Compact quenching detection circuit applied to array type single-photon avalanche diode (SPAD)
A single-photon avalanche and compact technology, applied in the field of semiconductors, can solve the problems of single pixel circuit power consumption chip influence, complex quenching circuit structure, unfavorable large-scale integration, etc., to shorten the quenching time and reduce the number of external control signals , the effect of fast detection speed
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[0018] The present invention will be further described below in conjunction with the accompanying drawings.
[0019] Such as figure 1 Shown is a compact detection and quenching circuit applied to an array type single photon avalanche diode, including a first PMOS transistor M1, a second NMOS transistor M2, a third PMOS transistor M3, a fourth NMOS transistor M4, and a fifth PMOS transistor M5, the first inverter I 1 And the monostable circuit, the monostable circuit is used to generate the reset signal REC; the gate of the first PMOS transistor M1 is connected to the externally input gating signal EN, the source is connected to the power supply VDD, and the drain is connected to the SPAD anode; the second NMOS transistor The gate of M2 is connected to the reset signal REC, the source is grounded to GND, and the drain is connected to the SPAD anode; the gate of the third PMOS transistor M3 is connected to the drain of the fifth PMOS transistor M5, the source is connected to th...
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