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Silicon-based microshell resonator and production method thereof

A resonator and housing technology, applied in the field of micro-electromechanical systems, can solve the problems of inconsistent electrode and resonator area, uneven capacitance, easy to generate errors, etc., to reduce energy loss through the pillars and reduce surface roughness Degree, reduce the effect of surface loss

Active Publication Date: 2017-04-05
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to realize the high-performance micro-shell resonant gyroscope, Southeast University has patented "a two-piece integrated silicon-based ultra-thin micro-hemispherical resonant gyroscope and its preparation method" (patent number: ZL2013101769365) and "a three-piece assembled resonant gyroscope" in China. Silicon-based ultra-thin micro-hemispherical resonant gyroscope and its preparation method" (Patent No.: ZL2013101770080) proposed the use of SF 6 The hemispherical cavity is prepared by isotropic dry etching, but the surface roughness of the cavity prepared by this dry etching process is very high, and errors are prone to occur during the assembly process of the electrode and the resonator, and the distance between the electrode and the resonator Capacitance is relatively small
Northwestern Polytechnical University proposed in the Chinese patent "Miniature Hemispherical Resonant Gyroscope and Its Preparation Method" (patent number: ZL 2013100221461) to prepare a hemispherical cavity by isotropic dry etching. The surface roughness of the cavity prepared by this process is also very high. High, affecting the surface roughness of the subsequently deposited polysilicon resonator, resulting in large surface loss, and the capacitance between the prepared electrode and the resonator is relatively small
Northrop Grumman of the United States proposed in the United States patent "MICRO HEMISPHERIC RESONATOR GYRO" (patent number: US8109145) to deposit low-stress silicon nitride by plasma-enhanced chemical vapor deposition (PECVD) to prepare micro-hemispherical resonators. The situation is that the stress of silicon nitride deposited by PECVD silicon nitride or other deposition methods is large, especially for the preparation of 3mm diameter silicon nitride micro-hemispherical resonators. It is very easy to break; (DRIE), this process easily leads to inconsistent areas between each electrode and the resonator, resulting in uneven capacitance

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  • Silicon-based microshell resonator and production method thereof
  • Silicon-based microshell resonator and production method thereof
  • Silicon-based microshell resonator and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] like Figure 1-Figure 4d As shown, a silicon-based microshell resonator 100 provided in this example includes:

[0062] A microshell resonator 120;

[0063] A substrate 110 with a plurality of drive detection electrodes 140;

[0064] Wherein, the micro-shell resonator 120 is composed of a shell part 122, a flat shell part 124 and a pillar 126, the shell part 122 is connected with the flat shell part 124, and the shell part 122 is located around the flat shell part 124, forming A bowl-shaped column 126 is located at the bottom of the flat shell part 124; the base 110 is composed of two layers of highly conductive silicon substrates, and there is an oxide layer 150 in the middle of the two layers of highly conductive silicon substrates, which plays the role of electrical isolation, and the upper layer is highly conductive There are a plurality of drive detection electrodes 140 formed by doping in the silicon substrate 130; the number of the drive detection electrodes 14...

Embodiment 2

[0087] like Figure 1-Figure 4d As shown, a silicon-based microshell resonator 100 provided in this example includes:

[0088] A microshell resonator 120;

[0089] A substrate 110 with a plurality of drive detection electrodes 140;

[0090] Wherein, the micro-shell resonator 120 is composed of a shell part 122, a flat shell part 124 and a pillar 126. The shell part 122 is connected to the flat shell part 124, and the shell part 122 is located around the flat shell part 124, forming a Bowl-shaped, pillars 126 are located at the bottom of the flat shell part 124; the base 110 is composed of two layers of highly conductive silicon substrates, an oxide layer 150 is electrically isolated between the two layers of highly conductive silicon substrates, and the upper layer of highly conductive silicon substrates There are a plurality of drive detection electrodes 140 formed by doping in 130; the number of drive detection electrodes 140 is a multiple of 4, including an even number of...

Embodiment 3

[0112] like figure 1 -As shown in Fig. 4, a kind of silicon-based microshell resonator 100 provided by this example comprises:

[0113] A microshell resonator 120;

[0114] A substrate 110 with a plurality of drive detection electrodes 140;

[0115] Wherein, the micro-shell resonator 120 is composed of a shell part 122, a flat shell part 124 and a pillar 126, the shell part 122 is connected with the flat shell part 124, and the shell part 122 is located around the flat shell part 124, forming A bowl-shaped column 126 is located at the bottom of the flat shell part 124; the base 110 is composed of two layers of highly conductive silicon substrates, an oxide layer 150 is placed between the two layers of highly conductive silicon substrates for electrical isolation, and the upper layer of highly conductive silicon lining There are a plurality of driving detection electrodes 140 formed by doping in the bottom 130; the number of the driving detection electrodes 140 is a multiple ...

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Abstract

The invention discloses a silicon-based microshell resonator and a production method thereof. The silicon-based microshell resonator includes a microshell harmonic oscillator and a substrate having a plurality of driving detection electrodes; the microshell harmonic oscillator is formed by a shell part, a flat plate shell part and a pillar; the flat plate part of the microshell harmonic oscillator, close to the pillar, is provided with grooves; the substrate is formed by two layers of highly conductive silicon substrates, the two layers of highly conductive silicon substrates are electrically isolated by an oxidation layer, and the plurality of driving detection electrodes formed through doping are arranged in the upper highly conductive silicon substrate; the number of the driving detection electrodes is a multiple of 4, and the driving detection electrodes include an even number of driving electrodes and an even number of detection electrodes; and the microshell harmonic oscillator is electrically connected with the lower highly conductive silicon substrate through the pillar. The diameter dimension of the microshell harmonic oscillator is 100 [mu]m to 4 mm. The silicon-based microshell resonator reduces the surface loss of the harmonic oscillator and improves the Q value of the harmonic oscillator.

Description

technical field [0001] The invention relates to a three-dimensional micro-shell resonator in the field of micro-electromechanical systems (MEMS), in particular to a silicon-based micro-shell resonator and a preparation method thereof. Background technique [0002] Compared with optical gyroscopes (such as ring laser gyroscopes and fiber optic gyroscopes), Gothic vibrating gyroscopes are simpler in structure and have certain advantages in miniaturization. According to the structure, Gothic vibrating top can be divided into vibrating beam type, tuning fork type, shell type, vibrating plate type, etc. Its core components can be processed by traditional macroscopic machinery or MEMS technology. According to the structure, the shell resonant gyroscope can be divided into hemisphere, ring, cylinder and other shell forms. Among them, the hemispherical resonant gyroscope is the most successful high-performance gyroscope among Gothic vibrating gyroscopes, and has been successfully us...

Claims

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Application Information

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IPC IPC(8): G01C19/5691B81B7/02
CPCB81B7/02G01C19/5691
Inventor 尚金堂罗斌张瑾
Owner SOUTHEAST UNIV
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