PIN structure ultraviolet photoelectric detector and preparation method thereof

Abstract

The invention discloses a PIN structure ultraviolet photoelectric detector. The PIN structure ultraviolet photoelectric detector comprises a sapphire substrate, an AIN nucleation layer, an Alx1Gal-x1N buffer layer, an n-type Alx2Gal-x2N layer, a non-doped i-type ZnO / TiO2 superlattice absorption layer, a p-type Alx3Gal- x3N layer, and a p-type GaN layer. An n-type ohmic electrode is led out from the n-type Alx2Gal-x2N layer, and a p-type ohmic electrode is led out from the p-type GaN layer. In the non-doped i-type ZnO / TiO2 superlattice absorption layer, the repetition period of the superlattice is in a range from 1 to 10. The invention also discloses the preparation method of the PIN structure ultraviolet photoelectric detector. By using the PIN structure ultraviolet photoelectric detector, the responsivity of the detector to weak ultraviolet signals is improved.

Description

technical field

[0001] The invention relates to an ultraviolet photodetector and a preparation method thereof, in particular to a PIN structure ultraviolet photodetector and a preparation method thereof, and belongs to the field of semiconductor optoelectronic devices. Background technique

[0002] Ultraviolet photodetectors have important application value and development prospects in both military and civilian applications, such as: ultraviolet warning and guidance, detection of hydrocarbon combustion flames, detection of biochemical genes, research in ultraviolet astronomy, short-distance communication and skin disease treatment, etc. The PIN structure ultraviolet photodetector has the advantages of small size, light weight, long life, good shock resistance, low working voltage, high temperature resistance, corrosion resistance, radiation resistance, high quantum efficiency and no need for filters. research hotspots.

[0003] GaN-based semiconductor ternary compound Al ...

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