Cathode material used for PETE device

Abstract

The invention relates to a cathode material used for a PETE device and belongs to the technical field of photoelectric thermoelectric power generation. The cathode material used for the PETE device is a binary solid solution compound formed by silicon and germanium, and the molecular formula of the semiconductor compound is Si<x>Ge<1-X>, wherein x equals 5-30%; the compound is doped with an element boron (B), and the doping proportion is 0.02-0.08mol%; a nanostructure is generated in two manners: one manner is that boron nitride (BN) or carbon 60 (C60) nanoparticles are added to alloy powder, and the adding weight proportion is 0.2-0.5wt%; the other manner is that aluminum nanoparticles are added to the alloy powder to serves as a pore-forming agent, the adding proportion is 1-5vol%, then a sintered material is sliced into thin sheets which are 2-5 mm in thickness, and the sheets are placed in nitric acid at the temperature of 80-120 DEG C with the mass concentration being 40%-80% to be corroded. By means of the cathode material, the scattering center of the material can be effectively increased, the electron emissivity of the cathode material can be remarkably improved, it is beneficial for the cathode to absorb sunlight, the effect is obvious, and the application range is wide.

Description

technical field [0001] The invention belongs to the technical field of photoelectric thermoelectric power generation, and in particular relates to a cathode material for PETE devices. Background technique [0002] PETE devices are also called photon-enhanced thermionic emission devices, which can use light and heat to generate electricity at the same time. very few). The structure of the device is similar to that of the thermionic emission device, both of which are vacuum flat plates with two electrodes, the cathode and the anode, and the difference is that the cathode is a P-type semiconductor. The power generation principle of this device is: the cathode absorbs photons, and the electrons transition from the valence band to the conduction band through thermal excitation; the electrons diffuse to the cathode surface, overcome the potential barrier and emit into the vacuum; the anode collects charges to form a current. [0003] According to the working principle of the PET...

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Problems solved by technology

[0004] At present, the published technical literature reports that most of the cathode materials used in current PETE device research are homogeneous P-type semiconductor materials, which have technical problems such as low electron emission rate and weak sunlight absorption ability.

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