a certain amount of nano-silver dispersion liquid, and the thickness of the spin coating is 80nm.

[0061] (3) Etching: Put the polycrystalline silicon wafer into HF and H 2 o 2 The mixed solution (HF is 3mol / L, H 2 o 2 0.1mol / L), soak for 300s at 20°C, and then rinse.

[0062] (4) Silver removal: soak the polysilicon wafer in an ammonia solution with a concentration of 0.1mol / L for 120s, and then clean it.

[0...

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Abstract

The invention relates to the texturing field, and particularly discloses a preparation method for a crystal silicon wafer nanometer textured surface structure. The preparation method comprises the following steps of coating the surface of the crystal silicon wafer with a nanometer sliver dispersion liquid in a spin-coating manner to enable the nanometer sliver to be adhered to the surface; then etching to form a nanometer textured surface; next, removing the metal silver; and modifying the textured surface. According to the preparation method for the crystal silicon wafer nanometer textured surface structure, the nanometer silver particles are adhered to the surface of the crystal silicon wafer in a spin-coating manner, so that the nanometer silver particles are distributed uniformly; in addition, the nanometer silver particles are controllable in dimensions and are not agglomerated easily; in the subsequent etching process, metal catalysis corrosion is realized at the positions of the all the nanometer silver particles, so that the nanometer textured surfaces with quite uniform dimensions and depths can be obtained; according to the method, the stability of the process can be ensured fundamentally; and in addition, the obtained nanometer textured surface structure can be matched with subsequent diffusion and passivation processes so as to further improve the conversion efficiency of the battery. The invention also discloses the crystal silicon wafer nanometer textured surface structure.

Description

technical field [0001] The invention relates to the field of texturing, in particular to a nano-textured structure of a crystalline silicon chip and a preparation method thereof. Background technique [0002] In silicon solar cells, the textured structure on the surface of silicon wafers can effectively reduce the surface reflectance of solar cells, and is one of the important factors affecting the photoelectric conversion efficiency of solar cells. Commonly used texturing methods include mechanical grooving, laser etching, reactive ion etching (RIE), wet etching (ie chemical etching) and the like. Among them, the mechanical groove method can obtain lower surface reflectivity, but this method causes serious mechanical damage to the surface of the silicon wafer, and its yield is relatively low, so it is rarely used in industrial production. For the laser etching method, lasers are used to make different groove patterns. Striped and inverted pyramid-shaped surfaces have been ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236
CPCY02E10/50H01L31/02363
Inventor 王伟盛健张淳黄强
Owner 徐州鑫宇光伏科技有限公司