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Metal oxide modified qled device and preparation method thereof

An oxide and metal technology, applied in the field of metal oxide modified QLED devices and their preparation, can solve the problems of low efficiency, insufficient device stability, unbalanced carrier injection, etc., so as to facilitate injection and reduce injection barrier, improving the effect of injection balance

Active Publication Date: 2019-05-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a metal oxide modified QLED device and its preparation method, aiming to solve the problem of insufficient stability and low efficiency of the device caused by unbalanced carrier injection in the existing QLED device

Method used

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  • Metal oxide modified qled device and preparation method thereof
  • Metal oxide modified qled device and preparation method thereof

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preparation example Construction

[0042] And, an embodiment of the present invention also provides a method for preparing a metal oxide modified QLED device, which includes the following steps:

[0043] S01. Provide a substrate, and deposit a bottom electrode on the substrate;

[0044] S02. Using a vacuum deposition method, deposit a metal oxide doped with group IA elements, deposit a hole injection layer on the top electrode, and make the hole injection layer, the group IA element and the metal The molar ratio of metal atoms in the oxide is (0.01-0.15):1, and along the bottom electrode toward the quantum dot light-emitting layer, the doping ratio of the group IA element in the hole injection layer gradually decreases ;

[0045] S03. Depositing a hole transport layer and a quantum dot light-emitting layer sequentially on the hole injection layer;

[0046] S04. Using a vacuum deposition method, deposit a metal oxide doped with group IA elements, deposit an electron transport layer on the quantum dot light-emitting lay...

Embodiment 1

[0057] Combine figure 1 , A metal oxide modified QLED device, including a substrate, a bottom electrode ITO, a hole injection layer, a hole transport layer (HTL), a quantum dot light emitting layer (QDS), an electron transport layer and a top electrode stacked in sequence Al, the hole injection layer is Cs-doped molybdenum oxide, composed of 5 doped film layers, and is named the first doped film layer in turn along the direction from the bottom electrode to the quantum dot light-emitting layer (Marked as MoO x1 ), the second doped film layer (marked as MoO x2 ), the third doped film layer (marked as MoO x3 ), the fourth doped film layer (marked as MoO x4 ), the fifth doped film layer (marked as MoO x5 ), wherein, in the first doped film layer, the molar ratio of Cs atoms to molybdenum atoms in molybdenum oxide is 0.15:1, and the thickness is 2nm; in the second doped film layer, Cs atoms and molybdenum oxide The molar ratio of molybdenum atoms is 0.12:1, and the thickness is 2nm;...

Embodiment 2

[0066] Combine figure 2 , A metal oxide modified QLED device, including a substrate, a bottom electrode ITO, a hole injection layer, a hole transport layer (HTL), a quantum dot light emitting layer (QDS), an electron transport layer and a top electrode stacked in sequence Al, the hole injection layer is Li-doped vanadium oxide, composed of 5 doped film layers, and is named the first doped film layer in turn along the direction from the bottom electrode to the quantum dot light-emitting layer (Marked as VO x1 ), the second doped film layer (marked as VO x2 ), the third doped film layer (marked as VO x3 ), the fourth doped film layer (marked as VO x4 ), the fifth doped film layer (marked as VO x5 ), wherein, in the first doped film layer, the molar ratio of Li atoms to vanadium atoms in vanadium oxide is 0.15:1, and the thickness is 3nm; in the second doped film layer, Li atoms and vanadium oxide The molar ratio of vanadium atoms is 0.12:1, and the thickness is 3nm; in the third...

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Abstract

The present invention provides a metal oxide modified QLED device, including the substrate, base electrode, cave injection layer, cave transmission layer, quantum dot light layer, electronic transmission layer, and top electrode in turn, and the electron electrons.The acupoint injection layer and the electronic transmission layer are metal oxides doped by IA ethnic elements. Among them, in the cave injection layer, the atomic Moore of the IA ethnic element and the metal element in the metal oxide is (0.01‑0.15): 1; In the electronic transmission layer, the atoms of the IA ethnic element and the metal element in the metal oxide are (0.5‑0.8): 1, and the quantum of the bottom electrode to the submissive electrodeThe direction of the light layer, the proportion of the muddy of the IA ethnic element in the cave injection layer gradually decreases.

Description

Technical field [0001] The invention belongs to the technical field of flat panel displays, and particularly relates to a metal oxide modified QLED device and a preparation method thereof. Background technique [0002] Quantum dot (QD) is a kind of quasi-zero-dimensional (Quasi-zero-dimensional) nanomaterial, composed of a small number of atoms, which has high fluorescence efficiency, narrow emission spectrum, adjustable emission wavelength, high spectral purity, etc. With special advantages, it has the potential to replace traditional organic light-emitting bodies as the core part of next-generation light-emitting devices. Quantum dot-based light-emitting diodes are called Quantum dot light-emitting diodes (QLEDs), which have adjustable wavelength, high color purity, narrow emission spectrum, can be prepared by solution method, and can be used flexible The advantages of substrates have been extensively studied. However, the lack of stability of QLED itself limits its large-sca...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56H01L33/00H01L33/04
CPCH01L33/005H01L33/04H10K50/165H10K50/17H10K2102/00H10K71/00
Inventor 王宇曹蔚然杨一行钱磊
Owner TCL CORPORATION