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Element-doped SiOx negative electrode composite material as well as preparation method and application thereof

A composite material and element doping technology, which is applied in the application field of high specific capacity lithium-ion battery anode materials, can solve problems such as difficult control of sintering temperature, and achieve good dispersion, excellent cycle performance, and excellent cycle performance.

Active Publication Date: 2017-05-10
BEIJING IAMETAL NEW ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is also a difficult problem to control the sintering temperature.

Method used

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  • Element-doped SiOx negative electrode composite material as well as preparation method and application thereof
  • Element-doped SiOx negative electrode composite material as well as preparation method and application thereof
  • Element-doped SiOx negative electrode composite material as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Disperse silicon oxide powder in ethanol and perform ball milling until the median particle size is 3 μm, then add phosphoric acid, the weight is 5% of the mass of silicon oxide, and further mix and grind to obtain a uniformly mixed slurry; The slurry was dried to obtain powder A, and powder A was sintered at 1200°C in an inert pure nitrogen atmosphere, the heating rate was 5°C / min, and sintered for 6h to obtain solid powder B. Mix powder B:artificial graphite=1:2 mass ratio, add PVP as a polymer additive, mix with a weight average molecular weight of 300,000, carry out ball milling under the condition of solvent dispersion and pulverize to a suitable particle size; the resulting slurry Drying treatment afforded C as a solid powder. Powder C is carbonized at high temperature in an inert pure nitrogen atmosphere to obtain phosphorus-doped SiO x Negative material.

[0035] element doped SiO x Characterization of anode materials:

[0036] The particle size and particle...

Embodiment 2

[0040] After dispersing the silica powder in ethanol, ball milling is carried out until the median particle size is 3 μm, then phosphorus pentoxide is added, the weight is 5% of the mass of silicon oxide, further mixed and crushed to obtain a uniformly mixed slurry; The obtained slurry was dried to obtain powder A, and powder A was sintered at 400°C in an inert pure nitrogen atmosphere at a heating rate of 5°C / min for 6h to obtain solid powder B. Mix powder B:artificial graphite=1:2 mass ratio, add PVP as a polymer additive, mix with a weight average molecular weight of 300,000, carry out ball milling under the condition of solvent dispersion and pulverize to a suitable particle size; the resulting slurry Drying treatment afforded C as a solid powder. Powder C is carbonized at high temperature in an inert pure nitrogen atmosphere to obtain SiO doped with element phosphorus x Negative material.

[0041] element doped SiO x The characterization of the negative electrode mater...

Embodiment 3

[0045] Disperse silicon oxide powder in ethanol and perform ball milling until the median particle size is 3 μm, then add boron oxide with a weight of 5% of the mass of silicon oxide, and further mix and grind to obtain a uniformly mixed slurry; The slurry was dried to obtain powder A, and powder A was sintered at 500°C in an inert pure nitrogen atmosphere at a heating rate of 5°C / min for 6h to obtain solid powder B. Mix powder B:artificial graphite=1:2 mass ratio, add PVP as a polymer additive, mix with a weight average molecular weight of 350,000, carry out ball milling and mixing under the condition of solvent dispersion and pulverize to a suitable particle size; the obtained slurry Drying treatment afforded C as a solid powder. Powder C is carbonized at high temperature in an inert pure nitrogen atmosphere to obtain boron-doped SiO x Negative material.

[0046] element doped SiO x The characterization of the negative electrode material is the same as in Example 1.

[0...

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Abstract

The invention provides an element-doped SiOx negative electrode composite material as well as a preparation method and application thereof. According to the element-doped SiOx negative electrode composite material, the content of SiOx is 30 percent to 80 percent, the content of carbon is 20 percent to 70 percent and the content of doping elements is 5 percent or lower; the average diameter of the composite material is 3mu.m to 25mu.m, (D90-D10) / D50 is more than or equal to 1.5 and smaller than or equal to 2 and the BET specific surface area is (8+ / -5)m<2>.g<-1>. The doping element is one or more of the following elements: boron, nitrogen, phosphorus, sulfur, lithium, sodium, potassium, magnesium, aluminum, zinc, copper and tin; preferably, the doping element is a combination of non-metal elements and metal elements, such as a combination of the boron and lithium, the boron and zinc, the boron and copper, the nitrogen and aluminum, the boron, aluminum and lithium, and the boron, copper and lithium, preferably, the combination of the boron, aluminum and lithium.

Description

technical field [0001] The invention relates to an element-doped SiO x Anode materials, especially involving element-doped SiO x Application of negative electrode materials as negative electrode materials for high specific capacity lithium ion batteries. [0002] Background technique: [0003] Lithium-ion batteries have outstanding advantages such as high specific energy, small self-discharge, long service life, green and pollution-free, and have been widely used in portable electronic products and electric vehicles. With the development and progress of society, the further application of lithium-ion batteries urgently needs to increase the energy density, and the development of electrode materials with high specific capacity is one of the effective ways. [0004] Among the negative electrode materials, carbon materials are mainly commercialized at present, and their theoretical specific capacity is low, about 372mAh g -1 . Silicon has a high theoretical specific capacity...

Claims

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Application Information

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IPC IPC(8): H01M4/36H01M4/48H01M4/62H01M10/0525
CPCH01M4/364H01M4/483H01M4/624H01M4/628H01M10/0525Y02E60/10
Inventor 郭玉国李金熠徐泉殷雅侠
Owner BEIJING IAMETAL NEW ENERGY TECH CO LTD
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