Organic solar cell and preparation method based on zno nanoparticle cathode buffer layer
A cathode buffer layer and solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as ZnO nanoparticle thin film interface roughness, carrier transport and separation obstruction, device large interface contact resistance, etc., to reduce Effects of recombination probability, increased electron mobility, and increased photocurrent density
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Embodiment 1
[0030] Embodiment 1 (control group):
[0031] Clean the substrate composed of transparent substrate and transparent conductive anode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat PEDOT:PSS solution on the surface of transparent conductive anode ITO (3000rpm, 60s, 30nm) The anode buffer layer was prepared, and the formed film was thermally annealed (130°C, 30min), and PTB7:PC was prepared by spin coating on the anode buffer layer 71 BM (1:1.7, 20mg / ml) photoactive layer (1500rpm, 50s, 200nm), spin-coated ZnO nanoparticles (5000rpm, 40s, 50nm) on the surface of the photoactive layer to prepare the cathode buffer layer, and the formed film Carry out low-temperature baking (30°C, 20min); vapor-deposit metal cathode Ag (100nm) on the cathode buffer layer. Under standard test conditions: AM 1.5, 100mW / cm 2 , the open circuit voltage of the device was measured (V OC )=0.72V, short-circuit current (J SC )=12.9mA / cm 2 , fill factor ...
Embodiment 2
[0033] Clean the substrate composed of transparent substrate and transparent conductive anode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat PEDOT:PSS solution on the surface of transparent conductive anode ITO (3000rpm, 60s, 30nm) The anode buffer layer was prepared, and the formed film was thermally annealed (130°C, 30min), and PTB7:PC was prepared by spin coating on the anode buffer layer 71 BM (1:1.7, 20mg / ml) photoactive layer (1500rpm, 50s, 200nm), the mixed solution of ZnO nanoparticles, NTCDA and shellac (5000rpm, 40s, 50nm, NTCDA proportion) was spin-coated on the surface of the photoactive layer 0.5wt%, and shellac accounted for 10wt%) to prepare a cathode buffer layer, and bake the formed film at a low temperature (30°C, 20min); vapor-deposit a metal cathode Ag (100nm) on the cathode buffer layer. Under standard test conditions: AM 1.5, 100mW / cm 2 , the open circuit voltage of the device was measured (V OC )=0.73V, s...
Embodiment 3
[0035] Clean the substrate composed of transparent substrate and transparent conductive anode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat PEDOT:PSS solution on the surface of transparent conductive anode ITO (3000rpm, 60s, 30nm) The anode buffer layer was prepared, and the formed film was thermally annealed (130°C, 30min), and PTB7:PC was prepared by spin coating on the anode buffer layer 71 BM (1:1.7, 20mg / ml) photoactive layer (1500rpm, 50s, 200nm), the mixed solution of ZnO nanoparticles, NTCDA and shellac (5000rpm, 40s, 50nm, NTCDA proportion) was spin-coated on the surface of the photoactive layer 1wt%, shellac accounted for 9.5wt%) to prepare a cathode buffer layer, and the formed film was baked at low temperature (30°C, 20min), and a metal cathode Ag (100nm) was vapor-deposited on the cathode buffer layer. Under standard test conditions: AM 1.5, 100mW / cm 2 , the open circuit voltage of the device was measured (V OC )=...
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