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Organic solar cell and preparation method based on zno nanoparticle cathode buffer layer

A cathode buffer layer and solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as ZnO nanoparticle thin film interface roughness, carrier transport and separation obstruction, device large interface contact resistance, etc., to reduce Effects of recombination probability, increased electron mobility, and increased photocurrent density

Active Publication Date: 2018-07-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problem to be solved by the present invention is: how to provide an organic solar cell based on a ZnO nanoparticle cathode buffer layer and its preparation method, to solve the problem that due to the large gap between ZnO particles, poor dispersion, and easy formation of defects, resulting in current-carrying At the same time, the interface of the ZnO nanoparticle film is relatively rough, which makes the device have a large interface contact resistance and a high probability of carrier recombination, which will seriously restrict the performance of the device.

Method used

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Experimental program
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Effect test

Embodiment 1

[0030] Embodiment 1 (control group):

[0031] Clean the substrate composed of transparent substrate and transparent conductive anode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat PEDOT:PSS solution on the surface of transparent conductive anode ITO (3000rpm, 60s, 30nm) The anode buffer layer was prepared, and the formed film was thermally annealed (130°C, 30min), and PTB7:PC was prepared by spin coating on the anode buffer layer 71 BM (1:1.7, 20mg / ml) photoactive layer (1500rpm, 50s, 200nm), spin-coated ZnO nanoparticles (5000rpm, 40s, 50nm) on the surface of the photoactive layer to prepare the cathode buffer layer, and the formed film Carry out low-temperature baking (30°C, 20min); vapor-deposit metal cathode Ag (100nm) on the cathode buffer layer. Under standard test conditions: AM 1.5, 100mW / cm 2 , the open circuit voltage of the device was measured (V OC )=0.72V, short-circuit current (J SC )=12.9mA / cm 2 , fill factor ...

Embodiment 2

[0033] Clean the substrate composed of transparent substrate and transparent conductive anode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat PEDOT:PSS solution on the surface of transparent conductive anode ITO (3000rpm, 60s, 30nm) The anode buffer layer was prepared, and the formed film was thermally annealed (130°C, 30min), and PTB7:PC was prepared by spin coating on the anode buffer layer 71 BM (1:1.7, 20mg / ml) photoactive layer (1500rpm, 50s, 200nm), the mixed solution of ZnO nanoparticles, NTCDA and shellac (5000rpm, 40s, 50nm, NTCDA proportion) was spin-coated on the surface of the photoactive layer 0.5wt%, and shellac accounted for 10wt%) to prepare a cathode buffer layer, and bake the formed film at a low temperature (30°C, 20min); vapor-deposit a metal cathode Ag (100nm) on the cathode buffer layer. Under standard test conditions: AM 1.5, 100mW / cm 2 , the open circuit voltage of the device was measured (V OC )=0.73V, s...

Embodiment 3

[0035] Clean the substrate composed of transparent substrate and transparent conductive anode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat PEDOT:PSS solution on the surface of transparent conductive anode ITO (3000rpm, 60s, 30nm) The anode buffer layer was prepared, and the formed film was thermally annealed (130°C, 30min), and PTB7:PC was prepared by spin coating on the anode buffer layer 71 BM (1:1.7, 20mg / ml) photoactive layer (1500rpm, 50s, 200nm), the mixed solution of ZnO nanoparticles, NTCDA and shellac (5000rpm, 40s, 50nm, NTCDA proportion) was spin-coated on the surface of the photoactive layer 1wt%, shellac accounted for 9.5wt%) to prepare a cathode buffer layer, and the formed film was baked at low temperature (30°C, 20min), and a metal cathode Ag (100nm) was vapor-deposited on the cathode buffer layer. Under standard test conditions: AM 1.5, 100mW / cm 2 , the open circuit voltage of the device was measured (V OC )=...

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Abstract

The invention discloses an organic solar battery based on a ZnO nano particle cathode buffer layer and a preparation method thereof, belonging to the field of organic semiconductor thin film solar batteries. The organic solar cell provided by the present invention adopts a positive structure, and from bottom to top it is a substrate, a transparent conductive anode ITO, an anode buffer layer, a photoactive layer, a cathode buffer layer, and a metal cathode; the cathode buffer layer is made of ZnO nanometer The organic small molecular material 1,4,5,8-naphthalene tetracarboxylic anhydride (NTCDA) and shellac are simultaneously mixed into the particle dispersion. The doped organic small molecule material 1,4,5,8‑naphthalenetetracarboxylic anhydride (NTCDA) filled the gaps between the ZnO nanoparticles, improved the dispersion of the ZnO nanoparticles, and reduced the defects in the cathode buffer layer, The electron transport ability of the cathode buffer layer is improved. At the same time, by adding shellac, the combination of ZnO nanoparticles and organic small molecule materials is more dense, the surface roughness of the cathode buffer layer is reduced, the electron collection ability of the cathode buffer layer is improved, and the photoelectric conversion efficiency of the device is improved.

Description

technical field [0001] The invention belongs to the field of organic polymer photovoltaic devices or organic semiconductor thin-film solar cells, and in particular relates to an organic solar cell based on a ZnO nanoparticle cathode buffer layer. Background technique [0002] With the development of the world economy, energy consumption, environmental pollution and other issues have increasingly become the primary concerns of countries all over the world. Traditional fossil energy has been on the verge of being exhausted with people's continuous development. Solar energy, as a renewable energy source, fits the bill. The energy of solar energy reaching the ground every second is as high as 800,000 kilowatts. If 0.1% of the solar energy on the earth's surface is converted into electrical energy, the conversion rate is 5%, and the annual power generation can reach 5.6×10 12 kW / h. In the effective use of solar energy, solar photovoltaic utilization is the fastest growing and m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/44H01L51/46H01L51/42H01L51/48
CPCH10K71/12H10K85/00H10K30/80H10K30/00H10K2102/00Y02E10/549
Inventor 于军胜范谱王瀚雨黄江
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA