Semiconductor structure and formation method thereof

Abstract

The invention discloses a semiconductor structure and a formation method thereof. The formation method of the semiconductor structure comprises the following steps: forming semiconductor layers at sidewalls and top surfaces which are exposed out of fin portions, wherein the semiconductor layers are doped with P-type ions; doping threshold-voltage adjustment ions in the fin portions; and doping the P-type ions in the semiconductor layers, and performing an annealing process after the threshold-voltage adjustment ions are doped in the fin portions. When a P-type fin field effect transistor is formed through the formed semiconductor structure, the negative bias temperature instability of the P-type fin field effect transistor is inhibited, and the performance is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase of component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter. The ability of traditional planar transistors to control channel current Weakened, resulting in short channel effect, resulting in leakage current, and ultimately affecting the electrical performance of semiconductor devices. [0003] In order to overcome the short-channel effect of the transistor and suppress the leakage current, a Fin Field Effect Transistor (Fin FET) is pr...

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Problems solved by technology

[0004] However, existing FinFETs, especia

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