A nanocolumn structure organic field effect transistor memory and its preparation method

Abstract

The invention discloses a nano-column structure organic field effect transistor memory and a preparation method thereof, and relates to the fields of memory technology in the semiconductor industry and biofilm technology. The nanocolumn structure organic field effect transistor memory includes source and drain electrodes, an organic semiconductor layer, a second-type gate insulating layer, a first-type gate insulating layer, a gate electrode and a substrate, and the organic semiconductor layer is insulated from the second-type gate A nano-column thin film layer is arranged between the layers. The beneficial effect of the present invention is that the shape-controllable nano-column thin film is prepared by a simple spin-coating process and the storage performance of the device is improved, so that its storage capacity, storage speed, storage stability and its repeated erasing and writing reliability are greatly improved. Greatly improved, and reduces the cost of device preparation, has a great commercial application value.

Description

technical field [0001] The invention relates to the fields of memory technology in the organic semiconductor industry and biological thin film technology, in particular to a nano-column structure organic field-effect transistor memory and a preparation method thereof. Background technique [0002] Organic electronic devices such as organic field-effect transistors (OFETs), organic light-emitting diodes (OLEDs), organic solar cells (OPVs), sensors, etc. Due to its scalable fabrication process and small-scale structure, it has attracted extensive attention and research from academia and business circles. Memory is an important part of electronic devices for data collection, processing, storage and communication, and memory based on organic field effect transistors is easy to integrate on a large scale due to its high storage density, non-destructive readout, and the use of dielectric materials Solubility and good compatibility with complementary oxide semiconductors have attr...

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Problems solved by technology

Many research groups use molecular design, such as introducing new functional groups (Organic Electronics, 2015, 27, 18-23), changing the length of conjugation (JOURNAL OF MATERIALSCHEMISTRY, 2012, 22, 2120-2128), star compounds (Adv. Electron .Mater.2016,2,1500300) etc. to improve storage density and stability, but these new materials have disadvantages such as high development cost, long cycle and complicated process, and relatively high equipment cost.

Secondly, in order to simplify the preparation process and reduce the cost, many research groups use physical methods including thickness effect, temperature effect, hydrophilic effect and other methods to increase the storage density. Although the above measures can improve the storage performance of the device to some extent, the device the stability will decrease

The patent document with the application publication number CN104916647A discloses a field-effect transistor memory, which includes source-drain electrodes and a substrate, but does not include a nano-column film layer as a charge trapping layer, so the storage density and stability of the device are not high

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