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Epitaxial wafer of light-emitting diode and growing method thereof

A technology of light-emitting diodes and growth methods, which is applied in the field of epitaxial wafers of light-emitting diodes and their growth, can solve problems such as excessive local current and device failure, improve antistatic ability, improve expansion ability, and improve the problem of excessive local current Effect

Inactive Publication Date: 2016-10-12
HC SEMITEK SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problem of device failure due to excessive local current in the prior art, an embodiment of the present invention provides an epitaxial wafer of a light-emitting diode and a growth method thereof

Method used

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  • Epitaxial wafer of light-emitting diode and growing method thereof
  • Epitaxial wafer of light-emitting diode and growing method thereof

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Embodiment 1

[0032] An embodiment of the present invention provides an epitaxial wafer of a light emitting diode, see figure 1 , the epitaxial wafer includes a sapphire substrate 1, and a buffer layer 2, an undoped GaN layer 3, an N-type GaN layer 4, a current spreading layer 5, a shallow well layer 6, and a multi-quantum well stacked sequentially on the sapphire substrate 1 layer 7, low-temperature P-type GaN layer 8, P-type electron blocking layer 9, high-temperature P-type GaN layer 10, and P-type contact layer 11.

[0033] In this embodiment, the current spreading layer 5 includes an AlN layer 51 , an InGaN layer 52 and a GaN layer 53 stacked on the N-type GaN layer 4 in sequence. The buffer layer 2 is a GaN layer. The shallow well layer 6 includes alternately stacked In x Ga 1-x N layer and GaN layer, 0y Ga 1-y N layer and GaN layer, 0.2<y<0.5. The P-type electron blocking layer 9 is an AlGaN layer.

[0034] Optionally, the thickness of the AlN layer 51 may be 1-5 nm.

[0035] ...

Embodiment 2

[0053] An embodiment of the present invention provides a method for growing an epitaxial wafer of a light emitting diode, which is suitable for growing the epitaxial wafer of a light emitting diode provided in Embodiment 1, see figure 2 , the growth method includes:

[0054] Step 200: Perform high-temperature cleaning treatment on the sapphire substrate in a hydrogen atmosphere at a temperature of 1000-1200° C. for 5-20 minutes, and perform nitriding treatment.

[0055] In this example, nitrogen (N 2) as carrier gas, trimethylgallium (TMGa), triethylgallium (TEGa), trimethylaluminum (TMAl), trimethylindium (TMIn) and ammonia (NH3) as Ga, Al, In And N source, use silane (SiH4) and dimagnesium (CP2Mg) as N and P type dopants respectively.

[0056] Step 201: Control the growth temperature to 450-600° C., the growth pressure to 75-200 Torr, the V / III ratio to 100-400, and the rotation speed to 800-1200 r / min, and grow a buffer layer with a thickness of 10-30 nm on the sapphire ...

Embodiment 3

[0085] An embodiment of the present invention provides a method for growing an epitaxial wafer of a light emitting diode. The difference between the growth method and the growth method provided in Embodiment 2 lies in that the thickness of each layer in the current spreading layer is different. Specifically, the thickness of the AlN layer is 2-3 nm, the thickness of the InGaN layer in the current spreading layer is 30-40 nm, and the thickness of the GaN layer in the current spreading layer is 12-16 nm.

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Abstract

The invention discloses an epitaxial wafer of a light-emitting diode and a growing method thereof, and belongs to the technical field of semiconductors. The epitaxial wafer comprises a sapphire substrate, as well as a buffer layer, a GaN-undoped layer, n N-type GaN layer, a current expansion layer, a shallow well layer, a multiple quantum well layer, a low-temperature P-type GaN layer, a P-type electron blocking layer, a high-temperature P-type GaN layer and a P-type contact layer which are overlapped on the sapphire substrate in sequence, wherein the current expansion layer comprises an AlN layer, an InGaN layer and a GaN layer. The potential barrier can be improved by taking AlN as a wide bandgap semiconductor, so that electrons are decelerated, the transverse expansion capacity of the electrons is increased, and the height of the potential barrier is decreased through the NnGaN layer to play a role of a reservoir; and moreover, the GaN layer can prevent In diffusion in the InGaN layer from causing electron overflow, the expansion capacity of current is finally improved, the problem of local current excess is solved, the electron overflow is effectively reduced, and the anti-static capacity of an LED is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a light emitting diode and a growth method thereof. Background technique [0002] The core part of a light emitting diode (Light Emitting Diode, referred to as LED) is a wafer composed of a p-type semiconductor and an n-type semiconductor. There is a transition layer between the p-type semiconductor and the n-type semiconductor, which is called a pn junction. In the pn junction, the holes injected by the p-type semiconductor recombine with the electrons injected by the n-type semiconductor, and the excess energy is released in the form of light, which directly converts electrical energy into light energy. [0003] At present, 80% of LED production uses sapphire (Al 2 o 3 ) substrate. Al 2 o 3 Lattice mismatch with GaN and there is a large difference in thermal expansion coefficient, a large number of lattice defects will be introduced during the ...

Claims

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Application Information

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IPC IPC(8): H01L33/32H01L33/14H01L33/00
CPCH01L33/32H01L33/007H01L33/14
Inventor 肖云飞张华
Owner HC SEMITEK SUZHOU
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