PbPdO2 material with oriented growth along [400] crystal orientation and preparation method thereof

Abstract

The invention provides a crystal orientation-controllable PbPdO2 material and a preparation method thereof. The PbPdO2 material is characterized in that the growth orientation of crystal grains corresponding to the strongest diffraction peak is [400] crystal orientation. The preparation method comprises the following steps of weighing a compound containing Fe (iron), a compound containing Pb (plumbum) and a compound containing Pd (palladium); mixing the compound containing the Fe, the compound containing the Pb, a mixing solvent and a complexing agent, so as to obtain mixing liquid containing Fe and Pb; mixing the compound containing the Pd and strong acid, so as to obtain mixing liquid containing the strong acid; mixing the mixing liquid, so as to obtain a sol; coating the sol onto a substrate, drying, and pre-burning, so as to obtain a pre-burning thin film; calcining the pre-burning thin film, so as to obtain a product. The PbPdO2 material and the preparation method have the beneficial effects that under the condition of no reliance on a lattice constant substrate with high matching degree, the PbPdO2 material is induced to perform preferable oriented growth along the [400] crystal orientation successfully, and a nanometer particle film is formed.

Description

technical field [0001] The present invention relates to the technical field of zero bandgap semiconductors, in particular to PbPdO 2 semiconductor material, as an induced PbPdO 2 A technology for the growth of materials along the [400] crystal direction, specifically a PbPdO grown along the [400] crystal direction 2 Materials and their preparation methods. Background technique [0002] Over the past ten years, PbPdO 2 As a layered transition metal oxide material, it has been extensively studied by researchers due to its unique structure and properties. T.C.Ozawa et al. first synthesized single-phase PbPdO by solid-state reaction method 2 and Cu-doped PbPdO 2 material, the proposed PbPdO 2 The crystal structure is a body-centered orthorhombic structure, and its thermoelectric properties have been studied, and it is believed that there is a metal-insulation transition temperature (T MI ). In 2008, X.L.Wang theoretical calculations at the University of Wollongong in Aus...

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Problems solved by technology

[0003] In 2009, X.L.Wang et al prepared PbPdO doped with 25at.% Co element by pulsed laser deposition method 2 Thin film, X-ray diffraction analysis shows that the film mainly grows along the conventional [211] crystal direction, and it is found that the material has electroresistance effect and giant magnetoresistance effect, but it is not found along the [400] crystal direction or other crystal directions Oriented film

From 2010 to 2016, many research groups in the world studied the PbPdO 2 Conducted research on the doping of Co, Mn, Cu, Zn and other transition metal elements, and prepared PbPdO with large grain size by solid-state reaction and pulsed laser deposition. 2 Materials, it is found that these materials have low-temperature ferromagnetism and giant magnetoresistance effects, and there is no report that the method used by them grows along the [400] crystal direction or other crystal orientations, nor does it change the concentration of dopant ions to control the growth of crystals along a specific crystal orientation

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