Method for preparing polycrystalline ultra-thin metal film and two-dimensional nano pattern

An ultra-thin metal, two-dimensional nanotechnology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc. Long cycle and other problems, to achieve the effect of easy large-scale manufacturing, low cost, and large transmission loss

Active Publication Date: 2017-04-26
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This kind of process not only has high cost, complex process, long production cycle, and low yield; moreover, the processed film has an amorphous structure and has a large loss
The two-dimensional nanoplate structure synthesized by chemical methods can only reach a maximum of 200 microns, so it is impossible to form a large-area uniform film; and the nanoplate with a size of more than 10 microns is generally more than 200 nanometers in thickness, and it is difficult to prepare a thickness less than 20 nanometers ultra-thin continuous film of

Method used

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  • Method for preparing polycrystalline ultra-thin metal film and two-dimensional nano pattern
  • Method for preparing polycrystalline ultra-thin metal film and two-dimensional nano pattern
  • Method for preparing polycrystalline ultra-thin metal film and two-dimensional nano pattern

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Embodiment

[0036] Step 1: Polymer mask preparation process

[0037] Spin-coat the UV-sensitive polymer on the silicon wafer, and transfer the two-dimensional pattern array on the mask plate to the UV-sensitive polymer after ultraviolet exposure and development, so as to obtain a polymer mask corresponding to the two-dimensional pattern array;

[0038] Step 2: Self-assembly process of monodisperse silver nanoplates

[0039] A high-yield silver nanoplate solution was obtained by using the seed crystal method; 10 mL of high-yield silver nanoplate solution was centrifuged twice at 8000 rpm; deionized water was added to a solution volume of 10 mL, and the concentration of the silver element was prepared to be 1 mmol / L The initial solution; Add 1mL of polyvinylpyrrolidone solution with a concentration of 50mmol / L and 500μL of ascorbic acid solution with a concentration of 100mmol / L to the initial solution in turn, stir fully to obtain a self-assembly solution; The silicon wafer was immersed i...

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Abstract

The invention relates to a method for preparing a polycrystalline ultra-thin metal film and two-dimensional nano pattern. The method comprises a step of preparing a two-dimensional array structure formed by units with special morphology by using UV photolithographic process, and forming a polymer mask, a step of realizing the dense self-assembly of a monodisperse silver nano plate at a substrate through an ascorbic acid AA modified high yield silver nano plate solution, a step of removing the polymer mask through a developer, and forming a patterned self-assembled silver nano plate array on the substrate, a step of removing a silver nano plate coating on the substrate through a physical or chemical method, and a step of forming a (quasi) continuous polycrystalline ultra-thin metal film and two-dimensional nano pattern through continued growth. According to the method, the large-scale preparation of special plane structure sub wavelength devices is realized, the key problem of large area metal thin film optoelectronic device application is solved, the loss of the device is reduced greatly, the performance of the device is improved, the preparation of an ultra-thin continued metal film with the minimum of 10 nm is realized, and the method is a breakthrough of existing preparation technology.

Description

technical field [0001] The invention relates to the fields of nanometer materials, thin film devices and waveguides, in particular to a preparation method of polycrystalline ultrathin metal films and two-dimensional nanographs. Background technique [0002] Two-dimensional metallic subwavelength optoelectronic devices with surface plasmon properties. Under the condition of light, the incident photons interact with the free electrons on the metal surface, and the field distribution is highly localized in the direction perpendicular to the interface, and the pattern spot formed is much smaller than the traditional dielectric waveguide, which breaks through the diffraction limit and can be Propagates in a direction parallel to the surface. Therefore, it can be fabricated into two-dimensional sub-wavelength optoelectronic devices, greatly reducing the size and facilitating integration. However, due to the large loss of the device material (usually metal), the signal attenuates...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48B82Y40/00B82Y30/00
CPCB82Y30/00B82Y40/00H10K30/451Y02E10/549
Inventor 张晓阳张彤周桓立
Owner SOUTHEAST UNIV
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