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Semiconductor device, preparation method thereof and electronic device

A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve the problems of reduced device performance and weak Si-O

Active Publication Date: 2017-04-26
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the Si-O formed by oxidation is very weak, and it is easy to cause decomposition under high temperature and low nitrogen environment, which reduces the performance of the device.

Method used

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  • Semiconductor device, preparation method thereof and electronic device
  • Semiconductor device, preparation method thereof and electronic device
  • Semiconductor device, preparation method thereof and electronic device

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0043]In order to solve the problems in the prior art, the present invention provides a new method for manufacturing a semiconductor device. The method of the present invention will be further described below in conjunction with the accompanying drawings.

[0044] in, Figures 1a-1n It is a schematic diagram of the manufacturing process of the semiconductor device described in a specific implementation of the present invention.

[0045] First, step 101 is performed to provide a semiconductor substrate on which several fins and a dummy gate oxide layer surrounding the fins and a dummy gate are formed, and a plurality of fins are formed on the semiconductor substrate. There is an interlayer dielectric layer filling gaps between adjacent dummy gates.

[0046] Specifically, the method includes the following steps:

[0047] Step 1011: providing a semiconductor substrate 101 and performing ion implantation to form wells.

[0048] Specifically, such as Figure 1a As shown, in this...

Embodiment 2

[0128] The present invention also provides a semiconductor device, which is prepared by the method described in the first embodiment.

[0129] The semiconductor device includes a semiconductor substrate 101, and the semiconductor substrate may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), germanium-on-insulator Silicon (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc. In this embodiment, silicon is selected as the semiconductor substrate 101 .

[0130] Wherein the semiconductor substrate includes an NMOS region and a PMOS region, so as to form NMOS devices and PMOS devices in subsequent steps.

[0131] A plurality of fins are formed on the semiconductor substrate, and the fins all have the same width, or the fins are divided into a plurality of fin groups having different widths.

[0132] The semiconductor device further includes a metal gate structure disposed aro...

Embodiment 3

[0144] The present invention also provides an electronic device, including the semiconductor device described in the second embodiment. Wherein, the semiconductor device is the semiconductor device described in the second embodiment, or the semiconductor device obtained according to the preparation method described in the first embodiment.

[0145] The electronic device of this embodiment can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV set, VCD, DVD, navigator, camera, video recorder, voice recorder, MP3, MP4, PSP, etc. , can also be any intermediate product including the semiconductor device. The electronic device according to the embodiment of the present invention has better performance due to the use of the above-mentioned semiconductor device.

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PUM

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Abstract

The invention relates to a semiconductor device, a preparation method thereof and an electronic device. The method comprises the steps that S1) a semiconductor substrate is provided, fins and virtual grid oxide layers and virtual grids surrounding the fins are formed on the semiconductor substrate, and interlayer dielectric layers which fill gaps between the adjacent virtual grids are also formed on the semiconductor substrate; S2) the virtual grids and the virtual grid oxide layers are removed to form virtual openings and expose the semiconductor substrate; S3) the exposed semiconductor substrate is oxidized chemically to form an interface layer; S4) a high k dielectric layer and a coverage layer are formed on the interlayer dielectric layers, the surface of the virtual openings and the interface layer; S5) low-temperature annealing is carried out in the oxygen-containing atmosphere to carry out passivation on oxygen vacancies in the interface layer; S6) a barrier layer is formed on the coverage layer; and S7) a high-temperature annealing technology is executed to make the interface layer compact.

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular, the present invention relates to a semiconductor device, a preparation method thereof, and an electronic device. Background technique [0002] The improvement of integrated circuit performance is mainly achieved by continuously shrinking the size of integrated circuit devices to increase its speed. Currently, as the semiconductor industry has advanced to nanotechnology process nodes, especially as semiconductor device dimensions drop to 22nm or below, manufacturing and design challenges have led to the development of three-dimensional designs such as Fin Field Effect Transistors (FinFETs). [0003] Compared with the existing planar transistors, the FinFET device has more superior performance in terms of channel control and reducing shallow channel effects; the planar gate structure is arranged above the channel, and the gate in the FinFET The fins are arranged around the fins...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L21/324
CPCH01L29/66795H01L29/785H01L21/324
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP
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