Method for manufacturing non-linear crystal gallium selenide component

A technology of nonlinear crystals and manufacturing methods, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problems of GaSe crystals such as low transmittance, easy deformation, splitting, etc., to reduce thermal lens effect, The effect of eliminating thermal stress and reducing the density of crystal defects

Active Publication Date: 2016-12-07
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims to solve the technical problems of low transmittance of the existing GaSe crystal and its easy deformation and splitting during use, and provides a manufacturing method of nonlinear crystal GaSe components

Method used

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  • Method for manufacturing non-linear crystal gallium selenide component
  • Method for manufacturing non-linear crystal gallium selenide component
  • Method for manufacturing non-linear crystal gallium selenide component

Examples

Experimental program
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specific Embodiment approach 1

[0017] Specific embodiment one: the manufacturing method of the nonlinear crystal GaSe component of this embodiment is carried out according to the following steps:

[0018] 1. Use the volume ratio of HCl:HNO 3 =1: (3-3.5) mixed acid etches the surface of the GaSe crystal ingot for 1-2 minutes to remove impurities such as oxides on the crystal surface, then cleans and dries with ultra-pure water;

[0019] 2. Put the GaSe crystal ingot into a quartz boat or a boron nitride (PBN) boat, and then put the boat in the middle of the quartz tube; place GaSe polycrystalline powder at both ends of the boat, and the mass ratio of the crystal ingot to the polycrystalline powder is 10 :(1~2); or put GaSe polycrystalline powder at one end of the boat, and simple Se at the other end, the mass ratio of crystal ingot to polycrystalline powder is 10:(0.5~1), the mass ratio of crystal ingot to Se is 10: (0.05~0.1); Then vacuumize the quartz tube to 10-4~10-6Pa, seal the quartz tube with a hydro...

specific Embodiment approach 2

[0023] Embodiment 2: This embodiment is different from Embodiment 1 in that the drying temperature in step 1 is 50°C-60°C. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0024] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is that the quartz tube in step one is evacuated to 10 -4 ~10 -6 Pa. Others are the same as in the first or second embodiment.

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Abstract

The invention provides a method for manufacturing a non-linear crystal gallium selenide component, relates to a method for manufacturing crystal components, and aims to solve the technical problems that existing GaSe crystal has low transmittance and is easily deformed and split when being used. The method comprises the following steps: 1, etching the surface of GaSe crystal ingot, cleaning and drying; 2, putting the crystal ingot into a boat, putting the boat in the middle of a quartz tube, and putting GaSe polycrystal powder at two ends of the boat; or putting the GaSe polycrystal powder at one end of the boat, and putting Se at the other end of the boat; vacuumizing the quartz tube, sealing, and putting into a resistance furnace in a single-temperature region; 3, annealing; 4, cutting the annealed crystal ingot, and trimming to form a GaSe crystal block along the C-axial direction; and 5, fixing the GaSe crystal block at the hole of a metal base with glue, coating a polytetrafluoroethylene coat, adding an upper cover, and connecting the base and the upper cover with a fixed nut to obtain a GaSe component. The component can be used in a laser.

Description

technical field [0001] The invention relates to a manufacturing method of crystal components. Background technique [0002] Gallium selenide (GaSe) crystal has the advantages of large nonlinear coefficient, wide light transmission band, large birefringence, high laser damage threshold, and high thermal conductivity perpendicular to the optical axis. Important and one of the best material. GaSe crystals can achieve power output in the terahertz band, and its linear optical absorption coefficient in the 0.1–10.0 THz band is currently the smallest absorption of nonlinear optical crystals in the terahertz band. GaSe is a hexagonal layered crystal, space group Lattice constant a=0.375nm, c=1.595nm, each layer is combined by covalent bonds in the order of Se-Ga-Ga-Se, where the Ga-Ga bonds are parallel to the c-axis, and the layers are connected by van der Waals force combined. GaSe crystals are easily split in the direction perpendicular to the c-axis, and their relative har...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B33/02
CPCC30B29/46C30B33/02
Inventor 杨春晖马天慧雷作涛朱崇强
Owner HARBIN INST OF TECH
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