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Preparation method of quartz glass with low expansion coefficient and quartz glass

A low expansion coefficient, quartz glass technology, applied in glass manufacturing equipment, glass molding, manufacturing tools, etc., can solve the problems of high expansion coefficient and unable to meet the needs of high-end markets

Inactive Publication Date: 2017-02-22
CHINA BUILDING MATERIALS ACAD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] With the improvement of technological level requirements, the expansion coefficient is 5.7×10 -7 High-purity quartz glass at / °C can no longer meet the application requirements in some special fields. For example, in the fields of semiconductor extreme ultraviolet lithography technology and high-resolution aerospace satellites, the expansion coefficient of quartz glass needs to meet the requirements of less than 5×10 -8 / °C, the expansion coefficient of high-purity quartz glass in the market is relatively high, which can no longer meet the needs of the high-end market

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  • Preparation method of quartz glass with low expansion coefficient and quartz glass
  • Preparation method of quartz glass with low expansion coefficient and quartz glass
  • Preparation method of quartz glass with low expansion coefficient and quartz glass

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Embodiment 1

[0041] Such as figure 1 As shown, an embodiment of the present invention proposes a method for preparing quartz glass with a low expansion coefficient, which is used to prepare a titanium-doped silica loose body into a finished quartz glass product in the sintering space, wherein the titanium-doped silica There are pores in the silicon loose body;

[0042] Specifically, the titanium-doped silica soot body is made of titanium-containing compounds and silicon-containing compounds, which are reacted in a combustion flame at 500-1200°C to form titanium-doped silica particles, which are finally deposited to form Titanium-doped silica soot.

[0043] Specifically, both the titanium-containing compound and the silicon-containing compound need to be gasified into steam, and the two steams are mixed and passed into the same burner to participate in the reaction or separately passed into different burners to participate in the reaction.

[0044] Specifically, the titanium-containing comp...

Embodiment 2

[0076] Embodiment 2 of the present invention provides a sintering device for preparing quartz glass, which is used for sintering a soot silica body to obtain a finished quartz glass product, wherein the soot silica body has pores; the soot silica body has a diameter of Can be more than 300mm; such as φ350mm, φ550mm, φ750mm, φ850mm, φ950mm.

[0077] The silicon dioxide loose body can be synthesized from silicon-containing raw materials through low-temperature chemical vapor deposition. The silicon dioxide loose body is a high-purity silicon dioxide loose body, and the silicon dioxide in the high-purity silicon dioxide loose body is The content is above 99.99%. Or the silica soot body is a doped silica soot body, and the doping elements are boron (B), aluminum (Al), fluorine (F), iron (Fe), titanium (Ti), cerium (Ce), At least one of calcium (Ca), magnesium (Mg), sodium (Na), potassium (K), barium (Ba), yttrium (Y), lanthanum (La), zirconium (Zr), and germanium (Ge).

[0078] ...

Embodiment 3

[0108] Such as Figure 5 As shown, a system for preparing quartz glass provided by Embodiment 3 of the present invention includes:

[0109] A low-temperature chemical vapor deposition device (not shown in the figure) is used for synthesizing silicon-containing raw materials through low-temperature chemical vapor deposition to obtain a silicon dioxide loose body, and the silicon dioxide loose body is a high-purity silicon dioxide loose body or a doped silicon dioxide Heterosilica soot body, wherein the content of silicon dioxide in the high-purity silica soot body is above 99.99%;

[0110] A sintering device 100 for preparing quartz glass, the sintering device for preparing quartz glass includes:

[0111] a furnace body, the furnace body has a sintering space for accommodating the silica loose body;

[0112] The furnace body also has a heater for heating the sintering space;

[0113] The furnace body is also equipped with a vacuum passage connecting the sintering space, whic...

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Abstract

The invention relates to a preparation method of quartz glass with a low expansion coefficient and the quartz glass, relates to the field of preparation of the quartz glass, and mainly aims to prepare the quartz glass with the lower expansion coefficient in order to solve the problem that optical performance is unstable and the quartz glass cannot be applied to the fields of spaceflight, extreme ultra-violet lithography and the like due to the fact that titanium ion valence state of the low-expansion quartz glass cannot be controlled currently. The method comprises steps as follows: oxidizing atmosphere airflow is introduced into sintering space, the sintering space is enabled to be in an oxidation environment, and titanium doped silica loosing body is sintered; transparent quartz glass prepared after sintering is cooled, and then a finished quartz glass product is obtained. During sintering, Ti<4+> can be prevented from being converted into Ti<3+> in an oxidation environment, Ti<3+> is promoted to be converted into Ti<4+>, and the titanium doped quartz glass with more Ti<4+> and fewer Ti<3+> ions can guarantee better optical performance such as spectrum transmittance and the like while the lower expansion coefficient of the quartz glass is guaranteed.

Description

technical field [0001] The invention relates to the field of quartz glass preparation, in particular to a method for preparing quartz glass with a low expansion coefficient and the quartz glass. Background technique [0002] At present, the preparation process of quartz glass is mainly divided into direct method and indirect method. In the direct method, quartz glass is made of crystal, silica, and silicon-containing compounds as raw materials, which are melted at high temperature or chemical vapor deposition. Melting methods include electric melting, gas refining, chemical vapor deposition CVD and plasma chemical vapor deposition PCVD. In the indirect method preparation process, the glass intermediate is synthesized by low-temperature chemical vapor deposition with silicon-containing raw materials, that is, the silicon dioxide loose body, and then the glass intermediate is directly sintered by zone melting under normal pressure, that is, the silicon dioxide The silicon loo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03B8/04
CPCC03B19/1453
Inventor 聂兰舰向在奎饶传东王蕾刘飞翔邵竹锋王慧王宏杰贾亚男符博张辰阳王玉芬
Owner CHINA BUILDING MATERIALS ACAD
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