Fabrication method of wafer-level uniaxial strain GE on Aln buried insulating layer based on amorphization and scale effect
An on-insulating, uniaxial strain technology, applied in the field of microelectronics, can solve problems such as excessive mechanical bending, poor compatibility, wafer fragmentation, etc., to avoid breakage and defect problems, high yield, smoothness high degree of effect
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Embodiment 1
[0044] Embodiment 1, making a wafer-level uniaxial tensile-strained Ge material on a 5-inch AlN buried insulating layer.
[0045] Step 1: Select a 5-inch AlN-buried Ge-on-insulator wafer and clean it.
[0046] (1a) Use acetone and isopropanol to alternately perform ultrasonic cleaning on the Ge wafer on the selected AlN buried insulating layer to remove organic contamination on the substrate surface;
[0047] (1b) Mix ammonia water, hydrogen peroxide, and deionized water in a ratio of 1:1:3 to form a mixed solution, and heat it to 120°C, soak the Ge wafer on the AlN-buried insulating layer in the mixed solution for 12 minutes, and take it out Then rinse with a large amount of deionized water to remove inorganic pollutants on the surface of the Ge wafer on the AlN buried insulating layer;
[0048] (1c) Soak the Ge wafer on the AlN buried insulating layer with HF acid buffer for 2 minutes to remove the oxide layer on the surface.
[0049] Step 2: Deposit SiO 2 Layer 4, such a...
Embodiment 2
[0076] Example 2, manufacturing a wafer-level uniaxial tensile-strained Ge material on a 6-inch AlN buried insulating layer.
[0077] Step 1: Select a 6-inch Ge-on-AlN buried insulating layer wafer and clean it.
[0078] The implementation of this step is the same as step 1 of Embodiment 1.
[0079] Step 2: Take out the Ge wafer on the AlN buried insulating layer after cleaning, and deposit SiO on the top Ge layer 1 by plasma enhanced chemical vapor deposition PECVD process 2 layer, that is, the SiH 4 The flow rate is 45sccm, N 2 O flow is 164sccm, N 2 The flow rate is 800sccm, the gas pressure is 600mTorr, the power is 60W, and the deposition temperature is 300°C, and the SiO with a thickness of 8nm is deposited. 2 Layer 4, such as figure 2 (b) shown.
[0080] Step 3: Use an ion implanter to implant a dose of 2E16cm into the top Ge layer 1 -2 , with an energy of 90keV, C ions to form an amorphized layer 5 inside the top Ge layer 1, such as figure 2 (c) shown.
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Embodiment 3
[0091] Embodiment 3, manufacturing a wafer-level uniaxial compressively strained Ge material on a 16-inch AlN buried insulating layer.
[0092] Step A: Select a 16-inch AlN-buried Ge-on-insulator wafer and clean it.
[0093] The implementation of this step is the same as step 1 of Embodiment 1.
[0094] Step B: Deposit SiO 2 Layer 4, such as figure 2 (b) shown.
[0095] Take out the cleaned Ge wafer on the AlN buried insulating layer, and deposit SiO with a thickness of 9 nm on the top Ge layer 1 by plasma-enhanced chemical vapor deposition PECVD process. 2 Layer 4, such as figure 2 (b) shown.
[0096] The deposition process is as follows: SiH 4 The flow rate is 45sccm, N 2 O flow is 164sccm, N 2 The flow rate is 800 sccm, the gas pressure is 600 mTorr, the power is 60 W, and the deposition temperature is 300° C.
[0097] Step C: forming an amorphized layer 5, such as figure 2 (c) shown.
[0098] Form SiO 2 After the layer 4, Ge ion implantation is carried out t...
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