Formation method of semiconductor structure
A semiconductor and plasma technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems such as the performance of fin-type field effect transistors that needs to be further improved, and the large leakage current.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0032] The structure of the silicon-on-insulator substrate includes: a bottom silicon layer, a buried oxide layer on the surface of the bottom silicon layer, and a top silicon layer on the surface of the buried oxide layer. Forming a semiconductor device on an insulating silicon substrate can effectively reduce the leakage current of the semiconductor device and improve the performance of the semiconductor device.
[0033] Oxygen ions can be implanted into bulk silicon by ion implantation to form a buried oxide layer in bulk silicon, thereby forming a silicon-on-insulator structure, but the ion implanter used for ion implantation usually takes a long time to reach the required level for forming the buried oxide layer. required implant dose, resulting in low efficiency and high cost for forming silicon-on-insulator substrates. In the plasma implantation process, the implantation dose is relatively large, and the implantation dose has nothing to do with the implantation time and...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com