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High-electrical-insulating-property heat-conductive silicon rubber thermal interface material for LED and preparation method

A technology of thermally conductive silicone rubber and thermal interface material, which is applied in the direction of heat exchange materials, chemical instruments and methods, etc., can solve the problems of not ensuring that the surface of the filler is covered, affecting the phonon transfer, and interrupting the thermal conduction path, so as to avoid electrical Decreased insulation performance, improved electrical insulation performance, and the effect of preventing hydrolysis

Inactive Publication Date: 2016-12-14
ANHUI HEHAN OPTOELECTRONICS TECH
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  • Summary
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  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the theoretical thermal conductivity of aluminum nitride high-purity single crystal can reach 320W / (m K), which has reliable electrical insulation performance, low dielectric loss and dielectric constant, and is an ideal thermal conductive filler. After absorbing moisture, it will undergo hydrolysis reaction with water to produce Al(OH) 3 It will interrupt the thermal conduction path, which will affect the transmission of phonons. Therefore, the thermal conductivity of the finished product is low. Even if the surface is treated with a silane coupling agent, it cannot guarantee that the filler surface is 100% covered.

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] A high electrical insulation and thermal conductivity silicone rubber thermal interface material for LED, which is composed of the following raw materials in parts by weight (kg): silicone rubber matrix 60, nitrile rubber 25, aluminum nitride 22, dopamine 20, silver nitrate of 20mmol / L Solution 28, hydroxyl silicone oil 2, bis-2,5 vulcanizing agent 4, appropriate amount of deionized water, appropriate amount of Tris-HCl buffer solution, anti-aging agent RD 2, magnesium carbonate 1.5.

[0024] Specific steps are as follows:

[0025] (1) Preparation of polydopamine functionally modified aluminum nitride:

[0026] Add aluminum nitride to deionized water, ultrasonically disperse in an ultrasonic container for 40 minutes, then add dopamine aqueous solution and stir evenly with a magnetic stirrer, adjust the pH value to 8.5 with Tris-HCl buffer solution, and stir the sample at room temperature for 24 Filtrate for 1 hour, wash with deionized water until the filtrate becomes c...

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Abstract

The invention discloses a high-electrical-insulating-property heat-conductive silicon rubber thermal interface material for an LED. The material is prepared from, by weight, 45-65 parts of silicon rubber matrix, 20-30 parts of butadiene-acrylonitrile rubber, 18-26 parts of aluminum nitride, 14-24 parts of dopamine, 20-35 parts of 20 mmol / L silver nitrate solution, 1-3 parts of hydroxyl silicone oil, 2-5 parts of DBPH, a proper amount of deionized water, a proper amount of Tris-HCl buffer solution, 1-3 parts of anti-ageing agent RD and 1.5-2 parts of magnesium carbonate. Dopamine is used for forming a compact attached polydopamine layer on the surface of aluminum nitride through oxidative polymerization, silver nanoparticles are loaded on the surface of the polydopamine layer wrapping the aluminum nitrode, silcion rubber is compounded and filled, high heat conductivity and cooling performance of the silicon rubber thermal interface material are improved, and the material has good smoothness, tear strength and electric insulation property.

Description

technical field [0001] The invention belongs to the field of thermal interface materials, and in particular relates to a thermal interface material of high electrical insulation and heat conduction silicon rubber for LEDs and a preparation method. Background technique [0002] With the continuous improvement of LED manufacturing and packaging technology, the power of LED is getting bigger and bigger. At present, the input power of commercialized high-power LEDs is generally above 1W, the chip area is 1mm×1mm, and the heat flux is 100W / cm 2 Above, heat dissipation requirements are very high. The heat transfer from the chip to the external environment has to pass through several interfaces. The gap between the interfaces and the warpage of the substrate will affect the bonding and local heat dissipation, forming interface thermal resistance. With the development of high-power and high-brightness LEDs, interface thermal resistance has become one of the problems in the LED ind...

Claims

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Application Information

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IPC IPC(8): C08L83/04C08L9/02C08L83/06C08K13/06C08K9/10C08K9/02C08K3/28C08K3/26B29C35/02C09K5/14
CPCB29C35/02C08K2201/011C08L83/04C08L2203/20C08L2205/02C08L2205/03C09K5/14C08L9/02C08L83/06C08K13/06C08K9/10C08K9/02C08K2003/282C08K2003/267
Inventor 夏云
Owner ANHUI HEHAN OPTOELECTRONICS TECH