A kind of led chip with ito structure and cutting method thereof

Abstract

The invention discloses an ITO (Indium Tin Oxide)-structure LED (Light Emitting Diode) chip and a cutting method thereof. The cutting method comprises the following steps of firstly manufacturing an LED epitaxial wafer; then manufacturing an ITO thin film layer on the epitaxial wafer; manufacturing a medium film layer with a cutting walkway on the ITO thin film layer; manufacturing a graphical ITO thin film layer and a p-GaP window layer through wet or dry etching; manufacturing metal electrode layers on the graphical ITO thin film layer and the p-GaP window layer; carrying out chip particle cutting on the prefabricated cutting walkway by adopting a diamond blade. According to the ITO-structure LED chip and the cutting method of the ITO-structure LED chip, disclosed by the invention, the width of the prefabricated cutting walkway which is adopted is 4 to 6 mu. m larger than the thickness of the blade, so that the diamond blade is prevented from being in direct contact with an ITO thin film, the resistance on the diamond cutting blade in a high-speed rotating state is reduced, the problems of scrap attachment and generation of corner breakage, edge breakage, cracks and the like caused by direct contact while the ITO thin film and a GaP thin film are cut by the blade are solved, and the appearance quality and the reliability of products and the yield of finished products are greatly improved.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor light-emitting diode chips, in particular to an LED chip with an ITO structure and a cutting method thereof. Background technique [0002] AlGaInP light-emitting diodes have the advantages of high luminous efficiency, low energy consumption, long life, and multi-wave bands. , backlight, traffic lights, landscape lighting, etc. [0003] As the preferred semiconductor GaAs substrate material for AlGaInP light-emitting diodes, its chemical properties are stable, and it has obvious advantages such as good lattice matching with AlGaInP materials, good electrical conductivity and thermal conductivity, high quality crystals manufactured, and low mass production costs. For AlGaInP-based LED chips on GaAs substrates, a precision cutting machine system is generally used, and the cutting path conditions are pre-programmed, and the AlGaInP-based The LED chip is diced, so that the AlGaInP...

AI Technical Summary

Problems solved by technology

Since the GaAs substrate material is a hard and brittle material, especially for AlGaInP-based LED chips with a conventional ITO structure, a layer of ITO film layer will be grown on the upper surface of the epitaxial wafer during the chip manufacturing process, and then the metal electrode layer will be made. The stress of the AlGaInP-based LED chip itself increases, and the bonding force between the ITO film layer and the epitaxial layer is much smaller than the bonding force between the epitaxial layers inside the epitaxial wafer, and the ultra-thin diamond blade directly contacts the ITO film layer during cutting, Epitaxial layer and GaAs substrate, which makes AlGaInP-based LED chip processing extremely easy to cause different degrees of physical damage, especially around the front of the AlGaInP-based LED chip, the edges are prone to chipping of the epitaxial layer and GaAs substrate material, Chipping, cracks, cracks and other problems, which affect the appearance quality and reliability of AlGaInP-based LED chips, and the product qualification rate is low

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