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A method for directional growth of compound crystals with layered structure

A technology of layered structure and crystal orientation, applied in the field of materials, can solve the problems of environmental pollution by by-products, short length of micron wires, complicated processes, etc., and achieve the effect of excellent photoelectric and thermoelectric performance.

Active Publication Date: 2018-09-14
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These preparation methods are complex in process, low in yield, short in micron wire length, high in cost, and their by-products will pollute the environment

Method used

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  • A method for directional growth of compound crystals with layered structure
  • A method for directional growth of compound crystals with layered structure
  • A method for directional growth of compound crystals with layered structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A kind of Sb with layered structure 2 Se 3 Methods of directional growth of crystals:

[0029](1) Processing of cladding glass: select phosphate glass with a drawing temperature of 660°C as the cladding, machine it into a cylinder with a diameter of 30 mm and a length of 70 mm, and then drill a diameter of 4.5 mm in the center of the glass cylinder along the axis of the cylinder , a circular hole with a length of 55mm, and the circular hole does not run through the entire glass cylinder. Both the cylindrical glass surface and the inner surface of the circular hole are mechanically and chemically polished.

[0030] (2) Directional growth of crystals: Sb with a purity of 99.999% 2 Se 3 The powder is tightly filled into the glass round hole, and then heated in an optical fiber drawing furnace. When heated to 660°C, the phosphate clad glass can be smoothly formed into filaments, at this time the Sb 2 Se 3 The powder has been completely melted (melting point 608°C). ...

Embodiment 2

[0033] A kind of Sb with layered structure 2 Te 3 Methods of directional growth of crystals:

[0034] The method of this embodiment is similar to embodiment 1, the Sb 2 Se 3 The powder is replaced by Sb with a melting point of 620°C 2 Te 3 powder, using phosphate glass with a drawing temperature of 660°C as the cladding. A cylinder with a diameter of 30 mm and a length of 80 mm is machined, and then a circular hole with a diameter of 4.0 mm and a depth of 60 mm is drilled in the center of the glass cylinder along the axis of the cylinder. The circular hole does not penetrate the entire phosphate glass cylinder. molten Sb 2 Te 3 As the cladding glass is formed into filaments, it is rapidly cooled from the molten state to room temperature at a rate of 5°C / s, and argon is used for protection during the wire drawing process. The drawn Sb with phosphate glass cladding 2 Te 3 The fiber of the crystal core is placed in a HF solution with a concentration of 35wt%, heated in ...

Embodiment 3

[0036] A kind of Sb with layered structure 2 S 3 Methods of directional growth of crystals:

[0037] The method of this embodiment is similar to embodiment 1, the Sb 2 Se 3 The powder is replaced by Sb with a melting point of 550°C 2 S 3 powder, using phosphate glass with a drawing temperature of 660°C as the cladding. A cylinder with a diameter of 20 mm and a length of 60 mm is machined, and then a circular hole with a diameter of 3.5 mm and a depth of 50 mm is drilled in the center of the glass cylinder along the axis of the cylinder. The circular hole does not penetrate the entire phosphate glass cylinder. molten Sb 2 S 3 As the cladding glass is formed into filaments, it is rapidly cooled from the molten state to room temperature at a rate of 8°C / s, and argon is used for protection during the wire drawing process. The drawn Sb with phosphate glass cladding 2 S 3 The fiber of the crystal core is placed in a HF solution with a concentration of 30wt%, heated in a wa...

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Abstract

The invention discloses a method for directional growth of compound crystal of a laminated structure. The method is a non-chemical method, and can be used for batch preparation of directionally grown chalcogenide V2VI3 (V=Sb or Bi; VI=S, Se or Te) crystal of a laminated structure. That is, the method comprises the following steps: by using a glass optical fiber wire-drawing method, filling a glass tube with a crystal compound precursor, and performing wire-drawing, wherein cladding glass is in a viscoelastic state in the wire-drawing process, and the crystal precursor is in a molten state; and while the cladding glass is rapidly cooled to the room temperature from the molten state, corroding off the cladding glass with an appropriate acid solution, thereby obtaining the chalcogenide crystal of the laminated structure which is directionally grown in the axial direction of the optical fiber. The method is wide in applicability, controllable in size of the crystal, high in yield, low in cost and free of byproduct which can cause environment pollution. Micro-wires of the prepared directionally grown chalcogenide crystal have the potential of being used in radial junction solar batteries and thermoelectric conversion three-dimensional micro devices.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a method for directional growth of compound crystals with a layered structure. Background technique [0002] With the depletion of exploitable energy sources, the environmental pollution caused by coal, natural gas, and oil extraction and processing is becoming more and more serious. Therefore, it is imminent to develop clean new energy sources. Solar cell materials can directly convert solar energy into electrical energy, and thermoelectric materials have unique properties of direct conversion of heat and electricity, which are expected to solve increasingly severe energy problems. Ⅴ 2 Ⅵ 3 (Ⅴ=Sb, Bi; Ⅵ=S, Se, Te) is a chalcogenide crystal with a layered structure, which belongs to the orthorhombic crystal system, has excellent photoelectric and thermoelectric properties, and is expected to be used in solar cells, memory switches, thermoelectric Refrigeration an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/62C30B29/46
CPCC30B29/46C30B29/62
Inventor 杨中民唐国武钱奇
Owner SOUTH CHINA UNIV OF TECH