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High-efficiency annealing method for novel amorphous oxide thin film transistor (TFT)

A thin film transistor and amorphous oxide technology, which is applied in the manufacture of transistors, semiconductor devices, semiconductor/solid state devices, etc., can solve the problems of inability to anneal, complex thermal annealing methods, easy to produce pollution, etc., to improve performance and growth parameters. Independently adjustable, stain-resistant effect

Pending Publication Date: 2017-01-04
YANTAI NANSHAN UNIV
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Problems solved by technology

The traditional method is to use thermal annealing, and the annealing time is calculated in hours or minutes. Since thermal annealing is the uniform heating of the material, it will redistribute the dopant of the semiconductor material, and the thermal annealing method is complex and prone to pollution during operation.
Most importantly, thermal annealing methods cannot anneal TFTs based on heat-sensitive materials as substrates

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  • High-efficiency annealing method for novel amorphous oxide thin film transistor (TFT)

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Embodiment Construction

[0040] The present invention will be further described below through specific embodiments in conjunction with the drawings.

[0041] In the present invention, the indium oxide, titanium oxide, and zinc oxide powders used to make the ITZO target are all purchased from Sigma-Aldrich Company, with a purity greater than 99.99%.

[0042] The preparation process of the bottom gate thin film transistor with amorphous ITZO as the semiconductor layer is:

[0043] (1) Using thermal oxygen oxidation method to grow SiO 2 Gate dielectric layer:

[0044] Step 1: Use commercially purchased p-type heavily doped Si as the substrate, and wash it with acetone and alcohol ultrasonically for 10 minutes, and then repeatedly rinse with deionized water, and then blow dry with high-purity nitrogen; then p-type heavily doped Doped Si grows SiO by thermal oxygen oxidation method 2 ;SiO 2 It is grown at 900-1200℃ for 1-3 h, and the thickness is 60-200 nm;

[0045] (2) Using pulsed laser deposition technology, in ...

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Abstract

The invention discloses an annealing method for a thin film transistor (TFT) based on a novel quaternary metal oxide ITZO (In-Ti-Zn-O). The method adopts a PLD (Pulsed Laser Deposition) device, and an ITZO semiconductor layer is prepared on a SiO2 / Si substrate at a room temperature. Excimer laser is adopted to carry out annealing on the well-prepared TFT, and influences on the device by different laser annealing energy and different laser annealing times can be researched respectively. The preparation method provided by the invention is simple and controllable, all preparation steps are carries out at the room temperature, low-temperature and controllable annealing on the device are realized, the problem that the flexible substrate is hard to anneal is solved, and requirements of manufacturing a flexible display device in the industry can be met. The testing result shows that the electrical performance of the TFT is improved significantly due to laser annealing. The method can be applied to products such as an active matrix liquid crystal display device, a printer and a camera.

Description

Technical field [0001] The invention belongs to the technical field of amorphous metal oxide semiconductor thin film transistor preparation. Specifically, it relates to a new annealing method in the thin film transistor preparation process based on a new type of efficient amorphous metal oxide - an excimer laser annealing method. Background technique [0002] In recent years, Thin Film Transistor (TFT) has played an important role in Active Matrix Liquid Crystal Display (AMLCD). With the rapid advancement of science and technology, the level of semiconductor technology continues to improve, and the development of TFTs has successively included amorphous silicon TFTs, polycrystalline silicon TFTs, and microcrystalline silicon TFTs. The most widely used one at present is amorphous silicon TFT. However, the field-induced mobility of amorphous silicon TFT devices is low, the on-state resistance is large, and there are many problems in stability. Therefore, it cannot meet the cu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/428H01L29/786H01L29/10H01L29/24H01L29/40
CPCH01L29/1033H01L29/247H01L29/42364H01L29/786H01L21/428
Inventor 张倩张吉松仲维锋孙玉梅耿广州房洪杰单福凯王军庆王雅慧刘国侠
Owner YANTAI NANSHAN UNIV
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