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Photosensitive polysiloxane composition, protecting film, and element having protective film

A technology of polysiloxane and composition, applied to elements with protective film, photosensitive polysiloxane composition, and the field of protective film formed by it, can solve insufficient sensitivity, poor adhesion, and resolution Poor and other problems, to achieve the effect of good adhesion

Inactive Publication Date: 2016-10-12
CHI MEI CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this siloxane-based resin composition has insufficient sensitivity at the time of exposure, and poor resolution due to residue during development.
That is, the adhesiveness of the siloxane-based resin composition during development is not good

Method used

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  • Photosensitive polysiloxane composition, protecting film, and element having protective film
  • Photosensitive polysiloxane composition, protecting film, and element having protective film
  • Photosensitive polysiloxane composition, protecting film, and element having protective film

Examples

Experimental program
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Effect test

preparation example Construction

[0148]

[0149] The photosensitive polysiloxane composition of the present invention is a positive photosensitive composition. The method that can be used to prepare the photosensitive polysiloxane composition is for example: polysiloxane (A), o-naphthoquinone diazide sulfonate (B) and solvent (C) are placed in a stirrer and stirred to make it Uniformly mixed to form a solution state, and additive (D) may also be added if necessary, and after uniformly mixed, a solution state photosensitive polysiloxane composition can be obtained.

[0150]

[0151] The present invention further provides a protective film, which is formed by coating the above-mentioned photosensitive polysiloxane composition on an element, and then pre-baking, exposing, developing and post-baking.

[0152] The present invention also provides a component with a protective film, which includes the component and the above-mentioned protective film, wherein the protective film covers the component. Specifical...

Synthetic example A-1

[0170] In a three-necked flask with a volume of 500 milliliters, add 0.40 mole of tetraisobutoxytitanium (hereinafter referred to as TBT), 0.35 mole of phenyltrimethoxysilane (hereinafter referred to as PTMS), 0.25 mole of 3-( Triethoxysilyl] propyl succinic anhydride (hereinafter referred to as GF-20) and 280 grams of methyl isobutyl ketone (hereinafter referred to as MIBK), and add oxalic acid within 30 minutes while stirring at room temperature Aqueous solution (0.30 grams of oxalic acid dissolved in 50 grams of water). Next, the three-necked flask was immersed in an oil bath at 30°C and stirred for 30 minutes. Then, the oil bath was heated to 60°C within 30 minutes. The temperature of the solution dropped When the temperature reaches 105°C (ie, the reaction temperature), continue heating and stirring for 3 hours (ie, the polycondensation time) for polymerization. Then, use distillation to remove the solvent and by-products to obtain polysiloxane A-1 The types and usage amo...

Synthetic example A-10

[0174] In a three-necked flask with a volume of 500 milliliters, add 0.50 mole of methyltrimethoxysilane (hereinafter referred to as MTMS), 0.45 mole of phenyltrimethoxysilane (hereinafter referred to as PTMS), 0.05 mole of 3-( Trimethoxysilyl) propyl glutaric anhydride (hereinafter referred to as TMSG) and 250 grams of propylene glycol monoethyl ether (hereinafter referred to as PGEE), and add aqueous oxalic acid (0.40 grams of oxalic acid solution) within 30 minutes while stirring at room temperature in 75 grams of water). Next, the three-necked flask was immersed in a 30° C. oil bath and stirred for 30 minutes. Then, the temperature of the oil bath was raised to 120° C. over 30 minutes. When the temperature of the solution dropped to 105° C. (ie, the reaction temperature), the polymerization was continued with heating and stirring for 5 hours (ie, the polycondensation time). Then, the solvent and by-products are removed by distillation to obtain polysiloxane A-10. The ty...

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Abstract

The invention provides a photosensitive polysiloxane composition, a protective film, and an element having the protective film. The photosensitive polysiloxane composition comprises polysiloxane (A), 1,2-naphthoquinonediazide-5-sulfonate (B), and a solvent (C). Polysiloxane (A) is obtained through polymerization of monomers. The monomers comprise a titanium-containing compound (a-1), and a siloxane monomer (a-2) represented by the formula (2). The titanium-containing compound (a-1) is picked from a group composed of compounds represented by the free formula (1-1) and titanium dimers that can be degraded by water. Ti(R1)a(R2)4-a formula (1-1)Si(Ra)w(Orb)4-w formula (2).

Description

technical field [0001] The invention relates to a photosensitive polysiloxane composition, a protective film and an element with the protective film. In particular, it relates to a photosensitive polysiloxane composition having good adhesion during development, a protective film formed therefrom, and an element having the protective film. Background technique [0002] In recent years, with the development of the semiconductor industry, liquid crystal display (LCD) and organic electro-luminescence display (OELD), the accompanying demand for size reduction has made photolithography ) process has become a very important issue. In the photolithography process, the desired pattern must be finer to achieve the purpose of size reduction. Generally, the miniaturized pattern is formed by exposing and developing a positive photosensitive polysiloxane composition with high resolution and high photosensitivity. It is worth mentioning that the positive photosensitive polysiloxane comp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/075G02B6/122G02F1/1333
CPCG02B6/1221G02F1/133345G03F7/0757G03F7/0043G03F7/0233G03F7/038
Inventor 吴明儒施俊安
Owner CHI MEI CORP