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A two-dimensional channel structure and its preparation method

A channel structure and channel technology, applied in the direction of microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems such as difficult to fine-tune the spacing between layers, large fluctuation deviation, and difficult positive surface charge

Active Publication Date: 2019-01-15
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the limitations of materials and preparation processes, the exfoliation-reconstruction method is only suitable for natural layered materials, and the spacing between layers is difficult to fine-tune, even if chemical surface modification is used.
Although the capillary-tight compression method can effectively control the average spacing of two-dimensional channels, the fluctuation deviation is large, and it is impossible to accurately study the influence of different interlayer spacings in a single two-dimensional channel on ion transport, electrolyte, gas transport, etc. , and only natural layered materials can be used
At the same time, it is difficult to finely control the surface charge density of natural layered materials by doping and other methods. The surface charge density control of existing methods can only be completed through subsequent surface processing, and it is difficult to achieve positive surface charge.

Method used

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  • A two-dimensional channel structure and its preparation method
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  • A two-dimensional channel structure and its preparation method

Examples

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Embodiment 1

[0061] In this embodiment, a two-layer rectangular two-dimensional channel structure is prepared, and the layer structure of a single-layer two-dimensional channel is a long rectangle of 800nm*600nm, with a thickness of 10nm and a size of 800nm*10nm at both ends of the opening. Take Al 2 o 3 As the substrate, the isolation layer AlN and the sacrificial layer GaN are grown by the MBE method. The growth process is carried out in an ultra-high vacuum growth chamber. The high-purity (7N) metal source is generated by a K-Cell source furnace, and the nitrogen source is a radio frequency plasma nitrogen source. , the growth process was monitored in situ by reflection high-energy electron diffractometer RHEED, and SiO was prepared by chemical vapor deposition CVD 2 The scaffolds were etched using photolithography.

[0062] The preparation method of the two-dimensional channel structure of this embodiment includes the following steps:

[0063] 1) Provide Al 2 o 3 As the substrate ...

Embodiment 2

[0073] In this embodiment, a two-layer two-dimensional channel structure is prepared, the shape of the channel in each layer is a trident shape, and the layer structure of the two-dimensional channel is Image 6 shown. The growth steps are basically the same as in Embodiment 1, the difference is that in step 4) only the pattern is kept, and the rest are etched away. After this step, the two-dimensional channel template is as follows: Figure 7 Shown; Step 6) Only engrave the middle engraved port Figure 8 Groove 31 in, etch to Al 2 o 3 layer, after this step the two-dimensional channel template such as Figure 8 shown.

[0074] In addition to the advantages of Embodiment 1, the double-layer three-fork two-dimensional channel structure prepared by the above method is characterized in that fluid can be injected from two inlets and flow out from the third channel outlet. This design can be used to realize the synthesis of biopharmaceuticals, two channels are raw material inl...

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Abstract

The invention discloses a two-dimensional channel structure and a manufacture method thereof. A support is used for supporting separation layers to obtain multiple kinds of two-dimensional channel structures. The range of applicable materials is broad. The spacing distance of all layers is precise and controllable. Constraints on design of the two-dimensional channel structure are few so that a great number of patterns are suitable for the two-dimensional channel structure. The two-dimensional channel structure is suitable for industrialized production, with high-precision images being produced. As a result, the two-dimensional channel structure is suitable for multiple kinds of industrial production methods. The manufacture method is easy and low in cost and extensive in applications. Due to few technological constraints, the two-dimensional channel structure is suitable for multiple techniques. Circuits can be designed on the separation layers. Through an external power supply or an electric signal or a light source or modulation of different entrance pressure intensities, ion or molecule directions can be controlled so that purposes of energy conversion or drug synthesis are fulfilled. The patterns are combined with proper detection means (such as Raman spectroscopy, fluorescence spectra and the like) so that single molecules can be effectively detected or other biological detection and chemical detection can be carried out. The patterns can be combined with a large number of systems.

Description

technical field [0001] The invention relates to semiconductor preparation technology, in particular to a two-dimensional channel structure and a preparation method thereof. Background technique [0002] Two-dimensional materials such as graphene, transition metal chalcogenides (such as MoS 2 etc.) and the III-V quantum well structure can effectively confine the electrons in it and thus have many applications. The analogy to the hollow two-dimensional structure can form a good confinement of ions, electrolytes, organic molecules, etc., and can effectively control their transport. At the same time, the hollow two-dimensional layered structure has a large surface area and can be used for various applications such as gas adsorption, particle adsorption, chemical synthesis, batteries, and capacitors. Most of the two-dimensional layered structures today are prepared by using two-dimensional layered materials as the isolation layer, and the stripping-reconstruction method is adop...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/00B81C1/00H01L21/02H01L23/13
Inventor 袁竹君王新强王平盛博文李沫张健沈波
Owner PEKING UNIV
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