Two-dimensional electrode of crystalline silicon solar cell and preparation method of two-dimensional electrode
A technology of solar cells and crystalline silicon cells, which is applied in the field of solar cells, can solve the problems of limited reduction of electrode light-shielding area, complicated process, and inability to realize mass production, etc., and achieve good local ohmic contact, increase of light-receiving area, and balance dilemma problem effect
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[0035] The method for preparing the two-dimensional electrode of the above-mentioned crystalline silicon solar cell comprises the following steps:
[0036] The crystalline silicon wafer 4 is processed through processes such as texturing, diffusion, etching, deposition of passivation film and anti-reflection film 3, etc. The crystalline silicon wafer 4 can be a P-type or N-type single crystal silicon wafer or polycrystalline silicon wafer, and then the crystalline silicon battery The electrodes are fabricated according to the following steps.
[0037] According to a specific pattern, on the front and / or back of the crystalline silicon cell, the local contact metal electrodes 2 distributed in an array that are in local contact with the silicon substrate can be made. The method of silk screen printing, laser or chemical corrosion can be used to cooperate with vapor deposition, photoelectric Methods of induction plating, electroplating, etc. Metal electrode patterns can be one-dime...
Embodiment 1
[0045] (1) P-type monocrystalline silicon wafers are processed through processes such as texturing, diffusion, etching, deposition of passivation film and anti-reflection film;
[0046] (2) adopt screen printing method to make dotted silver electrode on the front, the diameter of single dot is 50um, and the distance between dot and dot is 0.8mm;
[0047] (3) Carry out sintering at 300-900°C in the furnace body, and the dotted silver paste on the front side penetrates the anti-reflection film and passivation film to form a good ohmic contact with the silicon substrate;
[0048] (4) adopt the sputtering method to prepare the AZO transparent conductive film of 100nm on the dotted local contact silver electrode;
[0049] (5) Silver grid wire electrodes were prepared by screen printing on the AZO transparent conductive film. The electrode pattern consisted of a group of equidistant parallel grid lines, the number of grid lines was 20, and the width of the grid lines was 20um. Heat...
Embodiment 2
[0052] (1) P-type monocrystalline silicon wafers are processed through processes such as texturing, diffusion, etching, deposition of passivation film and anti-reflection film;
[0053] (2) Dot-shaped silver electrodes are made respectively by screen printing on the front and back, the diameter of a single dot is 100um, and the distance between dots is 1.5mm;
[0054] (3) Carry out sintering at 300-900°C in the furnace body, and the point-shaped silver paste on the front and back of the battery penetrates the anti-reflection film and passivation film, forming a good ohmic contact with the silicon substrate;
[0055] (4) Prepare a 110nm ITO transparent conductive film by sputtering on the point-like local contact electrode;
[0056] (5) On the ITO transparent conductive film, the silver electrode is prepared by inkjet method. The electrode pattern is composed of a group of equidistant parallel thin grid lines and a group of equidistant parallel busbar lines, and the thin grid l...
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Abstract
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