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Etching paste and etching method

A technology for etching slurry and etchant, applied in the field of etching, can solve the problems of easy damage to battery substrate materials, difficult to etch patterns, complicated operation process, etc., to facilitate large-scale industrial application and improve battery Efficiency, the effect of reducing complexity

Active Publication Date: 2017-03-22
ZHEJIANG JINKO SOLAR CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Among the above three etching methods, laser etching is costly and easily damages the battery substrate material, thereby affecting the subsequent use of the substrate. Moreover, it is difficult to etch a line width below 20 microns with the existing laser etching technology. pattern; photolithography technology needs to use wet etching technology, the operation process is very complicated, and the photoresist is easy to be damaged during the etching process, so it is difficult to obtain a complete pattern; and the screen etching has low cost and little damage, and has become a However, the existing etching slurry mainly includes etchant and solvent, which has poor comprehensive performance and is easy to diffuse. When the line width is below 30 microns, it is difficult to etch a complete pattern. Only pattern etching with a line width of 30 microns or more can be performed

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  • Etching paste and etching method
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  • Etching paste and etching method

Examples

Experimental program
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Effect test

Embodiment 1

[0054] 50% SU-8 photoresist, 10% hydrofluoric acid and nitric acid mixture (the mass ratio of hydrofluoric acid and nitric acid is 1:4), 10% carboxymethyl cellulose resin, 25% Pine oil, 3% dioctyl phthalate and 2% BASF light stabilizer Tinuvin 328 were evenly mixed to obtain an etching slurry with a viscosity of 30000 MPa·S. Take a silicon nitride battery sheet containing a dielectric film obtained after texturing, pre-cleaning, diffusion, post-cleaning, SiNx deposition, and sintering as a substrate, and apply the above-mentioned etching slurry evenly on the dielectric film of the substrate, Form an etching slurry layer; use a photomask to expose the etching slurry layer, and then use a developer to dissolve and remove the etching slurry in the unexposed area of ​​the etching slurry layer, forming a patterned pattern on the battery substrate. Etching slurry layer: activate the patterned etching slurry layer at 100°C to etch the dielectric film of the substrate, and then remove...

Embodiment 2

[0056] The mixture of 40% SU-8 photoresist and XV750 photoresist (the mass ratio of SU-8 photoresist: XV750 photoresist is 1:1), the mixed solution of 20% hydrofluoric acid and nitric acid ( The mass ratio of hydrofluoric acid to nitric acid is 1:4), 10% cellulose acetate butyrate, 20% pine oil, 4% dioctyl phthalate and 6% BASF light stabilizer Tinuvin 328 Uniformly, an etching slurry with a viscosity of 25000MPa·S was obtained. Take a silicon nitride battery sheet containing a dielectric film obtained after texturing, pre-cleaning, diffusion, post-cleaning, SiNx deposition, and sintering as a substrate, and apply the above-mentioned etching slurry evenly on the dielectric film of the substrate, Form an etching slurry layer; use a photomask to expose the etching slurry layer, and then use a developer to dissolve and remove the etching slurry in the unexposed area of ​​the etching slurry layer, forming a patterned pattern on the battery substrate. Etching the slurry layer; hea...

Embodiment 3

[0058] A mixture of 50% SU-8 photoresist and polymethyl methacrylate (the mass ratio of polymethyl methacrylate:SU-8 photoresist is 1:20), 10% hydrofluoric acid and nitric acid The mixture (the mass ratio of hydrofluoric acid and nitric acid is 1:4), 10% carboxymethyl cellulose resin, 25% pine oil, 3% dioctyl phthalate and 2% BASF light The stabilizer Tinuvin 328 was mixed evenly to obtain an etching slurry with a viscosity of 30000MPa·S. Take a silicon nitride battery sheet containing a dielectric film obtained after texturing, pre-cleaning, diffusion, post-cleaning, SiNx deposition, and sintering as a substrate, and apply the above-mentioned etching slurry evenly on the dielectric film of the substrate, Form an etching slurry layer; use a photomask to expose the etching slurry layer, and then use a developer to dissolve and remove the etching slurry in the unexposed area of ​​the etching slurry layer, forming a patterned pattern on the battery substrate. Etching slurry laye...

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Abstract

The invention provides etching paste, which comprises the following raw materials in percentage by weight: 30%-60% of an organic polymer, 5%-30% of an etching agent, 5%-20% of an organic binder, 10%-30% of an organic solvent and 5%-10% of an assistant, wherein the organic polymer is one of more of polymethyl methacrylate, polymethylglutarimide and a photoresist; and the etching agent is an acid etching agent or an alkaline etching agent. By adopting the etching paste, small line-width patterns of which the line widths are smaller than 20 microns can be etched, and improvement of the battery efficiency is facilitated. The invention further provides an etching method. The etching method provided by the invention is simple and feasible in operation; the complexity of an etching technology is reduced while the small line-width patterns are prepared; and large-scale industrial application is facilitated.

Description

technical field [0001] The invention relates to the technical field of etching, in particular to an etching slurry and an etching method. Background technique [0002] Etching is an important step in the production of solar cells. It refers to etching a certain pattern on the dielectric film in the solar cell to make the surface of the cell patterned or textured, which is convenient for preparing electrode grid lines, so that the solar cell It has the function of collecting and transporting electrons; reducing the line width of the etched pattern can increase the aspect ratio of the electrode grid line, thereby improving the ability of the battery to collect and transport electrons. At the same time, reducing the line width can also effectively reduce the shading on the surface of the cell area, thereby improving the conversion efficiency of the battery. Therefore, reducing the line width of the etched pattern has been the focus of extensive attention in the industry. [0...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/22H01L31/18H01L21/311
CPCH01B1/22H01L21/311H01L21/31133H01L31/18Y02P70/50
Inventor 福克斯·斯蒂芬吴慧敏金浩张昕宇刘明郝彦磊揭晓东
Owner ZHEJIANG JINKO SOLAR CO LTD