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A kind of preparation method of tin disulfide/tin trisulfide/stannous sulfide heterojunction film

A technology of ditin trisulfide and tin disulfide, which is applied in the field of preparation of tin disulfide/ditin trisulfide/stannous sulfide heterojunction thin films, can solve the problem of the influence of photoelectric performance of battery devices, weak combination of samples and substrates, The product shape is difficult to control and other problems, to achieve the effect of non-toxic price, rich content and low price

Inactive Publication Date: 2017-06-06
XUCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are many methods to prepare heterojunction thin films, mainly including chemical vapor deposition, low-temperature vulcanization, hydrothermal method, spray pyrolysis method, continuous ion layer adsorption reaction method, etc. The equipment required by these methods is simple, easy to operate, and easy to produce. The film and thickness can be controlled, but it is difficult to obtain a product with good crystallinity and the shape of the product is difficult to control, and the combination of the obtained sample and the substrate is not firm
In addition, some organic ligands or surfactants are used in the wet chemical preparation process, which are difficult to completely remove in the product, and will have a great impact on the photoelectric performance of the resulting thin film assembled battery device

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] 1. First, use a magnetron sputtering apparatus to sputter a metal tin film with a thickness of 100 nm on the cleaned FTO glass;

[0027] 2. Weigh 0.5 g of sublimated sulfur powder and put it in a porcelain boat, and set the temperature at 350°C in a tube furnace with a metal tin film with a thickness of 100 nm, and react for 3 hours;

[0028] 3. Magnetron sputtering a metal tin film with a thickness of 100 nm on the vulcanized film obtained above, and then vacuum sintering in a tube furnace at 350° C. for 3 hours to obtain the target product film.

Embodiment 2

[0030] 1. First, use a magnetron sputtering apparatus to sputter a metal tin film with a thickness of 150 nm on the cleaned FTO glass;

[0031] 2. Weigh 0.8 g of sublimated sulfur powder and put it in a porcelain boat, and set the temperature at 450°C in a tube furnace with a metal tin film with a thickness of 150 nm, and react for 3 hours;

[0032] 3. Magnetron sputtering a metal tin film with a thickness of 150 nm on the vulcanized film obtained above, and then vacuum sintering in a tube furnace at 450° C. for 3 hours to obtain the target product film.

Embodiment 3

[0034] 1. First, use a magnetron sputtering apparatus to sputter a metal tin film with a thickness of 50 nm on the cleaned FTO glass;

[0035] 2. Weigh 0.5 g of sublimated sulfur powder and put it in a porcelain boat, and set the temperature at 400°C in a tube furnace with a metal tin film with a thickness of 50 nm, and react for 2 hours;

[0036] 3. Magnetron sputtering a metal tin film with a thickness of 50 nm on the vulcanized film obtained above, and then vacuum sintering in a tube furnace at 400° C. for 2 hours to obtain the target product film.

[0037] The present invention mainly prepares SnS / Sn by gas-solid reaction 2 S 3 / SnS 2 Heterojunction thin films are quite different from traditional solid-phase and liquid-phase methods. Although the liquid phase method is a method that is used more often, it takes a long time to prepare a film by the liquid phase method, and the prepared film has poor adhesion. Among the non-liquid-phase methods for preparing thin films, ...

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Abstract

The invention discloses a method for preparing a stannic sulfide / antimony trisulfide / stannous sulfide heterojunction film. The method includes the following steps: using a magnetron sputtering instrument to sputter Sns of different thicknesses on a FTO conductive glass, weighing different amounts of sulfur powders, conducting sulfuration in a tube furnace and obtaining SnS2, using absolute ethyl alcohol and distilled water to wash the SnS2 for three times, performing vacuuming and drying; then using the magnetron sputtering instrument to sputter Sn on the SnS2 conductive glass, placing the SnS2 conductive glass in the tube furnace for vacuuming and sintering, and obtaining an object product. The method obtains the compact Sn by using the magnetron sputtering, and conducts sintering under vacuum conditions and obtains the object product through solid phase reaction. The method is simple to operate, has no pollution to the environment, has a short reaction cycle, and forms compact films.

Description

technical field [0001] The invention belongs to the field of semiconductor photoelectric conversion materials and inorganic solar cells, and mainly relates to a preparation method of a tin disulfide / tin trisulfide / stannous sulfide heterojunction film that can be used in inorganic solar cells. [0002] Background technique: [0003] In recent years, with the depletion of fossil energy and non-renewable energy, the world is falling into an energy crisis, and countries are actively looking for renewable energy to replace fossil energy. Scientists are looking for various new energy sources to use, among which the research on solar energy is the most extensive, because solar energy is inexhaustible and inexhaustible, it is the material of choice for new energy sources, especially solar cells in the form of solar energy utilization The research and application of it has attracted great attention of researchers from all over the world. In recent years, inorganic nanocrystalline het...

Claims

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Application Information

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IPC IPC(8): H01L31/072H01L31/032H01L31/18C23C14/35C23C14/18C23C14/58
CPCY02E10/50
Inventor 李品将李学峰王玉丹祁强张士礼代亚威
Owner XUCHANG UNIV
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