Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gas-sensitive material for detecting formaldehyde gas and preparation method

A gas-sensitive material and formaldehyde gas technology, applied in analytical materials, measuring devices, instruments, etc., can solve the problems of gas-sensitive material sensitivity, poor selectivity and stability, and achieve low cost, good stability, and high sensitivity. Effect

Active Publication Date: 2017-03-15
UNIV OF SHANGHAI FOR SCI & TECH
View PDF5 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the above-mentioned technical problems in the prior art, the present invention provides a gas-sensitive material, an element and a preparation method for detecting formaldehyde gas, the gas-sensitive material, an element and a preparation method for detecting formaldehyde gas To solve the technical problems of poor sensitivity, selectivity and stability of gas-sensitive materials for detecting formaldehyde gas in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gas-sensitive material for detecting formaldehyde gas and preparation method
  • Gas-sensitive material for detecting formaldehyde gas and preparation method
  • Gas-sensitive material for detecting formaldehyde gas and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Manufacturing steps of formaldehyde gas sensor:

[0050] a. with SnCl 2 2H 2 O as raw material, take 1.4 g SnCl 2 2H 2 O was dissolved in a beaker containing 5 mL of DMF, added a magnet, placed on a magnetic stirrer, and stirred for 2 h to make the solution transparent. Dissolve 0.6 g of PVP in another beaker containing 4 ml of ethanol, add a magnet, place it on a magnetic stirrer, and stir for 2 h to make it transparent. After the two beakers have been stirred, mix and stir for another 12 h . When complete, collect into a 10 mL syringe for use.

[0051] b. The prepared syringe was put into the electrospinning machine, and the relevant parameters were set as follows: the temperature inside the spinning machine was 40 °C, the relative humidity was 20%, the voltage between the polar plate and the needle tip was 20 kV, and the distance between the polar plate and the needle tip was 20 cm. After spinning, the collected samples were calcined at a heating rate of 2 °C / ...

Embodiment 2

[0057] Embodiment 2: the present embodiment is substantially the same as embodiment 1, and difference is: the massfraction of graphene oxide is 0.5% in the d step.

Embodiment 3

[0058] Embodiment 3: the present embodiment is substantially the same as example 1, and difference is: the massfraction of graphene oxide is 2% in d step.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a gas-sensitive material for detecting formaldehyde gas. The gas-sensitive material is prepared by compounding hollow tin oxide nano-fibers and graphene oxide. The graphene oxide accounts for 0.5-5% of the gas-sensitive material by mass, and the balance is the hollow tin oxide nano-fibers. The invention further provides a gas-sensitive element. The gas-sensitive element comprises a semiconductor element, and the surface of the semiconductor element is evenly coated with the gas-sensitive material. The invention further provides a preparation method of the gas-sensitive material. The hollow tin oxide nano-fibers are firstly prepared through an electrostatic spinning method, a graphene oxide solution is prepared, an equivalent-volume impregnation method is adopted, the prepared graphene oxide solution and the prepared hollow tin oxide nano-fibers are mixed, absolute ethyl alcohol is added, and the materials are ground to obtain pulp, namely, the gas-sensitive material. The semiconductor element is coated with the pulp, and the gas-sensitive element is prepared. The prepared gas-sensitive element has the advantages of high sensitivity to the formaldehyde gas, good selectivity to interfering gas, good stability and low working temperature, and can be used for indoor and outdoor formaldehyde concentration detection.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, and relates to a metal oxide semiconductor gas-sensitive material, in particular to a gas-sensitive material, an element and a preparation method for detecting formaldehyde gas. Background technique [0002] Formaldehyde gas is a kind of protoplasmic poison, which has the characteristics of long-term, latent and concealed harm to human health. Exposure to a certain concentration of formaldehyde can cause gastrointestinal corrosion, stomatitis and esophageal inflammation. 0.1 ppm formaldehyde can cause throat and nose allergies. Even ppb levels can cause harm to human health. Repeated exposure to formaldehyde is very It is easy to cause nose and throat cancer. The Occupational Safety and Health Administration (OSHA) stipulates that the limit concentration of formaldehyde that can be exposed is 150 ppb; the limit concentration that is harmful to health is 20 ppm. Formaldehyde and benzene pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N33/00
CPCG01N33/00G01N33/0003
Inventor 王丁张明璐王现英杨俊和司千里
Owner UNIV OF SHANGHAI FOR SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products