Two-dimensional electrode of crystalline silicon solar cell and preparation method of two-dimensional electrode

A technology of solar cells and crystalline silicon cells, which is applied in the field of solar cells, can solve the problems of limited reduction of electrode light-shielding area, complicated process, and inability to realize mass production, etc., and achieve good local ohmic contact, increase of light-receiving area, and balance dilemma problem effect

Active Publication Date: 2016-08-17
LERRI SOLAR TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Some people propose to use a transparent conductive film to replace the metal fine grid, but because this method still retains the main grid, the reduction of the light-shielding area of ​​the electrode is limited, and the cancellation of the thin grid will cause poor conductivity and affect the conversion efficiency.
Some people use transparent conductive films with d

Method used

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  • Two-dimensional electrode of crystalline silicon solar cell and preparation method of two-dimensional electrode
  • Two-dimensional electrode of crystalline silicon solar cell and preparation method of two-dimensional electrode
  • Two-dimensional electrode of crystalline silicon solar cell and preparation method of two-dimensional electrode

Examples

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Example Embodiment

[0035] The method for preparing the two-dimensional electrode of the crystalline silicon solar cell includes the following steps:

[0036] The crystalline silicon wafer 4 is processed by texturing, diffusion, etching, deposition of passivation film and anti-reflection film 3, etc. The crystalline silicon wafer 4 can be a P-type or N-type monocrystalline silicon wafer, polycrystalline silicon wafer, and then a crystalline silicon cell The electrode production is as follows.

[0037] Fabricate local contact metal electrodes 2 in arrays that are in partial contact with the silicon substrate on the front and / or back of the crystalline silicon cell according to a specific pattern. The production can be made by screen printing, and laser or chemical corrosion combined with vapor deposition, light Methods of induction plating, electroplating, etc. The metal electrode pattern can be one-dimensional, two-dimensional geometric figures or a combination of one-dimensional and two-dimensional ...

Example Embodiment

[0044] Example 1:

[0045] (1) P-type monocrystalline silicon wafers are processed by texturing, diffusion, etching, deposition of passivation film and anti-reflection film;

[0046] (2) Using screen printing method to make dot-shaped silver electrodes on the front, the diameter of a single dot is 50um, and the distance between dots is 0.8mm;

[0047] (3) Sintering in the furnace body at 300-900°C, the front-side dot-shaped silver paste penetrates the anti-reflection film and the passivation film, forming a good ohmic contact with the silicon substrate;

[0048] (4) Sputtering is used to prepare 100nm AZO transparent conductive film on the spot-shaped local contact silver electrode;

[0049] (5) The silver grid line electrode is prepared by screen printing on the AZO transparent conductive film. The electrode pattern is composed of a group of equidistant parallel grid lines, the number of grid lines is 20, and the grid line width is 20um. After that, heat treatment is performed.

[0050...

Example Embodiment

[0051] Example 2:

[0052] (1) P-type monocrystalline silicon wafers are processed by texturing, diffusion, etching, deposition of passivation film and anti-reflection film;

[0053] (2) Using screen printing method to make dot-shaped silver electrodes on the front and back respectively, the diameter of a single dot is 100um, and the distance between dots is 1.5mm;

[0054] (3) Sintering in a furnace at 300-900°C, the dot-shaped silver paste on the front and back of the battery penetrates the anti-reflection film and the passivation film, forming a good ohmic contact with the silicon substrate;

[0055] (4) Sputtering is used to prepare a 110nm transparent conductive film of ITO on the dot-shaped local contact electrode;

[0056] (5) The silver electrode is prepared by ink-jet method on the ITO transparent conductive film. The electrode pattern is composed of a group of equidistant parallel thin grid lines and a group of equidistant parallel main grid lines, and the thin grid lines are ...

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Abstract

The invention discloses a two-dimensional electrode of a crystalline silicon solar cell and a preparation method of the two-dimensional electrode. The two-dimensional electrode is arranged on the front surface and/or the back surface of the crystalline silicon cell and comprises local contact metal electrodes, a transparent conductive film and metal electrodes, wherein the local contact metal electrodes are arranged on an antireflection film/passivating film in a regular pattern manner; the metal electrodes penetrate through the antireflection film/passivating film; the metal electrodes and a crystalline silicon wafer form local ohmic contact; the transparent conductive film is arranged on the antireflection film/passivating film and the local contact metal electrodes; the metal electrodes are arranged on the transparent conductive film; and the metal electrodes at the upper part and the lower part of the transparent conductive film are connected into a conductive assembly of the electrode of the crystalline silicon solar cell by the transparent conductive film. By the electrode, the light shading area of the metal electrodes and the usage amount of slurry are significantly reduced; meanwhile, good conductivity of the electrode is ensured; the dilemma between the light shielding property and the conductivity of the crystalline silicon electrode is well balanced; the conversion efficiency of the cell is improved; and the production cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a two-dimensional electrode of a crystalline silicon solar cell and a preparation method thereof. Background technique [0002] Since the first solar cell was born in Bell Laboratories in 1954, crystalline silicon solar cells have been widely used, the conversion efficiency has been continuously improved, and the production cost has continued to decline. At present, crystalline silicon solar cells account for more than 80% of the total global solar cell market, and the conversion efficiency of crystalline silicon cell production lines has exceeded 20%. The cost of electricity continues to shrink and is expected to be flat in the next few years. As a clean energy source, crystalline silicon solar cells play an increasingly important role in changing the energy structure and alleviating environmental pressure. [0003] If crystalline silicon solar cells want to continue to ma...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/068H01L31/18
CPCH01L31/022433H01L31/022466H01L31/068H01L31/1884Y02E10/547Y02P70/50
Inventor 钟宝申李华赵科雄
Owner LERRI SOLAR TECH CO LTD
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