Manufacturing method for chromium-molybdenum target

A manufacturing method and target material technology, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems that cannot meet the quality requirements of high-end manufacturing target materials, and meet the requirements of purity and density , Improve the density and strength, and the effect of uniform microstructure

Inactive Publication Date: 2016-11-23
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the chromium-molybdenum target produced by the existing technol

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method for chromium-molybdenum target
  • Manufacturing method for chromium-molybdenum target
  • Manufacturing method for chromium-molybdenum target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] It can be seen from the background technology that there is a problem that it is difficult to manufacture high-quality chromium-molybdenum targets in the prior art. Now combine the production and use of chromium molybdenum target to analyze the cause of the problem:

[0038] The chromium-molybdenum target used in sputtering technology generally requires material purity greater than or equal to 99.9%, relatively high density (requires greater than or equal to 99%), and also requires uniform microstructure and no crack defects. However, the chromium-molybdenum target produced by the prior art has a low density and cannot meet the requirements of the manufacturing industry on the quality of the target.

[0039] In order to solve the technical problem, the present invention provides a method for manufacturing a chromium-molybdenum target, comprising the following steps:

[0040] Provide chromium powder and molybdenum powder; mix the chromium powder and the molybdenum powde...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A manufacturing method for a chromium-molybdenum target comprises the steps that chromium powder and molybdenum powder are provided; the chromium powder and the molybdenum powder are mixed, and mixed powder is formed; the mixed powder is manufactured into a chromium-molybdenum target blank through the vacuum hot-pressing technology in which the heat preservation temperature ranges from 1,300 DEG C to 1,400 DEG C; and the chromium-molybdenum target blank is manufactured into the chromium-molybdenum target. According to the manufacturing method, the chromium powder and the molybdenum powder which are mixed are manufactured into the chromium-molybdenum target through the vacuum hot-pressing technology, diffusion of chromium atoms and molybdenum atoms is facilitated at the heat preservation temperature ranging from 1,300 DEG C to 1,400 DEG C, and therefore the void ratio in the manufactured chromium-molybdenum target can be effectively reduced, and the density and strength of the target are improved. Thus, the high-density chromium-molybdenum target with the density larger than or equal to 99% can be obtained through the manufacturing method, a microstructure of the obtained chromium-molybdenum target is uniform, and the requirements of magnetron sputtering for the purity and density of the target can be met.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a chromium-molybdenum target. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD) is under vacuum conditions, using low-voltage, high-current arc discharge technology, using gas discharge to evaporate the target and ionize the evaporated substance and gas, and then use the acceleration of the electric field Function, the technology of depositing the evaporated substance and its reaction product on the workpiece. PVD technology is the core technology of various industries such as semiconductor chip manufacturing, solar energy industry, and liquid crystal display (Liquid Crystal Display, LCD) manufacturing industry. [0003] The refractory metal chromium-molybdenum alloy has high hardness and stable performance, and is a good wear-resistant material and heat-conducting material. Chromium-molybdenum alloys c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B22F3/16C23C14/34C23C14/14
Inventor 姚力军潘杰相原俊夫大岩一彦王学泽段高林
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products