A chemical method for synthesizing copper-zinc iodide ternary wide bandgap compound semiconductor thin film materials
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XUCHANG UNIV
- Publication Date
- 2019-02-05
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Abstract
Description
Technical field:
[0001] The invention belongs to the technical field of material chemistry, and in particular relates to a chemical method for synthesizing copper-zinc iodide ternary wide bandgap compound semiconductor film materials. Background technique:
[0002] Wide bandgap semiconductors are generally semiconductor materials with a bandgap greater than 2.0eV at room temperature, so they can transmit most of the sunlight and are widely used in the vicinity of optoelectronic devices. In recent years, new solar cells using low-cost and high-efficiency lead halide perovskite materials as light-absorbing layers have developed rapidly, and their photoelectric conversion efficiency has exceeded 20%, which is expected to be applied in solar energy utilization. However, based on lead halide perovskite solar cell devices, it is necessary to use expensive wide bandgap organic compounds (Sprio-MEOTAD, P3HT, etc.) as hole transport layer materials, and the price of these organic com...