A kind of pin structure ultraviolet photodetector and preparation method thereof
A technology of electrical detectors and ultraviolet light, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of insensitivity of ultraviolet detectors and poor responsivity of weak ultraviolet signals, achieve high lateral carrier mobility, improve Effects of quantum efficiency and high absorption coefficient
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Embodiment 1
[0026] Example 1, such as figure 1 As shown, the PIN structure ultraviolet photodetector involved in this embodiment includes a sapphire substrate 101, an AlN nucleation layer 102, an Al x1 Ga 1-x1 N buffer layer 103, n-type Al x2 Ga 1-x2 N layer 104, non-doped i-type ZnO / TiO 2 Superlattice absorption layer 105, p-type Al x3 Ga 1-x3 N layer 106, p-type GaN layer 107, in n-type Al x2 Ga 1-x2 The n-type ohmic electrode 109 drawn out from the N layer 104 and the p-type ohmic electrode 108 drawn out on the p-type GaN layer 107 . The thickness of the AlN nucleation layer 102 is 25nm, and the specific thickness of the nucleation layer can be adjusted according to actual needs. Al x1 Ga 1-x1 The thickness of the N buffer layer 103 is 400 nm, and x1=0.30 therein. n-type Al x2 Ga 1-x2 The thickness of the N layer 104 is 700nm, and wherein x2=0.45, and is doped with Si, wherein the doping concentration of Si is greater than 5×10 18 cm -3 . Non-doped i-type ZnO / TiO 2 Sup...
Embodiment 2
[0038] Example 2, such as figure 1 As shown, the PIN structure ultraviolet photodetector involved in this embodiment includes a sapphire substrate 101, an AlN nucleation layer 102, an Al x1 Ga 1-x1 N buffer layer 103, n-type Al x2 Ga 1-x2 N layer 104, non-doped i-type ZnO / TiO 2 Superlattice absorption layer 105, p-type Al x3 Ga 1-x3 N layer 106, p-type GaN layer 107, in n-type Al x2 Ga 1-x2 The n-type ohmic electrode 109 drawn out from the N layer 104 and the p-type ohmic electrode 108 drawn out on the p-type GaN layer 107 . Wherein the thickness of the AlN nucleation layer 102 is 20 nm. al x1 Ga 1-x1 The thickness of the N buffer layer 103 is 300 nm, and x1=0.45 therein. n-type Al x2 Ga 1-x2 The thickness of the N layer 104 is 500nm, and wherein x2=0.55, and is doped with Si, wherein the doping concentration of Si is greater than 5×10 18 cm -3 . Non-doped i-type ZnO / TiO 2 Superlattice absorbing layer 105, ZnO layer thickness is 10nm in a single period, TiO 2...
Embodiment 3
[0040] Example 3, such as figure 1 As shown, the PIN structure ultraviolet photodetector involved in this embodiment includes a sapphire substrate 101, an AlN nucleation layer 102, an Al x1 Ga 1-x1 N buffer layer 103, n-type Al x2 Ga 1-x2 N layer 104, non-doped i-type ZnO / TiO 2 Superlattice absorption layer 105, p-type Al x3 Ga 1-x3 N layer 106, p-type GaN layer 107, in n-type Al x2 Ga 1-x2 The n-type ohmic electrode 109 drawn out from the N layer 104 and the p-type ohmic electrode 108 drawn out on the p-type GaN layer 107 . Wherein the thickness of the AlN nucleation layer 102 is 60nm. al x1 Ga 1-x1 The thickness of the N buffer layer 103 is 800 nm, and x1=0.4 therein. n-type Al x2 Ga 1-x2 The thickness of the N layer 104 is 1000 nm, and wherein x2=0.6, and is doped with Si, wherein the doping concentration of Si is greater than 5×10 18 cm -3 . Non-doped i-type ZnO / TiO 2 Superlattice absorbing layer 105, ZnO layer thickness is 10nm in a single period, TiO 2 ...
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