Preparation method for ZrS2 two-dimensional semi-conducting material

A two-dimensional semiconductor, inert gas technology, applied in chemical instruments and methods, inorganic chemistry, zirconium compounds, etc., can solve the problems of high melting point, unsuitable raw materials, difficult sublimation, etc., achieves good crystallinity, convenient operation, and is conducive to The effect of commercial promotion

Inactive Publication Date: 2016-08-10
GUANGDONG UNIV OF TECH
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  • Summary
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the raw materials of zirconium disulfide, such as zirconium powder, zirconia powder...

Method used

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  • Preparation method for ZrS2 two-dimensional semi-conducting material

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Experimental program
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Embodiment 1

[0019] Embodiment 1: a kind of ZrS 2 The preparation method of two-dimensional semiconductor material is characterized in that it comprises the following steps:

[0020] Step a. Place two pieces of SiO with the same size and face up on the quartz boat A. 2 / Si substrate, and then the quartz boat A with SiO 2 Put the / Si substrate together in the high-temperature tube furnace, and place the quartz boat A in the middle of the quartz tube of the high-temperature tube furnace;

[0021] Step b, spread the zirconium chloride powder in the quartz boat B, place it in the quartz tube of the high temperature tube furnace and place it at a distance of 12-15cm from the quartz boat A;

[0022] Step c, put the sulfur boat at a distance of 18-21cm from the quartz boat A, and place the sulfur boat and the quartz boat B on one side of the quartz boat A;

[0023] Step d. Pass the inert gas into the quartz tube at room temperature for 8-15 minutes, completely exhaust the air in the quartz tub...

Embodiment 2

[0025] Embodiment 2: The difference between this embodiment and Embodiment 1 is that in this embodiment, SiO is also included in step a 2 The cleaning of / Si substrate; Described cleaning is to use acetone, ethanol and deionized water at first to SiO 2 / Si substrate ultrasonic 10-15min, and then SiO 2 / Si substrate into H 2 o 2 and H 2 SO 4 Wash in the mixed solution for 2-3h, and finally wash with deionized water.

Embodiment 3

[0026] Embodiment 3: The difference between this embodiment and Embodiment 1 is that in this embodiment, the H 2 SO 4 and H 2 o 2 The volume ratio in the mixed solution is 3:1.

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Abstract

The invention discloses a preparation method for a ZrS2 two-dimensional semi-conducting material. The preparation method comprises the following steps: step a, obliquely placing two SiO2/Si substrates on a quartz boat A, then placing the quartz boat A and the SiO2/Si substrates into a high-temperature tubular furnace and putting the quartz boat A at the central position of a quartz tube of the high-temperature tubular furnace; step b, spreading zirconium chloride powder in a quartz boat B and putting the quartz boat B in the quartz tube of the high-temperature tubular furnace at a position 12 to 15 cm away from the quartz boat A; step c, putting sulfur boat at a position 12 to 15 cm away from the quartz boat A, wherein the sulfur boat and the quartz boat B are both located at one side of the quartz boat A; and step d, introducing inert gas into the quartz tube at normal temperature for 8 to 15 min to totally evacuate air in the quartz tube, then turning down the flow of the inert gas, heating the high-temperature tubular furnace to 770 to 880 DEG C and then carrying out natural cooling after complete reaction. Thus, the method provided by the invention can prepare the high-quality two-dimensional ZrS2 material by using a normal-pressure physical vapor deposition method.

Description

technical field [0001] The invention relates to the technical field of new energy materials, in particular to a ZrS 2 Preparation methods of two-dimensional semiconductor materials. Background technique [0002] Since the discovery of graphene in 2004, two-dimensional layered materials have attracted extensive attention. As the number of layers of two-dimensional materials decreases, it is affected by surface effects, volume effects, and quantum size effects. The physical properties of nanomaterials may be significantly different from those of macroscopic materials, such as monolayer Molybdenum sulfide is a direct band gap material, and its band gap becomes an indirect band gap after more than one layer. These peculiar physical properties have broad application prospects. [0003] Therefore, the growth preparation of two-dimensional materials becomes very important. The growth methods of two-dimensional materials such as molybdenum disulfide and tungsten disulfide have be...

Claims

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Application Information

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IPC IPC(8): C01G25/00
CPCC01G25/00C01P2002/82
Inventor 李京波王晓婷吴福根陈颖
Owner GUANGDONG UNIV OF TECH
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