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Modified BiFeO3 thin film photoelectrode adopting cobaltous phosphate promoter and preparation method thereof

A cocatalyst and cobalt phosphate technology, which is applied in the field of cobalt phosphate modified BiFeO3 thin film photoelectrode and its preparation, can solve the problems of poor photogenerated carrier mobility and high carrier recombination rate, and achieve a simple and easy preparation method, The effect of promoting application and facilitating the regulation of photoelectrochemical properties

Active Publication Date: 2017-07-21
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention can effectively reduce the reaction overpotential of the BFO thin film photoelectrode by loading the cobalt phosphate cocatalyst, improve the surface reactivity, and solve the problem of poor photogenerated carrier mobility and current-carrying in the current BFO thin film photoelectrode to a certain extent. High sub-recombination rate and other issues, thus greatly improving the photoelectrochemical performance of BFO thin film photoelectrodes

Method used

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  • Modified BiFeO3 thin film photoelectrode adopting cobaltous phosphate promoter and preparation method thereof
  • Modified BiFeO3 thin film photoelectrode adopting cobaltous phosphate promoter and preparation method thereof
  • Modified BiFeO3 thin film photoelectrode adopting cobaltous phosphate promoter and preparation method thereof

Examples

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Comparison scheme
Effect test

Embodiment 1

[0018] Weigh 6mmol of bismuth nitrate pentahydrate and dissolve it in 20ml of ethylene glycol, add 10ml of glacial acetic acid for dehydration after ultrasonication for 10 minutes and continue ultrasonication for 10 minutes, then add 6mmol of ferric nitrate nonahydrate, ultrasonic for 10 minutes, and finally add 1.0 g of P123 is used as a template agent, after 30 minutes of ultrasonication, it is aged at room temperature for 24 hours to obtain the precursor sol for the next step of preparing BFO thin film photoelectrodes; Spin coating on the cleaned FTO conductive glass surface, the spin coating time is 40s, and then dry on a hot table at 150 degrees, and then put the dried samples into a muffle furnace for calcination at 550 degrees, and the calcination time is 30 minutes. After naturally cooling to room temperature, the BFO film can be prepared; the BFO film prepared above is immersed in the potassium dihydrogen phosphate electrolyte solution (concentration is 0.1M) containin...

Embodiment 2

[0021] Weigh 5mmol of bismuth nitrate pentahydrate and dissolve it in 15ml of ethylene glycol, add 10ml of glacial acetic acid for dehydration after ultrasonication for 10 minutes and continue ultrasonication for 10 minutes, then add 5mmol of ferric nitrate nonahydrate, ultrasonic for 10 minutes, and finally add 0.8 g of P123 is used as a template agent, after 30 minutes of ultrasonication, it is aged at room temperature for 24 hours to obtain the precursor sol for the next step of preparing BFO thin film photoelectrodes; Spin coating on the cleaned FTO conductive glass surface, the spin coating time is 40s, and then dry on a hot table at 150 degrees, and then put the dried samples into a muffle furnace for calcination at 550 degrees, and the calcination time is 30 minutes. After naturally cooling to room temperature, the BFO film can be prepared; the BFO film prepared above is immersed in the potassium dihydrogen phosphate electrolyte solution (concentration is 0.1M) containin...

Embodiment 3

[0023]Weigh 10mmol of bismuth nitrate pentahydrate and dissolve it in 30ml of ethylene glycol, add 10ml of glacial acetic acid for dehydration after ultrasonication for 10 minutes and continue ultrasonication for 10 minutes, then add 10mmol of ferric nitrate nonahydrate, ultrasonic for 10 minutes, and finally add 1.5 g of P123 is used as a template agent, after 30 minutes of ultrasonication, it is aged at room temperature for 24 hours to obtain the precursor sol for the next step of preparing BFO thin film photoelectrodes; Spin coating on the cleaned FTO conductive glass surface, the spin coating time is 40s, and then dry on a hot table at 150 degrees, and then put the dried samples into a muffle furnace for calcination at 550 degrees, and the calcination time is 30 minutes. After naturally cooling to room temperature, the BFO film can be prepared; the BFO film prepared above is immersed in the potassium dihydrogen phosphate electrolyte solution (concentration is 0.1M) containi...

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Abstract

The invention belongs to the field of semi-conductor thin films and particularly relates to a modified BiFeO3 (BFO) thin film photoelectrode adopting a cobaltous phosphate promoter and a preparation method thereof. The invention provides the modified BFO thin film photoelectrode adopting cobaltous phosphate (Co-Pi) and the preparation method thereof, the modified BFO thin film photoelectrode adopting the cobaltous phosphate (Co-Pi) and the preparation method thereof are characterized in that through the photo-assisted electrochemical deposition method, a Co-Pi promoter is deposited and loaded on the surface of a BFO thin film prepared through the sol-gel method. After the BFO thin film photoelectrode is modified through the cobaltous phosphate promoter, the reaction overpotential of the BFO thin film photoelectrode can be effectively reduced, surface reactivity is improved, and the problems that an existing BFO thin film photoelectrode is low in photo-generated carrier migration rate and high in carrier recombination rate are solved to some extent, so that the photoelectrochemical property of the BFO thin film photoelectrode is greatly improved, and application of the BFO thin film photoelectrode in the photoelectrochemical field is promoted.

Description

technical field [0001] The invention belongs to the field of semiconductor thin films, in particular to a cobalt phosphate modified BiFeO 3 Thin-film photoelectrode and its preparation method. Background technique [0002] In recent years, BiFeO 3 (BFO for short) has been proven to be a new type of visible light-responsive photocatalyst because of its large spontaneous polarization characteristics, suitable band gap (2.1-2.7eV), good chemical stability and low cost. Photocatalytic degradation of organic pollutants under visible light irradiation, and the use of BFO thin film photoelectrodes to achieve photocatalytic water splitting to produce oxygen, therefore, BFO thin film photoelectrodes have received extensive attention in the fields of photocatalysis, photovoltaic devices and other fields. Although BFO films have the above advantages, however, the photocatalytic activity of BFO films is average and the photoelectric conversion efficiency is not high, mainly due to the...

Claims

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Application Information

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IPC IPC(8): C23C28/04C23C18/12C23C18/14C25D9/04
CPCC01P2002/85C01P2004/03C23C18/1204C23C18/1254C23C18/14C23C28/048C25D9/04
Inventor 陈达王森黄岳祥秦来顺
Owner CHINA JILIANG UNIV
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